CN1095863A - Switching transistor arrangement - Google Patents
Switching transistor arrangement Download PDFInfo
- Publication number
- CN1095863A CN1095863A CN 94104613 CN94104613A CN1095863A CN 1095863 A CN1095863 A CN 1095863A CN 94104613 CN94104613 CN 94104613 CN 94104613 A CN94104613 A CN 94104613A CN 1095863 A CN1095863 A CN 1095863A
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- China
- Prior art keywords
- semiconductor regions
- transistor
- switching transistor
- substrate
- district
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims abstract description 22
- 239000000758 substrate Substances 0.000 claims abstract description 14
- 238000012545 processing Methods 0.000 abstract description 2
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 239000013078 crystal Substances 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 230000000266 injurious effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000007634 remodeling Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
- H01L27/0823—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
- H01L27/0826—Combination of vertical complementary transistors
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
- Electronic Switches (AREA)
Abstract
A kind of integrated circuit switch transistor circuit device 200.It has Semiconductor substrate 202, and this substrate has mutual finger-like combination and forms one and second semiconductor regions 206 and 208 of crystal 2 14 control electrodes and signal electrode respectively; Form the 3rd semiconductor regions 204 of transistor secondary signal electrode; With one extend along first and second districts and with the 4th semiconductor regions 207 of a diode junction 216 that on the sizable area of substrate, extends of the 3rd district formation.Thereby under the condition that does not increase processing step, the monolithic integrated circuit that can have good, stable switching characteristic with the manufacturing of standard bipolar transistor technology.
Description
The present invention relates to switching transistor arrangement.
Switching transistor is widely used for high-power switchgear in person in electronics.In a kind of known switching transistor arrangement, the base stage one emitter junction reverse parallel connection of a diode and a power transistor.The effect of this diode provides from the next reverse current path of emitter and collector.A kind of like this design is provided, and for example, be necessary when power transistor is used for that switch flows through the electric current of inductance: because can not stop transistorized switch motion immediately by the electric current of inductance, this diode provides a path for this electric current.The half-bridge self-excited circuit that generally adopts in the electronic ballast circuit that an example of this switching transistor arrangement is exactly a fluorescent lamp.
Its cost of the switching transistor arrangement of this purposes is very crucial.Thereby, wish diode and switching transistor be integrated in the same integrated circuit and go, so that reduce cost.But effort in the prior art that this diode and switching transistor is integrated causes the transistor switch characteristic that unpredictable and unsettled variation has taken place.
Therefore, the purpose of this invention is to provide a kind of switching transistor arrangement with good and stable switching characteristic.
Switching transistor arrangement of the present invention comprises the semiconductor substrate, and this substrate has:
Finger-like makes up, also forms respectively first and second semiconductor regions of transistorized control electrode and signal electrode mutually;
Form the 3rd semiconductor regions of transistorized secondary signal electrode; And
Extend and form the 4th semiconductor regions of a diode junction with the 3rd semiconductor regions along first and second semiconductor regions, diode junction extends on the sizable area of substrate.
Have been found that by providing the 4th semiconductor regions that extends along first and second semiconductor regions on sizable area of substrate, to form diode junction, obtained good, foreseeable and stable switching characteristic.
Below with reference to accompanying drawings, switching transistor arrangement of the present invention is only described by way of example, wherein;
Fig. 1 .1,1.2 and 1.3 are respectively plane graph, sectional view and the circuit diagram of a known integrated circuit switch transistor unit;
Fig. 2 .1,2.2 and 2.3 is respectively plane graph, sectional view and the circuit diagram of an integrated circuit switch transistor unit of the present invention.
Now a N is arranged referring to Fig. 1 .1,1.2 and 1.3, one known switching transistor circuit devices 100
+ Silicon substrate 102 and the N on it
-Layer 104.On layer 104 is P
+District 106.In district 106, form N with finger 108A, 108B and 108C
+District 108.Interdigitated metal layer 110 and 112 is respectively formed in the district 106 and 108.
Therefore, can think that district 106 and 108 constitutes the base and the emitter region of mutual interdigitated combination respectively, and layer 104 constitutes collector region.Integrated circuit shown in Fig. 1 .1 and 1.2 constitutes npn bipolar transistor shown in Fig. 1 .3, that have the interdigitated base/emitter, and it can provide good high-power switchgear characteristic.
Yet, as previously mentioned, a diode is integrated into concentration in this known power transistor (as form diode etc. under the emitter pressure welding area, need additional processing step), make transistorized switching characteristic that unpredictable unstable variation the, the device that needs the rear portion test and select performance to meet the requirements from a collection of product take place.
Referring now to Fig. 2 .1,2.2 and 2.3,, (not shown) provides a switching transistor circuit device 200 in an integrated circuit (IC) apparatus.Switching transistor circuit device 200 has a N
+Silicon substrate 202 and the N on it
-Layer 204.In the layer 204 is the P with finger piece 206A, 206B
+District 206.In layer 204, also be formed with another P that the interdigitated combination is extended between finger piece 206A, 206B
+District 207.Be formed with a N with finger piece 208A, 208B in 206 in the district
+District 208.The metallized area 210 and 212 of interdigitated combination is respectively formed in the district 206 and 208, and extends through district 207.
Like this, can think that district 206 and 208 constitutes the base and the emitter region of mutual interdigitated combination respectively, constitutes collector region and distinguish 204.Integrated circuit shown in Fig. 2 .1 and 2.2 constitutes shown in Fig. 2 .3, as to have the base/emitter of an interdigitated combination npn bipolar transistor 214, and good high-power switchgear characteristic can be provided.
District 207 and N
-Layer 204 constitutes a diode 216 with this transistorized base stage one emitter junction reverse parallel connection.Because this is formed on P
+District 207 and N
-The knot of the diode 214 of layer between 204 on sizable area of substrate (in fact, almost with area that the gross area of base stage one emitter junction of switching transistor equates on) extend, this switching transistor shows the existence that does not have because of this diode and is subjected to injurious effects, thereby can obtain foresighted and stable switching characteristic.
Therefore, Fig. 2 .1,2.2 and 2.3 switching transistor arrangement allow the function of reverse parallel connection diode to be integrated with power switch transistor satisfactorily as can be known.
Also can think P
+District 206, P
+District 207 and N
-District 204 constitutes a PNP bipolar transistor 218.By at P
+District 206 and P
+Between the district 207 N is set suitably
+Gap (determining the base width of PNP transistor 218 thus), can do this PNP transistor 218 to such an extent that the ground (even under high switching rate) that is entirely satisfactory plays the effect of " Baker " clamp circuit (Baker clamp), thereby prevent the supersaturation of NPN transistor 214.
Be appreciated that Fig. 2 .1,2.2 and 2.3 switching transistor arrangement make the electric charge on the base junction that is stored in transistor 214 to remove from this transistorized base, rather than resemble and remove from emitter simply the device of prior art of Fig. 1.Therefore, the switching transistor arrangement shown in Fig. 2 .1,2.2 and 2.3 can be used for the scope (even very large life-span) of any carrier lifetime.Simultaneously, die-size is compared with one type of prior art syringe, can reduce 30% more than, thereby output can be provided and reduce cost.
Although be appreciated that in Fig. 2 .1 and 2.2 not illustrate, if desired, can be directly from N
+The collector electrode of substrate 202 ejectors connects.And can be at N
-Layer 204 forms N round other zone 206 and 207
+The shading ring of material.
The bipolar transistor technology of Fig. 2 .1,2.2 and 2.3 switching transistor arrangement available standards is made, and comparing with one type of prior art syringe shown in Figure 1 does not need to increase additional process.
Should be understood that to those skilled in the art in the scope that does not exceed the present invention's design, can various remodeling and distortion be arranged obviously to above-described embodiment.
Claims (7)
1, a kind of switching transistor circuit device, it comprises semi-conductive substrate, this substrate has:
Interdigitated makes up, also forms respectively first and second semiconductor regions of transistorized control electrode and signal electrode mutually;
Form the 3rd semiconductor regions of transistorized secondary signal electrode; And
Extend and form the 4th semiconductor regions of a diode junction that on the sizable area of substrate, extends along first and second semiconductor regions with the 3rd semiconductor regions.
2, circuit arrangement as claimed in claim 1, the 4th semiconductor regions wherein and the combination of the first and second semiconductor regions interdigitated.
3, as the circuit arrangement of claim 1 or 2, the 4th semiconductor regions wherein is set to the 3rd semiconductor regions and first semiconductor regions and forms a clamping transistor.
4, as the circuit arrangement of claim 1 or 2, wherein this switching transistor is a NPN transistor.
5, circuit arrangement as claimed in claim 3, wherein, this switching transistor is a NPN transistor.
6, circuit arrangement as claimed in claim 5, wherein, clamping transistor is a PNP transistor.
7, a kind of integrated circuit (IC) apparatus that comprises each switching transistor circuit device among the claim 1-6.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR9304170 | 1993-04-08 | ||
| FR9304170A FR2703830B1 (en) | 1993-04-08 | 1993-04-08 | Switching transistor assembly. |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1095863A true CN1095863A (en) | 1994-11-30 |
| CN1035090C CN1035090C (en) | 1997-06-04 |
Family
ID=9445885
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN94104613A Expired - Fee Related CN1035090C (en) | 1993-04-08 | 1994-04-07 | Switching transistor arrangement |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JPH07130761A (en) |
| CN (1) | CN1035090C (en) |
| DE (1) | DE4411859A1 (en) |
| FR (1) | FR2703830B1 (en) |
| GB (1) | GB2276981B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101931010A (en) * | 2010-06-24 | 2010-12-29 | 深圳市鹏微科技有限公司 | Diode and manufacturing method thereof |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3577946B2 (en) * | 1998-04-27 | 2004-10-20 | トヨタ自動車株式会社 | Compression ignition type internal combustion engine having a combustion type heater |
| NZ501675A (en) * | 1999-12-09 | 2002-12-20 | New Zealand Dairy Board | Translucent milk drink having a pH of 5.7 to 7.0 and a percentage transmission of at least 5% prepared by a cation exchange process |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2527008A1 (en) * | 1982-05-14 | 1983-11-18 | Thomson Csf | SEMICONDUCTOR STRUCTURE OF MESA TYPE COMBINING A DIODE AND A TRANSISTOR OF TYPES TRANSVERSE INTO ANTIPARALLEL |
| DE3331631A1 (en) * | 1982-09-01 | 1984-03-01 | Mitsubishi Denki K.K., Tokyo | Semiconductor component |
| DE3247006A1 (en) * | 1982-12-18 | 1984-06-20 | Telefunken electronic GmbH, 6000 Frankfurt | Integrated transistor device |
| JPH03138946A (en) * | 1989-10-24 | 1991-06-13 | Sony Corp | Semiconductor device |
| EP0491217A1 (en) * | 1990-12-19 | 1992-06-24 | Siemens Aktiengesellschaft | Integrated transistor-flyback diodes device |
-
1993
- 1993-04-08 FR FR9304170A patent/FR2703830B1/en not_active Expired - Fee Related
-
1994
- 1994-03-23 GB GB9405770A patent/GB2276981B/en not_active Expired - Fee Related
- 1994-04-06 DE DE19944411859 patent/DE4411859A1/en not_active Withdrawn
- 1994-04-06 JP JP9070194A patent/JPH07130761A/en active Pending
- 1994-04-07 CN CN94104613A patent/CN1035090C/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101931010A (en) * | 2010-06-24 | 2010-12-29 | 深圳市鹏微科技有限公司 | Diode and manufacturing method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1035090C (en) | 1997-06-04 |
| GB9405770D0 (en) | 1994-05-11 |
| DE4411859A1 (en) | 1994-10-13 |
| GB2276981B (en) | 1997-04-02 |
| FR2703830A1 (en) | 1994-10-14 |
| GB2276981A (en) | 1994-10-12 |
| JPH07130761A (en) | 1995-05-19 |
| FR2703830B1 (en) | 1997-07-04 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C53 | Correction of patent for invention or patent application | ||
| COR | Change of bibliographic data |
Free format text: CORRECT: PATENTEE; FROM: MOTOROLA SEMICONDUCTOR INC. TO: SEMICONDUCTOR COMPONENT INDUSTRY CO., LTD |
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| CP03 | Change of name, title or address |
Address after: Arizona USA Patentee after: Semiconductor Components Industry, LLC Address before: De la France Patentee before: Motorola Semiconducteurs S. A. |
|
| C19 | Lapse of patent right due to non-payment of the annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |