DE4192352T - - Google Patents

Info

Publication number
DE4192352T
DE4192352T DE19914192352 DE4192352T DE4192352T DE 4192352 T DE4192352 T DE 4192352T DE 19914192352 DE19914192352 DE 19914192352 DE 4192352 T DE4192352 T DE 4192352T DE 4192352 T DE4192352 T DE 4192352T
Authority
DE
Germany
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE19914192352
Other languages
German (de)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of DE4192352T publication Critical patent/DE4192352T/de
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
    • H01L29/6675—Amorphous silicon or polysilicon transistors
    • H01L29/66765—Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42384—Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/4908—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET for thin film semiconductor, e.g. gate of TFT

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Thin Film Transistor (AREA)
DE19914192352 1990-10-05 1991-10-02 Withdrawn DE4192352T (ko)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US59342390A 1990-10-05 1990-10-05

Publications (1)

Publication Number Publication Date
DE4192352T true DE4192352T (ko) 1992-10-08

Family

ID=24374648

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19914192352 Withdrawn DE4192352T (ko) 1990-10-05 1991-10-02

Country Status (4)

Country Link
JP (1) JPH04505830A (ko)
DE (1) DE4192352T (ko)
GB (1) GB2254187A (ko)
WO (1) WO1992006497A1 (ko)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2965283B2 (ja) * 1994-07-13 1999-10-18 ヒュンダイ エレクトロニクス インダストリーズ カムパニー リミテッド 薄膜トランジスタの製造方法
KR100392909B1 (ko) * 1997-08-26 2004-03-22 엘지.필립스 엘시디 주식회사 박막트랜지스터및그의제조방법
FR2761809B1 (fr) * 1997-03-04 2002-03-01 Lg Electronics Inc Transistor en couche mince et son procede de fabrication
GB2338105B (en) * 1997-03-04 2000-04-12 Lg Electronics Inc Method of making a thin film transistor
KR100248123B1 (ko) 1997-03-04 2000-03-15 구본준 박막트랜지스터및그의제조방법
KR100430950B1 (ko) * 1998-09-01 2004-06-16 엘지.필립스 엘시디 주식회사 박막트랜지스터 및 그 제조방법

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3279239D1 (en) * 1981-07-27 1988-12-29 Toshiba Kk Thin-film transistor and method of manufacture therefor
US4651185A (en) * 1983-08-15 1987-03-17 Alphasil, Inc. Method of manufacturing thin film transistors and transistors made thereby
JPS62239579A (ja) * 1986-04-10 1987-10-20 Alps Electric Co Ltd 薄膜トランジスタの製造方法
EP0270323B1 (en) * 1986-11-29 1999-11-03 Sharp Kabushiki Kaisha Method of manufacture of a thin-film transistor
US4767723A (en) * 1987-10-30 1988-08-30 International Business Machines Corporation Process for making self-aligning thin film transistors

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
Appl. Phys. Lett. 54 (21), May 1989, pp. 2079-2081 *
Technische Rundschau 50/86, pp. 76-81 *

Also Published As

Publication number Publication date
JPH04505830A (ja) 1992-10-08
GB9209424D0 (en) 1992-07-22
GB2254187A (en) 1992-09-30
WO1992006497A1 (en) 1992-04-16

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Legal Events

Date Code Title Description
8128 New person/name/address of the agent

Representative=s name: SIEB, R., DIPL.-CHEM. DR.RER.NAT., PAT.-ANW., 6947

8110 Request for examination paragraph 44
8120 Willingness to grant licenses paragraph 23
8139 Disposal/non-payment of the annual fee