DE69610449T2 - Halbleiterquelle mit grosser spektraler Breite und hoher Ausgangsleistung - Google Patents

Halbleiterquelle mit grosser spektraler Breite und hoher Ausgangsleistung

Info

Publication number
DE69610449T2
DE69610449T2 DE69610449T DE69610449T DE69610449T2 DE 69610449 T2 DE69610449 T2 DE 69610449T2 DE 69610449 T DE69610449 T DE 69610449T DE 69610449 T DE69610449 T DE 69610449T DE 69610449 T2 DE69610449 T2 DE 69610449T2
Authority
DE
Germany
Prior art keywords
output power
high output
spectral width
semiconductor source
large spectral
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69610449T
Other languages
English (en)
Other versions
DE69610449D1 (de
Inventor
Kang-Yih Liou
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
AT&T Corp
AT&T IPM Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by AT&T Corp, AT&T IPM Corp filed Critical AT&T Corp
Application granted granted Critical
Publication of DE69610449D1 publication Critical patent/DE69610449D1/de
Publication of DE69610449T2 publication Critical patent/DE69610449T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/50—Amplifier structures not provided for in groups H01S5/02 - H01S5/30
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching
    • H01S5/2277—Buried mesa structure ; Striped active layer mesa created by etching double channel planar buried heterostructure [DCPBH] laser

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Led Devices (AREA)
  • Semiconductor Lasers (AREA)
  • Optical Couplings Of Light Guides (AREA)
DE69610449T 1995-02-27 1996-02-14 Halbleiterquelle mit grosser spektraler Breite und hoher Ausgangsleistung Expired - Fee Related DE69610449T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/395,219 US5623363A (en) 1995-02-27 1995-02-27 Semiconductor light source having a spectrally broad, high power optical output

Publications (2)

Publication Number Publication Date
DE69610449D1 DE69610449D1 (de) 2000-11-02
DE69610449T2 true DE69610449T2 (de) 2001-02-15

Family

ID=23562136

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69610449T Expired - Fee Related DE69610449T2 (de) 1995-02-27 1996-02-14 Halbleiterquelle mit grosser spektraler Breite und hoher Ausgangsleistung

Country Status (6)

Country Link
US (1) US5623363A (de)
EP (1) EP0729208B1 (de)
JP (1) JPH08250821A (de)
CA (1) CA2165711C (de)
DE (1) DE69610449T2 (de)
MX (1) MX9600724A (de)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6795622B2 (en) * 1998-06-24 2004-09-21 The Trustess Of Princeton University Photonic integrated circuits
US6381380B1 (en) * 1998-06-24 2002-04-30 The Trustees Of Princeton University Twin waveguide based design for photonic integrated circuits
US6429965B1 (en) * 1998-11-02 2002-08-06 The Board Of Trustees The Leland Stanford Junior University Polarization and wavelength stable superfluorescent sources
US6330378B1 (en) 2000-05-12 2001-12-11 The Trustees Of Princeton University Photonic integrated detector having a plurality of asymmetric waveguides
US6483863B2 (en) 2001-01-19 2002-11-19 The Trustees Of Princeton University Asymmetric waveguide electroabsorption-modulated laser
US6493132B1 (en) * 2001-02-14 2002-12-10 Agere Systems Guardian Corp. Monolithic optically pumped high power semiconductor lasers and amplifiers
US20050196170A1 (en) * 2004-03-02 2005-09-08 Winsor Robert S. Method and apparatus for free space optical communication using incoherent light
US7230963B2 (en) * 2004-04-14 2007-06-12 The Trustees Of Princeton University Monolithic wavelength stabilized asymmetric laser
US20060025093A1 (en) * 2004-07-28 2006-02-02 Microsoft Corporation Broadcast metadata plug-in model
US7333689B2 (en) * 2005-09-30 2008-02-19 The Trustees Of Princeton University Photonic integrated devices having reduced absorption loss
US7343061B2 (en) * 2005-11-15 2008-03-11 The Trustees Of Princeton University Integrated photonic amplifier and detector
US8326217B2 (en) * 2006-01-18 2012-12-04 Overhorizon (Cyprus) Plc Systems and methods for satellite communications with mobile terrestrial terminals
US7826693B2 (en) * 2006-10-26 2010-11-02 The Trustees Of Princeton University Monolithically integrated reconfigurable optical add-drop multiplexer
CN117117635A (zh) * 2023-08-24 2023-11-24 武汉敏芯半导体股份有限公司 一种半导体光放大器及其制造方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3836802A1 (de) * 1988-10-28 1990-05-03 Siemens Ag Halbleiterlaseranordnung fuer hohe ausgangsleistungen im lateralen grundmodus
US5005212A (en) * 1989-12-12 1991-04-02 At&T Bell Laboratories Interference suppression in optical communication systems
US5003550A (en) * 1990-03-09 1991-03-26 Spectra Diode Laboratories, Inc. Integrated laser-amplifier with steerable beam
US5175643A (en) * 1991-09-30 1992-12-29 Xerox Corporation Monolithic integrated master oscillator power amplifier
US5311344A (en) * 1992-09-02 1994-05-10 At&T Bell Laboratories Bidirectional lightwave transmission system
US5349601A (en) * 1993-09-20 1994-09-20 The United States Of America As Represented By The United States Department Of Energy Unidirectional ring lasers
US5440576A (en) * 1994-04-18 1995-08-08 Sdl, Inc. Branched MOPA device with phased array of amplifiers

Also Published As

Publication number Publication date
CA2165711A1 (en) 1996-08-28
CA2165711C (en) 1999-07-06
EP0729208A1 (de) 1996-08-28
US5623363A (en) 1997-04-22
DE69610449D1 (de) 2000-11-02
MX9600724A (es) 1997-02-28
JPH08250821A (ja) 1996-09-27
EP0729208B1 (de) 2000-09-27

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee