GB9405770D0 - Switching transistor arrangement - Google Patents

Switching transistor arrangement

Info

Publication number
GB9405770D0
GB9405770D0 GB9405770A GB9405770A GB9405770D0 GB 9405770 D0 GB9405770 D0 GB 9405770D0 GB 9405770 A GB9405770 A GB 9405770A GB 9405770 A GB9405770 A GB 9405770A GB 9405770 D0 GB9405770 D0 GB 9405770D0
Authority
GB
United Kingdom
Prior art keywords
switching transistor
transistor arrangement
arrangement
switching
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
GB9405770A
Other versions
GB2276981A (en
GB2276981B (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Freescale Semiconducteurs France SAS
Original Assignee
Motorola Semiconducteurs SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Semiconducteurs SA filed Critical Motorola Semiconducteurs SA
Publication of GB9405770D0 publication Critical patent/GB9405770D0/en
Publication of GB2276981A publication Critical patent/GB2276981A/en
Application granted granted Critical
Publication of GB2276981B publication Critical patent/GB2276981B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H01L27/0823—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
    • H01L27/0826—Combination of vertical complementary transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Electronic Switches (AREA)
GB9405770A 1993-04-08 1994-03-23 Switching transistor arrangement Expired - Fee Related GB2276981B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9304170A FR2703830B1 (en) 1993-04-08 1993-04-08 Switching transistor assembly.

Publications (3)

Publication Number Publication Date
GB9405770D0 true GB9405770D0 (en) 1994-05-11
GB2276981A GB2276981A (en) 1994-10-12
GB2276981B GB2276981B (en) 1997-04-02

Family

ID=9445885

Family Applications (1)

Application Number Title Priority Date Filing Date
GB9405770A Expired - Fee Related GB2276981B (en) 1993-04-08 1994-03-23 Switching transistor arrangement

Country Status (5)

Country Link
JP (1) JPH07130761A (en)
CN (1) CN1035090C (en)
DE (1) DE4411859A1 (en)
FR (1) FR2703830B1 (en)
GB (1) GB2276981B (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3577946B2 (en) * 1998-04-27 2004-10-20 トヨタ自動車株式会社 Compression ignition type internal combustion engine having a combustion type heater
NZ501675A (en) * 1999-12-09 2002-12-20 New Zealand Dairy Board Translucent milk drink having a pH of 5.7 to 7.0 and a percentage transmission of at least 5% prepared by a cation exchange process
CN101931010A (en) * 2010-06-24 2010-12-29 深圳市鹏微科技有限公司 Diode and manufacturing method thereof

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2527008A1 (en) * 1982-05-14 1983-11-18 Thomson Csf SEMICONDUCTOR STRUCTURE OF MESA TYPE COMBINING A DIODE AND A TRANSISTOR OF TYPES TRANSVERSE INTO ANTIPARALLEL
DE3331631A1 (en) * 1982-09-01 1984-03-01 Mitsubishi Denki K.K., Tokyo Semiconductor component
DE3247006A1 (en) * 1982-12-18 1984-06-20 Telefunken electronic GmbH, 6000 Frankfurt Integrated transistor device
JPH03138946A (en) * 1989-10-24 1991-06-13 Sony Corp Semiconductor device
EP0491217A1 (en) * 1990-12-19 1992-06-24 Siemens Aktiengesellschaft Integrated transistor-flyback diodes device

Also Published As

Publication number Publication date
GB2276981A (en) 1994-10-12
GB2276981B (en) 1997-04-02
DE4411859A1 (en) 1994-10-13
CN1035090C (en) 1997-06-04
JPH07130761A (en) 1995-05-19
FR2703830B1 (en) 1997-07-04
CN1095863A (en) 1994-11-30
FR2703830A1 (en) 1994-10-14

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Legal Events

Date Code Title Description
746 Register noted 'licences of right' (sect. 46/1977)

Effective date: 19991111

PCNP Patent ceased through non-payment of renewal fee

Effective date: 20020323