DE4010889A1 - Verfahren zum herstellen einer vergrabenen laserdiode mit heterostruktur - Google Patents

Verfahren zum herstellen einer vergrabenen laserdiode mit heterostruktur

Info

Publication number
DE4010889A1
DE4010889A1 DE4010889A DE4010889A DE4010889A1 DE 4010889 A1 DE4010889 A1 DE 4010889A1 DE 4010889 A DE4010889 A DE 4010889A DE 4010889 A DE4010889 A DE 4010889A DE 4010889 A1 DE4010889 A1 DE 4010889A1
Authority
DE
Germany
Prior art keywords
layer
active layer
mesa structure
current blocking
etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE4010889A
Other languages
German (de)
English (en)
Other versions
DE4010889C2 (enExample
Inventor
Kim Sang-Bae
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Electronics and Telecommunications Research Institute
KT Corp
Original Assignee
Electronics and Telecommunications Research Institute
KT Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Electronics and Telecommunications Research Institute, KT Corp filed Critical Electronics and Telecommunications Research Institute
Publication of DE4010889A1 publication Critical patent/DE4010889A1/de
Application granted granted Critical
Publication of DE4010889C2 publication Critical patent/DE4010889C2/de
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/955—Melt-back

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)
DE4010889A 1989-04-06 1990-04-04 Verfahren zum herstellen einer vergrabenen laserdiode mit heterostruktur Granted DE4010889A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019890004512A KR910008439B1 (ko) 1989-04-06 1989-04-06 매립형 레이저 다이오드의 제조방법

Publications (2)

Publication Number Publication Date
DE4010889A1 true DE4010889A1 (de) 1990-10-11
DE4010889C2 DE4010889C2 (enExample) 1992-09-03

Family

ID=19285132

Family Applications (1)

Application Number Title Priority Date Filing Date
DE4010889A Granted DE4010889A1 (de) 1989-04-06 1990-04-04 Verfahren zum herstellen einer vergrabenen laserdiode mit heterostruktur

Country Status (5)

Country Link
US (1) US4994143A (enExample)
JP (1) JPH02288288A (enExample)
KR (1) KR910008439B1 (enExample)
DE (1) DE4010889A1 (enExample)
GB (1) GB2230383B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4226497A1 (de) * 1992-08-11 1994-02-17 Daimler Benz Ag Verfahren zum Dünnätzen eines Siliziumsubstrates

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0450255B1 (en) * 1990-04-06 1994-07-06 International Business Machines Corporation Process for forming the ridge structure of a self-aligned semiconductor laser
US5255281A (en) * 1990-04-26 1993-10-19 Fujitsu Limited Semiconductor laser having double heterostructure
US5202285A (en) * 1990-04-26 1993-04-13 Fujitsu Limited Semiconductor laser having double heterostructure and method of producing same
FR2674684A1 (fr) * 1991-03-28 1992-10-02 Alcatel Nv Procede de realisation d'un composant semiconducteur tel qu'un laser a ruban enterre.
US5568501A (en) * 1993-11-01 1996-10-22 Matsushita Electric Industrial Co., Ltd. Semiconductor laser and method for producing the same
KR0146714B1 (ko) * 1994-08-08 1998-11-02 양승택 평면 매립형 레이저 다이오드의 제조방법
JPH09116222A (ja) * 1995-10-17 1997-05-02 Mitsubishi Electric Corp 半導体レーザの製造方法，及び半導体レーザ
KR980006665A (ko) * 1996-06-29 1998-03-30 김주용 광 소자의 제조방법
KR100203307B1 (ko) * 1996-06-29 1999-06-15 김영환 레이저 다이오드의 제조방법
KR100251348B1 (ko) 1996-12-30 2000-05-01 김영환 Rwg 레이저 다이오드 및 그 제조 방법
US6613679B2 (en) * 1999-12-22 2003-09-02 Matsushita Electric Industrial Co., Ltd. Method for fabricating a semiconductor device
DE60115887T2 (de) * 2001-09-03 2006-06-14 Agilent Technologies Inc Methode zur Ausrichtung eines passiven optischen Elements auf ein aktives optisches Element

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6085585A (ja) * 1983-10-17 1985-05-15 Nec Corp 埋め込み型半導体レ−ザ
GB2160823B (en) * 1984-06-28 1987-05-28 Stc Plc Semiconductor devices and their fabrication
FR2574601B1 (fr) * 1984-12-11 1987-07-17 Menigaux Louis Procede de fabrication d'un laser a semi-conducteur a ruban enterre
US4784722A (en) * 1985-01-22 1988-11-15 Massachusetts Institute Of Technology Method forming surface emitting diode laser
JPH0766994B2 (ja) * 1985-02-19 1995-07-19 シャープ株式会社 半導体レーザ素子
GB8622767D0 (en) * 1986-09-22 1986-10-29 British Telecomm Semiconductor structures
JPS63318192A (ja) * 1987-06-19 1988-12-27 Mitsubishi Electric Corp 半導体レ−ザの製造方法

Non-Patent Citations (5)

* Cited by examiner, † Cited by third party
Title
ARAI, S. et al.: 1.6 mum Wavelength GaInAsP/InP BH Lasers. In: US-Z.: IEEE Journal of Quantum Electronics, Vol. QE-17, No. 5, 1981, S. 640-645 *
ARAI, S. et al.: New 1.6 mum Wavelength GaInAsP/InP Buried Heterostructure Lasers. In: GB-Z.: Electronics Letters, Vol. 16, No. 10, 1980, S. 349-350 *
FUKUDA, M. et al.: Suppression of Interface Degradation in InGaAsP/InP Buried Heterostructure Lasers. In: US-Z.: Journal of Lightwave TechnologyVol. LT-5, No. 12, 1987, S. 1778-1781 *
TSANG, W.T. et al.: A new lateral selective-area growth by liquid-phase epitaxy: The formation of a lateral double-barrier buried-heterostructurelaser. In:US-Z.: Appl. Phys. Lett.,Vol. 40, No.11 1982, S. 942-944 *
US-B.: Thin Film Processes. Ed. by John L. Vossen,W. Kern. New York, Academic Press, 1978, S. 401-496 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4226497A1 (de) * 1992-08-11 1994-02-17 Daimler Benz Ag Verfahren zum Dünnätzen eines Siliziumsubstrates

Also Published As

Publication number Publication date
GB2230383B (en) 1993-01-20
DE4010889C2 (enExample) 1992-09-03
KR900017243A (ko) 1990-11-15
US4994143A (en) 1991-02-19
GB9006850D0 (en) 1990-05-23
GB2230383A (en) 1990-10-17
JPH02288288A (ja) 1990-11-28
KR910008439B1 (ko) 1991-10-15

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Legal Events

Date Code Title Description
OP8 Request for examination as to paragraph 44 patent law
D2 Grant after examination
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee