DE4411859A1 - Schalttransistoranordnung - Google Patents
SchalttransistoranordnungInfo
- Publication number
- DE4411859A1 DE4411859A1 DE19944411859 DE4411859A DE4411859A1 DE 4411859 A1 DE4411859 A1 DE 4411859A1 DE 19944411859 DE19944411859 DE 19944411859 DE 4411859 A DE4411859 A DE 4411859A DE 4411859 A1 DE4411859 A1 DE 4411859A1
- Authority
- DE
- Germany
- Prior art keywords
- transistor
- semiconductor
- region
- switching
- arrangement according
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000004065 semiconductor Substances 0.000 claims abstract description 24
- 239000000758 substrate Substances 0.000 claims abstract description 11
- 230000000903 blocking effect Effects 0.000 claims 1
- 238000000034 method Methods 0.000 abstract description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004870 electrical engineering Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
- H01L27/0823—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
- H01L27/0826—Combination of vertical complementary transistors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
- Electronic Switches (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR9304170A FR2703830B1 (fr) | 1993-04-08 | 1993-04-08 | Ensemble à transistor de commutation. |
Publications (1)
Publication Number | Publication Date |
---|---|
DE4411859A1 true DE4411859A1 (de) | 1994-10-13 |
Family
ID=9445885
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE19944411859 Withdrawn DE4411859A1 (de) | 1993-04-08 | 1994-04-06 | Schalttransistoranordnung |
Country Status (5)
Country | Link |
---|---|
JP (1) | JPH07130761A (zh) |
CN (1) | CN1035090C (zh) |
DE (1) | DE4411859A1 (zh) |
FR (1) | FR2703830B1 (zh) |
GB (1) | GB2276981B (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6119660A (en) * | 1998-04-27 | 2000-09-19 | Toyota Jidosha Kabushiki Kaisha | Compression-ignition internal combustion engine having combustion heater |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NZ501675A (en) * | 1999-12-09 | 2002-12-20 | New Zealand Dairy Board | Translucent milk drink having a pH of 5.7 to 7.0 and a percentage transmission of at least 5% prepared by a cation exchange process |
CN101931010A (zh) * | 2010-06-24 | 2010-12-29 | 深圳市鹏微科技有限公司 | 二极管及其制造方法 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2527008A1 (fr) * | 1982-05-14 | 1983-11-18 | Thomson Csf | Structure semiconductrice de type mesa associant une diode et un transistor de types transverses en antiparallele |
DE3331631A1 (de) * | 1982-09-01 | 1984-03-01 | Mitsubishi Denki K.K., Tokyo | Halbleiter-bauelement |
DE3247006A1 (de) * | 1982-12-18 | 1984-06-20 | Telefunken electronic GmbH, 6000 Frankfurt | Integrierte transistoranordnung |
JPH03138946A (ja) * | 1989-10-24 | 1991-06-13 | Sony Corp | 半導体装置 |
EP0491217A1 (de) * | 1990-12-19 | 1992-06-24 | Siemens Aktiengesellschaft | Integrierte Transistor-Freilaufdioden-Anordnung |
-
1993
- 1993-04-08 FR FR9304170A patent/FR2703830B1/fr not_active Expired - Fee Related
-
1994
- 1994-03-23 GB GB9405770A patent/GB2276981B/en not_active Expired - Fee Related
- 1994-04-06 JP JP9070194A patent/JPH07130761A/ja active Pending
- 1994-04-06 DE DE19944411859 patent/DE4411859A1/de not_active Withdrawn
- 1994-04-07 CN CN94104613A patent/CN1035090C/zh not_active Expired - Fee Related
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6119660A (en) * | 1998-04-27 | 2000-09-19 | Toyota Jidosha Kabushiki Kaisha | Compression-ignition internal combustion engine having combustion heater |
Also Published As
Publication number | Publication date |
---|---|
FR2703830A1 (fr) | 1994-10-14 |
FR2703830B1 (fr) | 1997-07-04 |
GB9405770D0 (en) | 1994-05-11 |
GB2276981B (en) | 1997-04-02 |
CN1035090C (zh) | 1997-06-04 |
CN1095863A (zh) | 1994-11-30 |
GB2276981A (en) | 1994-10-12 |
JPH07130761A (ja) | 1995-05-19 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8110 | Request for examination paragraph 44 | ||
8127 | New person/name/address of the applicant |
Owner name: SEMICONDUCTOR COMPONENTS INDUSTRIES L.L.C. (N.D.GE |
|
8139 | Disposal/non-payment of the annual fee |