DE3888892T2 - Verfahren zur Herstellung von supraleitenden Oxiden und dünne Schichten aus diesen Oxiden. - Google Patents

Verfahren zur Herstellung von supraleitenden Oxiden und dünne Schichten aus diesen Oxiden.

Info

Publication number
DE3888892T2
DE3888892T2 DE3888892T DE3888892T DE3888892T2 DE 3888892 T2 DE3888892 T2 DE 3888892T2 DE 3888892 T DE3888892 T DE 3888892T DE 3888892 T DE3888892 T DE 3888892T DE 3888892 T2 DE3888892 T2 DE 3888892T2
Authority
DE
Germany
Prior art keywords
oxides
production
thin layers
superconducting
superconducting oxides
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE3888892T
Other languages
English (en)
Other versions
DE3888892D1 (de
Inventor
Rameshwar Nath Bhargava
William Noel Osborne
Walter Karl Zwicker
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of DE3888892D1 publication Critical patent/DE3888892D1/de
Application granted granted Critical
Publication of DE3888892T2 publication Critical patent/DE3888892T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00Superconducting devices
    • H10N60/01Manufacture or treatment
    • H10N60/0268Manufacture or treatment of devices comprising copper oxide
    • H10N60/0296Processes for depositing or forming copper oxide superconductor layers
    • H10N60/0324Processes for depositing or forming copper oxide superconductor layers from a solution
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01GCOMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G3/00Compounds of copper
    • C01G3/006Compounds containing, besides copper, two or more other elements, with the exception of oxygen or hydrogen
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C04B35/45Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on copper oxide or solid solutions thereof with other oxides
    • C04B35/4504Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on copper oxide or solid solutions thereof with other oxides containing rare earth oxides
    • C04B35/4508Type 1-2-3
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/1204Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material inorganic material, e.g. non-oxide and non-metallic such as sulfides, nitrides based compounds
    • C23C18/1208Oxides, e.g. ceramics
    • C23C18/1216Metal oxides
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/125Process of deposition of the inorganic material
    • C23C18/1254Sol or sol-gel processing
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/125Process of deposition of the inorganic material
    • C23C18/1279Process of deposition of the inorganic material performed under reactive atmosphere, e.g. oxidising or reducing atmospheres
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/125Process of deposition of the inorganic material
    • C23C18/1283Control of temperature, e.g. gradual temperature increase, modulation of temperature
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01PINDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00Crystal-structural characteristics
    • C01P2002/70Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data
    • C01P2002/72Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data by d-values or two theta-values, e.g. as X-ray diagram
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00Superconductor technology: apparatus, material, process
    • Y10S505/725Process of making or treating high tc, above 30 k, superconducting shaped material, article, or device
    • Y10S505/734From organometallic precursors, e.g. acetylacetonates
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00Superconductor technology: apparatus, material, process
    • Y10S505/725Process of making or treating high tc, above 30 k, superconducting shaped material, article, or device
    • Y10S505/734From organometallic precursors, e.g. acetylacetonates
    • Y10S505/735From organometallic precursors, e.g. acetylacetonates by sol-gel process

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Thermal Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Dispersion Chemistry (AREA)
  • Structural Engineering (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Superconductors And Manufacturing Methods Therefor (AREA)
  • Oxygen, Ozone, And Oxides In General (AREA)
DE3888892T 1987-07-20 1988-07-13 Verfahren zur Herstellung von supraleitenden Oxiden und dünne Schichten aus diesen Oxiden. Expired - Fee Related DE3888892T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/075,491 US5106828A (en) 1987-07-20 1987-07-20 Method for fabricating superconductors by sol-gel process

Publications (2)

Publication Number Publication Date
DE3888892D1 DE3888892D1 (de) 1994-05-11
DE3888892T2 true DE3888892T2 (de) 1994-10-13

Family

ID=22126117

Family Applications (1)

Application Number Title Priority Date Filing Date
DE3888892T Expired - Fee Related DE3888892T2 (de) 1987-07-20 1988-07-13 Verfahren zur Herstellung von supraleitenden Oxiden und dünne Schichten aus diesen Oxiden.

Country Status (4)

Country Link
US (1) US5106828A (de)
EP (1) EP0300561B1 (de)
JP (1) JPS6456303A (de)
DE (1) DE3888892T2 (de)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5294599A (en) * 1987-06-17 1994-03-15 Nippon Telegraph And Telephone Corporation Processes for preparing oxide powders and superconducting oxides
US5252247A (en) * 1988-11-14 1993-10-12 Akzo America Inc. Metal (dialkylaminoalcoholate) solutions
US5316579A (en) * 1988-12-27 1994-05-31 Symetrix Corporation Apparatus for forming a thin film with a mist forming means
US6056994A (en) * 1988-12-27 2000-05-02 Symetrix Corporation Liquid deposition methods of fabricating layered superlattice materials
JPH03109205A (ja) * 1989-09-20 1991-05-09 Kokusai Chiyoudendou Sangyo Gijutsu Kenkyu Center 酸化物超電導体の製造方法
JPH03159902A (ja) * 1989-11-13 1991-07-09 Kokusai Chiyoudendou Sangyo Gijutsu Kenkyu Center 酸化物超電導体製造用複合酸化物及び酸化物超電導体の製造方法
US5087609A (en) * 1990-09-24 1992-02-11 Akzo Nv Formation of high temperature superconductor thin films by sol-gel techniques
US5418215A (en) * 1993-06-22 1995-05-23 The United States Of America As Represented By The Secretary Of The Army C-axis oriented high temperature superconductors deposited onto single crystals of gadolinium gallium garnet and method of making the same
US5691279A (en) * 1993-06-22 1997-11-25 The United States Of America As Represented By The Secretary Of The Army C-axis oriented high temperature superconductors deposited onto new compositions of garnet
US5585136A (en) * 1995-03-22 1996-12-17 Queen's University At Kingston Method for producing thick ceramic films by a sol gel coating process
US5637258A (en) * 1996-03-18 1997-06-10 Nanocrystals Technology L.P. Method for producing rare earth activited metal oxide nanocrystals
US6692660B2 (en) 2001-04-26 2004-02-17 Nanogram Corporation High luminescence phosphor particles and related particle compositions
US6849334B2 (en) 2001-08-17 2005-02-01 Neophotonics Corporation Optical materials and optical devices
DE19916403C1 (de) * 1999-04-06 2000-10-12 Hahn Meitner Inst Berlin Gmbh Verfahren zur Herstellung dünner, schwer löslicher Beschichtungen
US8153281B2 (en) * 2003-06-23 2012-04-10 Superpower, Inc. Metalorganic chemical vapor deposition (MOCVD) process and apparatus to produce multi-layer high-temperature superconducting (HTS) coated tape
EP1702971A4 (de) * 2003-10-30 2008-09-10 Japan Science & Tech Agency Elektrolumineszierendes material und davon gebrauch machendes elektrolumineszierendes element
EE05390B1 (et) * 2007-06-07 2011-04-15 Tartu �likool Meetod oksiidmaterjali valmistamiseks ja oksiidmaterjal
FI20085073A0 (fi) 2008-01-30 2008-01-30 Valtion Teknillinen Menetelmä kuumasinkittyjen ja termisesti ruiskutettujen tuotteiden sooli-geelipinnoitukseen

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4606906A (en) * 1984-11-15 1986-08-19 The United States Of America As Represented By The Secretary Of Commerce Process of synthesizing mixed BaO-TiO2 based powders for ceramic applications
JPS61275108A (ja) * 1985-05-30 1986-12-05 Mitsubishi Mining & Cement Co Ltd 誘電体粉末の製造方法
US4727201A (en) * 1986-07-07 1988-02-23 Phillips Petroleum Company Preparation of 1,4-dichlorobenzene
CA1288644C (en) * 1987-02-26 1991-09-10 Noriyuki Yoshida Oxide superconductive material and method of manufacturing the same
JPS63257132A (ja) * 1987-04-15 1988-10-25 Furukawa Electric Co Ltd:The 酸化物系超電導体の製造方法
JPS63256517A (ja) * 1987-04-15 1988-10-24 Hitachi Metals Ltd 超電導材の製造方法
JPS63260819A (ja) * 1987-04-20 1988-10-27 Agency Of Ind Science & Technol 超電導体の製造方法
JPS63270316A (ja) * 1987-04-28 1988-11-08 Toshiba Corp 酸化物超電導体の製造方法
JPS63282118A (ja) * 1987-05-13 1988-11-18 Hitachi Ltd 超伝導材料の製造方法
JPS6465006A (en) * 1987-05-28 1989-03-10 Nippon Mining Co Production of superconductive material
JPS6418901A (en) * 1987-07-10 1989-01-23 Hitachi Ltd Gel for oxide superconductor and production thereof
JPS6418916A (en) * 1987-07-10 1989-01-23 Toho Titanium Co Ltd Production of double metallic oxide for superconducting material

Also Published As

Publication number Publication date
EP0300561A3 (en) 1990-12-27
DE3888892D1 (de) 1994-05-11
US5106828A (en) 1992-04-21
EP0300561A2 (de) 1989-01-25
JPS6456303A (en) 1989-03-03
EP0300561B1 (de) 1994-04-06

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: PHILIPS ELECTRONICS N.V., EINDHOVEN, NL

8339 Ceased/non-payment of the annual fee