DE3910449A1 - Wafer aus halbleitermaterial - Google Patents
Wafer aus halbleitermaterialInfo
- Publication number
- DE3910449A1 DE3910449A1 DE3910449A DE3910449A DE3910449A1 DE 3910449 A1 DE3910449 A1 DE 3910449A1 DE 3910449 A DE3910449 A DE 3910449A DE 3910449 A DE3910449 A DE 3910449A DE 3910449 A1 DE3910449 A1 DE 3910449A1
- Authority
- DE
- Germany
- Prior art keywords
- atoms
- oxygen concentration
- less
- decrease
- approximately
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 9
- 239000000463 material Substances 0.000 title claims description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 23
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 23
- 239000010703 silicon Substances 0.000 claims abstract description 23
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 19
- 239000001301 oxygen Substances 0.000 claims abstract description 19
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 19
- 239000002184 metal Substances 0.000 claims abstract description 11
- 235000012431 wafers Nutrition 0.000 claims description 29
- 238000010438 heat treatment Methods 0.000 claims description 17
- 238000011109 contamination Methods 0.000 claims description 4
- 239000012535 impurity Substances 0.000 abstract description 6
- 238000004519 manufacturing process Methods 0.000 abstract description 6
- 238000000034 method Methods 0.000 abstract description 3
- 238000009826 distribution Methods 0.000 abstract description 2
- 238000007669 thermal treatment Methods 0.000 abstract 1
- 239000013078 crystal Substances 0.000 description 14
- 125000004429 atom Chemical group 0.000 description 13
- 239000010453 quartz Substances 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 239000000356 contaminant Substances 0.000 description 4
- 239000002245 particle Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 229910001882 dioxygen Inorganic materials 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 238000011282 treatment Methods 0.000 description 2
- 238000005033 Fourier transform infrared spectroscopy Methods 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
- H01L21/08—Preparation of the foundation plate
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/10—Crucibles or containers for supporting the melt
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63176089A JPH0226031A (ja) | 1988-07-14 | 1988-07-14 | シリコンウェーハ |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE3910449A1 true DE3910449A1 (de) | 1990-01-18 |
Family
ID=16007517
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE3910449A Withdrawn DE3910449A1 (de) | 1988-07-14 | 1989-03-31 | Wafer aus halbleitermaterial |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JPH0226031A (ja) |
| KR (1) | KR900002404A (ja) |
| DE (1) | DE3910449A1 (ja) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0419044A1 (en) * | 1989-08-23 | 1991-03-27 | Shin-Etsu Handotai Company, Limited | Single crystal silicon |
| DE4330598C2 (de) * | 1992-09-10 | 2002-10-24 | Hemlock Semiconductor Corp | Verfahren zur Analyse von Verunreinigungen bei Siliciumbrocken |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5593494A (en) * | 1995-03-14 | 1997-01-14 | Memc Electronic Materials, Inc. | Precision controlled precipitation of oxygen in silicon |
| KR20020092040A (ko) * | 2001-06-01 | 2002-12-11 | 송호봉 | 멤브레인 프레스장치 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1515971A (en) * | 1975-05-27 | 1978-06-28 | Ibm | Growing silicon crystals |
| DD265916A1 (de) * | 1987-11-10 | 1989-03-15 | Freiberg Spurenmetalle Veb | Verfahren zur zuechtung von hochreinen siliciumeinkristallen |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57118647A (en) * | 1981-01-14 | 1982-07-23 | Fujitsu Ltd | Manufacture of semiconductor device |
| JPS60137892A (ja) * | 1983-12-26 | 1985-07-22 | Toshiba Ceramics Co Ltd | 石英ガラスルツボ |
| JPS6212692A (ja) * | 1985-07-10 | 1987-01-21 | Fujitsu Ltd | 単結晶半導体の成長方法 |
| JPH085739B2 (ja) * | 1986-12-26 | 1996-01-24 | 東芝セラミツクス株式会社 | 石英ガラスルツボの製造方法 |
-
1988
- 1988-07-14 JP JP63176089A patent/JPH0226031A/ja active Pending
-
1989
- 1989-03-30 KR KR1019890004072A patent/KR900002404A/ko not_active Application Discontinuation
- 1989-03-31 DE DE3910449A patent/DE3910449A1/de not_active Withdrawn
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1515971A (en) * | 1975-05-27 | 1978-06-28 | Ibm | Growing silicon crystals |
| DD265916A1 (de) * | 1987-11-10 | 1989-03-15 | Freiberg Spurenmetalle Veb | Verfahren zur zuechtung von hochreinen siliciumeinkristallen |
Non-Patent Citations (4)
| Title |
|---|
| Appl. Phys. Lett. 52, 10, März 1988, S. 836, 837 * |
| Japanese Journal of Applied Physics, Vol. 28, No. 12, 1989, S. 2413-2420 * |
| JP 59-2 17 700 A. In: Patents Abstracts of Japan, Sect. C, Vol. 9, 1985, Nr. 88, C-276 * |
| JP 63-1 66 791 A. In: Patents Abstracts of Japan, Sect. C, Vol. 12, 1988, Nr. 444, C-545 * |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0419044A1 (en) * | 1989-08-23 | 1991-03-27 | Shin-Etsu Handotai Company, Limited | Single crystal silicon |
| US5067989A (en) * | 1989-08-23 | 1991-11-26 | Shin Etsu Handotai Co., Ltd. | Single crystal silicon |
| DE4330598C2 (de) * | 1992-09-10 | 2002-10-24 | Hemlock Semiconductor Corp | Verfahren zur Analyse von Verunreinigungen bei Siliciumbrocken |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0226031A (ja) | 1990-01-29 |
| KR900002404A (ko) | 1990-02-28 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OP8 | Request for examination as to paragraph 44 patent law | ||
| 8130 | Withdrawal |