CH679962A5 - - Google Patents
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- Publication number
- CH679962A5 CH679962A5 CH294589A CH294589A CH679962A5 CH 679962 A5 CH679962 A5 CH 679962A5 CH 294589 A CH294589 A CH 294589A CH 294589 A CH294589 A CH 294589A CH 679962 A5 CH679962 A5 CH 679962A5
- Authority
- CH
- Switzerland
- Prior art keywords
- region
- layer
- emitter
- base
- base layer
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 claims description 20
- 239000000758 substrate Substances 0.000 claims description 18
- 238000000034 method Methods 0.000 claims description 17
- 238000004519 manufacturing process Methods 0.000 claims description 7
- 229920002120 photoresistant polymer Polymers 0.000 claims description 2
- 238000009792 diffusion process Methods 0.000 description 7
- 230000000903 blocking effect Effects 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000010079 rubber tapping Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/747—Bidirectional devices, e.g. triacs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/744—Gate-turn-off devices
- H01L29/745—Gate-turn-off devices with turn-off by field effect
- H01L29/7455—Gate-turn-off devices with turn-off by field effect produced by an insulated gate structure
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thyristors (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CH294589A CH679962A5 (zh) | 1989-08-10 | 1989-08-10 | |
| DE19904024526 DE4024526A1 (de) | 1989-08-10 | 1990-08-02 | Abschaltbares, mos-gesteuertes leistungshalbleiter-bauelement sowie verfahren zu dessen herstellung |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CH294589A CH679962A5 (zh) | 1989-08-10 | 1989-08-10 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CH679962A5 true CH679962A5 (zh) | 1992-05-15 |
Family
ID=4245170
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CH294589A CH679962A5 (zh) | 1989-08-10 | 1989-08-10 |
Country Status (2)
| Country | Link |
|---|---|
| CH (1) | CH679962A5 (zh) |
| DE (1) | DE4024526A1 (zh) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5099300A (en) * | 1990-06-14 | 1992-03-24 | North Carolina State University | Gated base controlled thyristor |
| JPH0795597B2 (ja) * | 1990-08-18 | 1995-10-11 | 三菱電機株式会社 | サイリスタおよびその製造方法 |
| JPH04284669A (ja) * | 1991-03-14 | 1992-10-09 | Fuji Electric Co Ltd | 絶縁ゲート制御サイリスタ |
| EP0507974B1 (de) * | 1991-04-11 | 1995-12-20 | Asea Brown Boveri Ag | Abschaltbares, MOS-gesteuertes Leistungshalbleiter-Bauelement |
| DE4135411A1 (de) * | 1991-10-26 | 1993-04-29 | Asea Brown Boveri | Abschaltbares leistungshalbleiter-bauelement |
| DE4135412A1 (de) * | 1991-10-26 | 1993-04-29 | Asea Brown Boveri | Mos-gesteuerter thyristor mct |
| GB2263579A (en) * | 1992-01-24 | 1993-07-28 | Texas Instruments Ltd | An integrated circuit with intermingled electrodes |
| DE4427988A1 (de) * | 1994-08-08 | 1996-02-15 | Abb Management Ag | MOS gesteuertes Leistungshalbleiterbauelement für hohe Spannungen |
| DE19538090A1 (de) * | 1995-10-13 | 1997-04-17 | Asea Brown Boveri | Leistungshalbleiterelement |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3542570A1 (de) * | 1985-12-02 | 1987-06-04 | Siemens Ag | Gate-turnoff-thyristor mit integrierter antiparalleler diode |
| EP0225962A2 (en) * | 1985-12-13 | 1987-06-24 | SILICONIX Incorporated | Insulated gate transistor with latching inhibited |
-
1989
- 1989-08-10 CH CH294589A patent/CH679962A5/de not_active IP Right Cessation
-
1990
- 1990-08-02 DE DE19904024526 patent/DE4024526A1/de not_active Withdrawn
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3542570A1 (de) * | 1985-12-02 | 1987-06-04 | Siemens Ag | Gate-turnoff-thyristor mit integrierter antiparalleler diode |
| EP0225962A2 (en) * | 1985-12-13 | 1987-06-24 | SILICONIX Incorporated | Insulated gate transistor with latching inhibited |
Also Published As
| Publication number | Publication date |
|---|---|
| DE4024526A1 (de) | 1991-02-14 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PL | Patent ceased |