DE3920219A1 - Betrieb eines optischen detektors bzw. optischer detektor geeignet fuer diesen betrieb - Google Patents

Betrieb eines optischen detektors bzw. optischer detektor geeignet fuer diesen betrieb

Info

Publication number
DE3920219A1
DE3920219A1 DE3920219A DE3920219A DE3920219A1 DE 3920219 A1 DE3920219 A1 DE 3920219A1 DE 3920219 A DE3920219 A DE 3920219A DE 3920219 A DE3920219 A DE 3920219A DE 3920219 A1 DE3920219 A1 DE 3920219A1
Authority
DE
Germany
Prior art keywords
layer
optical detector
active
detector
active layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE3920219A
Other languages
German (de)
English (en)
Other versions
DE3920219C2 (enExample
Inventor
Heinz Prof Dr Rer Nat Beneking
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Licentia Patent Verwaltungs GmbH
Original Assignee
Telefunken Electronic GmbH
Licentia Patent Verwaltungs GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Telefunken Electronic GmbH, Licentia Patent Verwaltungs GmbH filed Critical Telefunken Electronic GmbH
Priority to DE3920219A priority Critical patent/DE3920219A1/de
Publication of DE3920219A1 publication Critical patent/DE3920219A1/de
Application granted granted Critical
Publication of DE3920219C2 publication Critical patent/DE3920219C2/de
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/147—Shapes of bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/223—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PIN barrier
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/227—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a Schottky barrier

Landscapes

  • Light Receiving Elements (AREA)
DE3920219A 1989-06-21 1989-06-21 Betrieb eines optischen detektors bzw. optischer detektor geeignet fuer diesen betrieb Granted DE3920219A1 (de)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DE3920219A DE3920219A1 (de) 1989-06-21 1989-06-21 Betrieb eines optischen detektors bzw. optischer detektor geeignet fuer diesen betrieb

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE3920219A DE3920219A1 (de) 1989-06-21 1989-06-21 Betrieb eines optischen detektors bzw. optischer detektor geeignet fuer diesen betrieb

Publications (2)

Publication Number Publication Date
DE3920219A1 true DE3920219A1 (de) 1991-01-10
DE3920219C2 DE3920219C2 (enExample) 1993-07-29

Family

ID=6383188

Family Applications (1)

Application Number Title Priority Date Filing Date
DE3920219A Granted DE3920219A1 (de) 1989-06-21 1989-06-21 Betrieb eines optischen detektors bzw. optischer detektor geeignet fuer diesen betrieb

Country Status (1)

Country Link
DE (1) DE3920219A1 (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10040459A1 (de) * 2000-08-18 2002-03-21 Infineon Technologies Ag PIN-Fotodiode in einer vertikal strukturierten Schichtenfolge und Verfahren zur Herstellung einer PIN-Diode
US6553157B2 (en) 1999-09-07 2003-04-22 Infineon Technologies Ag Optoelectronic microelectronic system
WO2008145829A1 (en) * 2007-05-31 2008-12-04 Teknillinen Korkeakoulu Absolute radiation power measurement

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2986591A (en) * 1955-10-17 1961-05-30 Ibm Photovoltaic cell
US3508126A (en) * 1964-08-19 1970-04-21 Philips Corp Semiconductor photodiode with p-n junction spaced from heterojunction
US3873828A (en) * 1973-08-23 1975-03-25 Hughes Aircraft Co Integrated optical detector
DE2524769A1 (de) * 1974-06-12 1976-01-02 Philips Nv Photodiode
US4174561A (en) * 1976-02-09 1979-11-20 Semicon, Inc. Method of fabricating high intensity solar energy converter
DE3215083A1 (de) * 1981-04-24 1982-11-18 Western Electric Co., Inc., 10038 New York, N.Y. Majoritaetsladungstraeger-photodetektor
DE3534483A1 (de) * 1985-09-27 1987-04-02 Battelle Institut E V Halbleiter-photoleitungsdetektor
EP0260052A2 (en) * 1986-09-11 1988-03-16 AT&T Corp. Semiconductor device including ordered layers

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2986591A (en) * 1955-10-17 1961-05-30 Ibm Photovoltaic cell
US3508126A (en) * 1964-08-19 1970-04-21 Philips Corp Semiconductor photodiode with p-n junction spaced from heterojunction
US3873828A (en) * 1973-08-23 1975-03-25 Hughes Aircraft Co Integrated optical detector
DE2524769A1 (de) * 1974-06-12 1976-01-02 Philips Nv Photodiode
US4174561A (en) * 1976-02-09 1979-11-20 Semicon, Inc. Method of fabricating high intensity solar energy converter
DE3215083A1 (de) * 1981-04-24 1982-11-18 Western Electric Co., Inc., 10038 New York, N.Y. Majoritaetsladungstraeger-photodetektor
DE3534483A1 (de) * 1985-09-27 1987-04-02 Battelle Institut E V Halbleiter-photoleitungsdetektor
EP0260052A2 (en) * 1986-09-11 1988-03-16 AT&T Corp. Semiconductor device including ordered layers

Non-Patent Citations (11)

* Cited by examiner, † Cited by third party
Title
BAN, Vladimir S.: InGaAsP:The Next Generation in Photonics MaterialsIn: Solid State Technology, Febr. 1987, S.99-105 *
DE-Z: Schnelle Pin-Fotodioden. In: Funkschau 19, 1982, S.74 *
DOLLAR *
et al.: A monolithic GalnAsP/InP Photovoltaic Power Converter. In: IEEE Trans- actions on Electron Devices. Vol. ED-29, No.9, Sept. 1982, S.1449-1454 *
FUDURICH, Richard L.: Theoretical optimization and parametric study of n-on-p Alx-Ga1-xAs-GaAs graded band-gap solar cellIn: Journal of Applied Physics, Vol.47, No.7, July1976, S.3152-3158 *
GB-Z: DIAKIUK, V. *
GROVES, S.H.: Double-hetero- strukture InGaAs/InP PIN Photodetectors.In: Solid-State Electronics, Vol.29, 1986, S.229-233 *
US-Z: CHEO, P.K.: Optical waveguides and devices. In: J.Vac.Sci.Technol., Vol.12, No.4, July/Aug. 1975, S.916-918 *
US-Z: HUTCHBY, James A. *
US-Z: OLSEN, Gregory H. *
US-Z: WILLIE W. NG. *

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6553157B2 (en) 1999-09-07 2003-04-22 Infineon Technologies Ag Optoelectronic microelectronic system
DE10040459A1 (de) * 2000-08-18 2002-03-21 Infineon Technologies Ag PIN-Fotodiode in einer vertikal strukturierten Schichtenfolge und Verfahren zur Herstellung einer PIN-Diode
WO2008145829A1 (en) * 2007-05-31 2008-12-04 Teknillinen Korkeakoulu Absolute radiation power measurement

Also Published As

Publication number Publication date
DE3920219C2 (enExample) 1993-07-29

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Legal Events

Date Code Title Description
OM8 Search report available as to paragraph 43 lit. 1 sentence 1 patent law
OP8 Request for examination as to paragraph 44 patent law
8127 New person/name/address of the applicant

Owner name: LICENTIA PATENT-VERWALTUNGS-GMBH, 6000 FRANKFURT,

8120 Willingness to grant licences paragraph 23
D2 Grant after examination
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee