DE3922833C2 - - Google Patents

Info

Publication number
DE3922833C2
DE3922833C2 DE3922833A DE3922833A DE3922833C2 DE 3922833 C2 DE3922833 C2 DE 3922833C2 DE 3922833 A DE3922833 A DE 3922833A DE 3922833 A DE3922833 A DE 3922833A DE 3922833 C2 DE3922833 C2 DE 3922833C2
Authority
DE
Germany
Prior art keywords
reaction chamber
semiconductor wafers
wall
suction pipes
gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE3922833A
Other languages
German (de)
English (en)
Other versions
DE3922833A1 (de
Inventor
Heinrich Dr. 8027 Neuried De Soehlbrand
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Publication of DE3922833A1 publication Critical patent/DE3922833A1/de
Application granted granted Critical
Publication of DE3922833C2 publication Critical patent/DE3922833C2/de
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0436—Apparatus for thermal treatment mainly by radiation
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/16—Feed and outlet means for the gases; Modifying the flow of the gases
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27B—FURNACES, KILNS, OVENS OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
    • F27B17/00—Furnaces of a kind not covered by any of groups F27B1/00 - F27B15/00
    • F27B17/0016—Chamber type furnaces
    • F27B17/0025—Chamber type furnaces specially adapted for treating semiconductor wafers

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
DE3922833A 1989-07-09 1989-07-09 Ofen zur waermebehandlung von halbleiterscheiben und verfahren zum betrieb desselben Granted DE3922833A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE8908382U DE8908382U1 (de) 1989-07-09 1989-07-09 Ofen zur Wärmebehandlung von Halbleiterscheiben

Publications (2)

Publication Number Publication Date
DE3922833A1 DE3922833A1 (de) 1991-01-10
DE3922833C2 true DE3922833C2 (https=) 1992-05-21

Family

ID=6840939

Family Applications (2)

Application Number Title Priority Date Filing Date
DE8908382U Expired - Lifetime DE8908382U1 (de) 1989-07-09 1989-07-09 Ofen zur Wärmebehandlung von Halbleiterscheiben
DE3922833A Granted DE3922833A1 (de) 1989-07-09 1989-07-09 Ofen zur waermebehandlung von halbleiterscheiben und verfahren zum betrieb desselben

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE8908382U Expired - Lifetime DE8908382U1 (de) 1989-07-09 1989-07-09 Ofen zur Wärmebehandlung von Halbleiterscheiben

Country Status (1)

Country Link
DE (2) DE8908382U1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4338506A1 (de) * 1993-11-11 1995-05-18 Daimler Benz Ag Anordnung zur thermischen Behandlung von Halbleitersubstraten

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1159567B (de) * 1960-10-14 1963-12-19 Telefunken Patent Vorrichtung zum gleichzeitigen Herstellen ebener Diffusionsfronten in mehreren Halbleiterkoerpern, insbesondere fuer Transistoren oder Dioden
FR2487926B2 (fr) * 1980-07-31 1986-04-25 Verbiese Perfectionnement au dispositif permettant l'etablissement d'une loi de repartition determinee du debit dans une veine liquide
DE3544812A1 (de) * 1985-12-18 1987-06-25 Heraeus Schott Quarzschmelze Doppelwand-quarzglasrohr fuer die durchfuehrung halbleitertechnologischer prozesse
DE8801785U1 (de) * 1988-02-11 1988-11-10 Söhlbrand, Heinrich, Dr. Dipl.-Chem., 8027 Neuried Vorrichtung zur Temperaturbehandlung von Halbleitermaterialien
DE8902307U1 (de) * 1989-02-27 1989-08-31 Söhlbrand, Heinrich, Dr. Dipl.-Chem., 8027 Neuried Vorrichtung zur thermischen Behandlung von Halbleitermaterialien
DE3906075A1 (de) * 1989-02-27 1990-08-30 Soehlbrand Heinrich Dr Dipl Ch Verfahren zur thermischen behandlung von halbleitermaterialien und vorrichtung zur durchfuehrung desselben

Also Published As

Publication number Publication date
DE3922833A1 (de) 1991-01-10
DE8908382U1 (de) 1990-11-08

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Legal Events

Date Code Title Description
OM8 Search report available as to paragraph 43 lit. 1 sentence 1 patent law
OP8 Request for examination as to paragraph 44 patent law
D2 Grant after examination
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee