CN1035090C - 开关晶体管电路装置 - Google Patents
开关晶体管电路装置 Download PDFInfo
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- CN1035090C CN1035090C CN94104613A CN94104613A CN1035090C CN 1035090 C CN1035090 C CN 1035090C CN 94104613 A CN94104613 A CN 94104613A CN 94104613 A CN94104613 A CN 94104613A CN 1035090 C CN1035090 C CN 1035090C
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- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
- H01L27/0823—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
- H01L27/0826—Combination of vertical complementary transistors
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Abstract
一种集成电路开关晶体管电路装置200,它具有半导体衬底202,此衬底带有相互指状组合并分别形成晶体214控制电极和信号电极的第一和第二半导体区域206和208;形成晶体管第二信号电极的第三半导体区域204;和一个沿第一和第二区延伸并与第三区形成一个在衬底相当大的面积上延伸的二极管结216的第四半导体区域207。从而在不增加工艺步骤的条件下,能用标准双极晶体管技术制造具有良好、稳定的开关特性的单片集成电路。
Description
本发明涉及开关晶体管电路装置。
开关晶体管在电子学领域中广泛地用于高功率开关。在一种已知的开关晶体管电路装置中,一个二极管与一功率晶体管的基极一发射极结反向并联。该二极管的作用是提供从发射极和集电极来的反向电流通路。提供这样一种设计,例如,在功率晶体管用于开关流过电感的电流时是必须的:因为通过电感的电流不能立即停止晶体管的开关动作,该二极管为这一电流提供了一条通路。这种开关晶体管电路装置的一个例子就是荧光灯的电子镇流电路中普遍采用的半桥自激电路。
这种用途的开关晶体管电路装置其成本是非常关键的。因而,希望把二极管和开关晶体管集成到同一块集成电路中去,以使降低成本。但是,现有技术中将该二极管与开关晶体管集成的努力导致晶体管开关特性发生了不可预料的和不稳定的变化。
因此,本发明的目的是提供一种具有良好和稳定的开关特性的开关晶体管电路装置。
本发明的开关晶体管电路装置包括一半导体基片,该基片具有:
相互指状组合、并分别形成晶体管的控制电极和信号电极的第一和第二半导体区域;
形成晶体管的第二信号电极的第三半导体区域;以及
沿第一和第二半导体区域延伸并与第三半导体区域形成一个二极管结的第四半导体区域,二极管结在衬底相当大的面积上延伸。
已经发现,通过提供沿第一和第二半导体区域延伸的第四半导体区域来在衬底的相当大的面积上形成二极管结,获得了良好的、可预料的和稳定的开关特性。
下面将参照附图,仅以举例的方式来描述本发明的开关晶体管电路装置,其中;
图1.1,1.2和1.3分别为一个已知的集成电路开关晶体管电路装置的平面图、截面图和电路示意图;
图2.1、2.2和2.3分别为本发明的一个集成电路开关晶体管电路装置的平面图、截面图和电路示意图。
现参见图11、1.2和1.3,一个已知的开关晶体管电路装置100有一个N+硅衬底102和其上的N-层104。在层104上的是P+区106。在区106内形成具有指状结构108A、108B和108C的N+区108。叉指状金属化层110和112分别形成在区106和108上。
因此,可以认为区106和108分别构成相互叉指状组合的基区和发射区,而层104构成集电区。图1.1和1.2所示的集成电路构成如图1.3所示的、具有叉指状基极/发射极的NPN双极晶体管,它可提供良好的高功率开关特性。
然而,如前所述,把一个二极管集成到这种已知的功率晶体管中的尝试(如在发射极压焊区之下形成二极管等,需要附加的工艺步骤),使晶体管的开关特性发生了不可预料的不稳定变化,需要后部测试以及从一批产品中选择性能合乎要求的器件。
现在参见图2.1、2.2和2.3,在一个集成电路装置中(未示出)提供了一个开关晶体管电路装置200。开关晶体管电路装置200有一N+硅衬底202和其上的N-层204。层204中是具有指状物206A、206B的P+区206。在层204中还形成有在指状物206A、206B之间叉指状组合延伸的又一个P+区207。在区206内形成有一具有指状物208A、208B的N+区208。叉指状组合的金属化区210和212分别形成在区206和208上,并延伸穿过区207。
这样,可以认为区206和208分别构成相互叉指状组合的基区和发射区,而区204构成集电区。图2.1和2.2所示的集成电路构成一个如图2.3所示的、具有叉指状组合的基极/发射极的NPN双极晶体管214,可提供良好的高功率开关特性。
区207与N-层204构成一个与该晶体管的基极一发射极结反向并联的二极管216。由于该形成在P+区207和N-层204之间的二极管214的结在衬底的相当大的面积上(事实上,几乎在与开关晶体管的基极—发射极结的总面积相等的面积上)延伸,该开关晶体管表现出没有因该二极管的存在而受到有害的影响,从而可获得能预料的和稳定的开关特性。
因此,可知图2.1、2.2和2.3的开关晶体管电路装置允许反向并联二极管的功能被令人满意地与功率开关晶体管集成在一起。
也可以认为P+区206、P+区207和N-区204构成一个PNP双极晶体管218。通过在P+区206和P+区207之间适当地设置N+间隙(由此确定PNP晶体管218的基区宽度),可以把该PNP晶体管218做得完全令人满意地(即使在高的开关速率下)起到一个“Baker”箝位电路(Bakerclamp的作用,从而防止NPN晶体管214的过饱和。
可以理解,图2.1、2.2和2.3的开关晶体管电路装置使得存储在晶体管214的基极结上的电荷可从该晶体管的基区除去,而不是象图1的现有技术的器件那样简单地从发射极除去。因此,图2.1、2.2和2.3所示的开关晶体管装置可以用于任何载流子寿命的范围(甚至非常大的寿命)。同时,管芯尺寸和现有技术的装置相比,可以减少30%之多,从而可提供产量并降低成本。
可以理解,尽管图2.1和2.2中没有示出,但如果需要,可以直接从N+衬底202引出装置的集电极连接。而且可以在N-层204围绕着其它区域206和207形成N+材料的隔离环。
图2.1、2.2和2.3的开关晶体管电路装置可用标准的双极晶体管工艺来制造,与图1所示的现有技术的装置相比不需要增加附加工序。
应理解,对本领域的普通技术人员来说,很显然在不超出本发明构思的范围内,可以对上面描述的实施例有各种不同的改型和变形。
Claims (4)
1.一种开关晶体管电路装置,它包括一半导体衬底,该衬底具有:
分别形成一开关晶体管的控制电极和信号电极的第一和第二半导体区域;
形成该开关晶体管的第二信号电极的第三半导体区域;以及
沿第一和第二半导体区域延伸并与第三半导体区域形成一个二极管结的第四半导体区域,该二极管结在衬底相当大的面积上延伸,所述开关晶体管电路装置的特征在于,
将第四半导体区域设置成与第三半导体区域和第一半导体区域形成一箝位晶体管,以及
所述第一、第二、第三和第四半导体区域相互或叉指状组合。
2.如权利要求1的电路装置,其特征在于,该开关晶体管为一NPN晶体管。
3.如权利要求1或2的电路装置,其特征在于,箝位晶体管为一PNP晶体管。
4.一种包括一开关晶体管电路装置的集成电路装置,该开关晶体管电路装置包括一半导体衬底,该衬底具有:
分别形成一开关晶体管的控制电极和信号电极的第一和第二半导体区域;
形成该开关晶体管的第二信号电极的第三半导体区域;以及
沿第一和第二半导体区域延伸并与第三半导体区域形成一个二极管结的第四半导体区域,该二极管结在衬底相当大的面积上延伸,所述开关晶体管电路装置的特征在于,
将第四半导体区域设置成与第三半导体区域和第一半导体区域形成一箝拉晶体管,以及
所述第一、第二、第三和第四半导体区域相互或叉指状组合。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR9304170 | 1993-04-08 | ||
FR9304170A FR2703830B1 (fr) | 1993-04-08 | 1993-04-08 | Ensemble à transistor de commutation. |
Publications (2)
Publication Number | Publication Date |
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CN1095863A CN1095863A (zh) | 1994-11-30 |
CN1035090C true CN1035090C (zh) | 1997-06-04 |
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CN94104613A Expired - Fee Related CN1035090C (zh) | 1993-04-08 | 1994-04-07 | 开关晶体管电路装置 |
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Country | Link |
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JP (1) | JPH07130761A (zh) |
CN (1) | CN1035090C (zh) |
DE (1) | DE4411859A1 (zh) |
FR (1) | FR2703830B1 (zh) |
GB (1) | GB2276981B (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100381062C (zh) * | 1999-12-09 | 2008-04-16 | 纽西兰乳品局 | 乳制品及其制备方法 |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
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JP3577946B2 (ja) * | 1998-04-27 | 2004-10-20 | トヨタ自動車株式会社 | 燃焼式ヒータを有する圧縮着火式内燃機関 |
CN101931010A (zh) * | 2010-06-24 | 2010-12-29 | 深圳市鹏微科技有限公司 | 二极管及其制造方法 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0425242A1 (en) * | 1989-10-24 | 1991-05-02 | Sony Corporation | Bipolar transistor structure |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2527008A1 (fr) * | 1982-05-14 | 1983-11-18 | Thomson Csf | Structure semiconductrice de type mesa associant une diode et un transistor de types transverses en antiparallele |
DE3331631A1 (de) * | 1982-09-01 | 1984-03-01 | Mitsubishi Denki K.K., Tokyo | Halbleiter-bauelement |
DE3247006A1 (de) * | 1982-12-18 | 1984-06-20 | Telefunken electronic GmbH, 6000 Frankfurt | Integrierte transistoranordnung |
EP0491217A1 (de) * | 1990-12-19 | 1992-06-24 | Siemens Aktiengesellschaft | Integrierte Transistor-Freilaufdioden-Anordnung |
-
1993
- 1993-04-08 FR FR9304170A patent/FR2703830B1/fr not_active Expired - Fee Related
-
1994
- 1994-03-23 GB GB9405770A patent/GB2276981B/en not_active Expired - Fee Related
- 1994-04-06 DE DE19944411859 patent/DE4411859A1/de not_active Withdrawn
- 1994-04-06 JP JP9070194A patent/JPH07130761A/ja active Pending
- 1994-04-07 CN CN94104613A patent/CN1035090C/zh not_active Expired - Fee Related
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0425242A1 (en) * | 1989-10-24 | 1991-05-02 | Sony Corporation | Bipolar transistor structure |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100381062C (zh) * | 1999-12-09 | 2008-04-16 | 纽西兰乳品局 | 乳制品及其制备方法 |
Also Published As
Publication number | Publication date |
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GB9405770D0 (en) | 1994-05-11 |
DE4411859A1 (de) | 1994-10-13 |
GB2276981B (en) | 1997-04-02 |
FR2703830A1 (fr) | 1994-10-14 |
CN1095863A (zh) | 1994-11-30 |
GB2276981A (en) | 1994-10-12 |
JPH07130761A (ja) | 1995-05-19 |
FR2703830B1 (fr) | 1997-07-04 |
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