DE4411859A1 - Schalttransistoranordnung - Google Patents

Schalttransistoranordnung

Info

Publication number
DE4411859A1
DE4411859A1 DE19944411859 DE4411859A DE4411859A1 DE 4411859 A1 DE4411859 A1 DE 4411859A1 DE 19944411859 DE19944411859 DE 19944411859 DE 4411859 A DE4411859 A DE 4411859A DE 4411859 A1 DE4411859 A1 DE 4411859A1
Authority
DE
Germany
Prior art keywords
transistor
semiconductor
region
switching
arrangement according
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE19944411859
Other languages
German (de)
English (en)
Inventor
Philippe Lance
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Components Industries LLC
Original Assignee
Motorola Semiconducteurs SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Semiconducteurs SA filed Critical Motorola Semiconducteurs SA
Publication of DE4411859A1 publication Critical patent/DE4411859A1/de
Withdrawn legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H01L27/0823Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
    • H01L27/0826Combination of vertical complementary transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Electronic Switches (AREA)
DE19944411859 1993-04-08 1994-04-06 Schalttransistoranordnung Withdrawn DE4411859A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9304170A FR2703830B1 (fr) 1993-04-08 1993-04-08 Ensemble à transistor de commutation.

Publications (1)

Publication Number Publication Date
DE4411859A1 true DE4411859A1 (de) 1994-10-13

Family

ID=9445885

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19944411859 Withdrawn DE4411859A1 (de) 1993-04-08 1994-04-06 Schalttransistoranordnung

Country Status (5)

Country Link
JP (1) JPH07130761A (zh)
CN (1) CN1035090C (zh)
DE (1) DE4411859A1 (zh)
FR (1) FR2703830B1 (zh)
GB (1) GB2276981B (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6119660A (en) * 1998-04-27 2000-09-19 Toyota Jidosha Kabushiki Kaisha Compression-ignition internal combustion engine having combustion heater

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NZ501675A (en) * 1999-12-09 2002-12-20 New Zealand Dairy Board Translucent milk drink having a pH of 5.7 to 7.0 and a percentage transmission of at least 5% prepared by a cation exchange process
CN101931010A (zh) * 2010-06-24 2010-12-29 深圳市鹏微科技有限公司 二极管及其制造方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2527008A1 (fr) * 1982-05-14 1983-11-18 Thomson Csf Structure semiconductrice de type mesa associant une diode et un transistor de types transverses en antiparallele
DE3331631A1 (de) * 1982-09-01 1984-03-01 Mitsubishi Denki K.K., Tokyo Halbleiter-bauelement
DE3247006A1 (de) * 1982-12-18 1984-06-20 Telefunken electronic GmbH, 6000 Frankfurt Integrierte transistoranordnung
JPH03138946A (ja) * 1989-10-24 1991-06-13 Sony Corp 半導体装置
EP0491217A1 (de) * 1990-12-19 1992-06-24 Siemens Aktiengesellschaft Integrierte Transistor-Freilaufdioden-Anordnung

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6119660A (en) * 1998-04-27 2000-09-19 Toyota Jidosha Kabushiki Kaisha Compression-ignition internal combustion engine having combustion heater

Also Published As

Publication number Publication date
FR2703830A1 (fr) 1994-10-14
FR2703830B1 (fr) 1997-07-04
GB9405770D0 (en) 1994-05-11
GB2276981B (en) 1997-04-02
CN1035090C (zh) 1997-06-04
CN1095863A (zh) 1994-11-30
GB2276981A (en) 1994-10-12
JPH07130761A (ja) 1995-05-19

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Legal Events

Date Code Title Description
8110 Request for examination paragraph 44
8127 New person/name/address of the applicant

Owner name: SEMICONDUCTOR COMPONENTS INDUSTRIES L.L.C. (N.D.GE

8139 Disposal/non-payment of the annual fee