DE3888393D1 - BICMOS-Verfahren zur Herstellung selbstausrichtender NPN-Emitter und -Basen sowie MOSFET-Sources und -Drains. - Google Patents

BICMOS-Verfahren zur Herstellung selbstausrichtender NPN-Emitter und -Basen sowie MOSFET-Sources und -Drains.

Info

Publication number
DE3888393D1
DE3888393D1 DE88108318T DE3888393T DE3888393D1 DE 3888393 D1 DE3888393 D1 DE 3888393D1 DE 88108318 T DE88108318 T DE 88108318T DE 3888393 T DE3888393 T DE 3888393T DE 3888393 D1 DE3888393 D1 DE 3888393D1
Authority
DE
Germany
Prior art keywords
drains
aligning
bases
self
production
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE88108318T
Other languages
English (en)
Other versions
DE3888393T2 (de
Inventor
Robert H Havemann
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Inc
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Application granted granted Critical
Publication of DE3888393D1 publication Critical patent/DE3888393D1/de
Publication of DE3888393T2 publication Critical patent/DE3888393T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0107—Integrating at least one component covered by H10D12/00 or H10D30/00 with at least one component covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating IGFETs with BJTs
    • H10D84/0109—Integrating at least one component covered by H10D12/00 or H10D30/00 with at least one component covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating IGFETs with BJTs the at least one component covered by H10D12/00 or H10D30/00 being a MOS device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/14—Schottky barrier contacts
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/147—Silicides

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Bipolar Transistors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)
DE3888393T 1987-06-02 1988-05-25 BICMOS-Verfahren zur Herstellung selbstausrichtender NPN-Emitter und -Basen sowie MOSFET-Sources und -Drains. Expired - Fee Related DE3888393T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/057,871 US4774204A (en) 1987-06-02 1987-06-02 Method for forming self-aligned emitters and bases and source/drains in an integrated circuit

Publications (2)

Publication Number Publication Date
DE3888393D1 true DE3888393D1 (de) 1994-04-21
DE3888393T2 DE3888393T2 (de) 1994-07-28

Family

ID=22013237

Family Applications (1)

Application Number Title Priority Date Filing Date
DE3888393T Expired - Fee Related DE3888393T2 (de) 1987-06-02 1988-05-25 BICMOS-Verfahren zur Herstellung selbstausrichtender NPN-Emitter und -Basen sowie MOSFET-Sources und -Drains.

Country Status (5)

Country Link
US (1) US4774204A (de)
EP (1) EP0293731B1 (de)
JP (1) JP2860103B2 (de)
KR (1) KR970004840B1 (de)
DE (1) DE3888393T2 (de)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5227316A (en) * 1985-01-22 1993-07-13 National Semiconductor Corporation Method of forming self aligned extended base contact for a bipolar transistor having reduced cell size
US5198372A (en) * 1986-01-30 1993-03-30 Texas Instruments Incorporated Method for making a shallow junction bipolar transistor and transistor formed thereby
US5028554A (en) * 1986-07-03 1991-07-02 Oki Electric Industry Co., Ltd. Process of fabricating an MIS FET
US4877748A (en) * 1987-05-01 1989-10-31 Texas Instruments Incorporated Bipolar process for forming shallow NPN emitters
US5214302A (en) * 1987-05-13 1993-05-25 Hitachi, Ltd. Semiconductor integrated circuit device forming on a common substrate MISFETs isolated by a field oxide and bipolar transistors isolated by a groove
KR930006140B1 (ko) * 1988-01-21 1993-07-07 세이꼬 엡슨 가부시끼가이샤 Mis형 반도체 집적회로장치
US5075241A (en) * 1988-01-29 1991-12-24 Texas Instruments Incorporated Method of forming a recessed contact bipolar transistor and field effect device
US5015594A (en) * 1988-10-24 1991-05-14 International Business Machines Corporation Process of making BiCMOS devices having closely spaced device regions
JPH0348457A (ja) * 1989-04-14 1991-03-01 Toshiba Corp 半導体装置およびその製造方法
US5091760A (en) * 1989-04-14 1992-02-25 Kabushiki Kaisha Toshiba Semiconductor device
US4978637A (en) * 1989-05-31 1990-12-18 Sgs-Thomson Microelectronics, Inc. Local interconnect process for integrated circuits
JP2921889B2 (ja) * 1989-11-27 1999-07-19 株式会社東芝 半導体装置の製造方法
US5166771A (en) * 1990-01-12 1992-11-24 Paradigm Technology, Inc. Self-aligning contact and interconnect structure
US5483104A (en) * 1990-01-12 1996-01-09 Paradigm Technology, Inc. Self-aligning contact and interconnect structure
US5071778A (en) * 1990-06-26 1991-12-10 National Semiconductor Corporation Self-aligned collector implant for bipolar transistors
US5231052A (en) * 1991-02-14 1993-07-27 Industrial Technology Research Institute Process for forming a multilayer polysilicon semiconductor electrode
US5158900A (en) * 1991-10-18 1992-10-27 Hewlett-Packard Company Method of separately fabricating a base/emitter structure of a BiCMOS device
US5268317A (en) * 1991-11-12 1993-12-07 Siemens Aktiengesellschaft Method of forming shallow junctions in field effect transistors
DE4400200C2 (de) * 1993-01-05 1997-09-04 Toshiba Kawasaki Kk Halbleitervorrichtung mit verbesserter Verdrahtungsstruktur und Verfahren zu ihrer Herstellung
US5384268A (en) * 1993-01-22 1995-01-24 United Microelectronics Corporation Charge damage free implantation by introduction of a thin conductive layer
JPH07297400A (ja) * 1994-03-01 1995-11-10 Hitachi Ltd 半導体集積回路装置の製造方法およびそれにより得られた半導体集積回路装置
US5516710A (en) * 1994-11-10 1996-05-14 Northern Telecom Limited Method of forming a transistor
US6080645A (en) 1996-10-29 2000-06-27 Micron Technology, Inc. Method of making a doped silicon diffusion barrier region
US5926730A (en) * 1997-02-19 1999-07-20 Micron Technology, Inc. Conductor layer nitridation
US6015997A (en) 1997-02-19 2000-01-18 Micron Technology, Inc. Semiconductor structure having a doped conductive layer
US6884689B2 (en) * 2001-09-04 2005-04-26 United Microelectronics Corp. Fabrication of self-aligned bipolar transistor
US12088286B2 (en) * 2021-06-30 2024-09-10 Texas Instruments Incorporated Temperature sensors

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS567463A (en) * 1979-06-29 1981-01-26 Hitachi Ltd Semiconductor device and its manufacture
DE2946963A1 (de) * 1979-11-21 1981-06-04 Siemens AG, 1000 Berlin und 8000 München Schnelle bipolare transistoren
US4445268A (en) * 1981-02-14 1984-05-01 Mitsubishi Denki Kabushiki Kaisha Method of manufacturing a semiconductor integrated circuit BI-MOS device
JPS57199221A (en) * 1981-06-02 1982-12-07 Toshiba Corp Manufacture of semiconductor device
US4437897A (en) * 1982-05-18 1984-03-20 International Business Machines Corporation Fabrication process for a shallow emitter/base transistor using same polycrystalline layer
JPS58225663A (ja) * 1982-06-23 1983-12-27 Toshiba Corp 半導体装置の製造方法
DE3230077A1 (de) * 1982-08-12 1984-02-16 Siemens AG, 1000 Berlin und 8000 München Integrierte bipolar- und mos-transistoren enthaltende halbleiterschaltung auf einem chip und verfahren zu ihrer herstellung
US4558507A (en) * 1982-11-12 1985-12-17 Nec Corporation Method of manufacturing semiconductor device
DE3304588A1 (de) * 1983-02-10 1984-08-16 Siemens AG, 1000 Berlin und 8000 München Verfahren zum herstellen von mos-transistoren mit flachen source/drain-gebieten, kurzen kanallaengen und einer selbstjustierten, aus einem metallsilizid bestehenden kontaktierungsebene
US4450620A (en) * 1983-02-18 1984-05-29 Bell Telephone Laboratories, Incorporated Fabrication of MOS integrated circuit devices
JPS6018960A (ja) * 1983-07-12 1985-01-31 Nec Corp 半導体装置の製造方法
DE3334774A1 (de) * 1983-09-26 1985-04-11 Siemens AG, 1000 Berlin und 8000 München Integrierbarer npn-transistor
JPS6072272A (ja) * 1983-09-28 1985-04-24 Toshiba Corp 半導体装置の製造方法
US4665424A (en) * 1984-03-30 1987-05-12 Mitsubishi Denki Kabushiki Kaisha Semiconductor device
DE3580206D1 (de) * 1984-07-31 1990-11-29 Toshiba Kawasaki Kk Bipolarer transistor und verfahren zu seiner herstellung.
JPS6146063A (ja) * 1984-08-10 1986-03-06 Hitachi Ltd 半導体装置の製造方法
US4597163A (en) * 1984-12-21 1986-07-01 Zilog, Inc. Method of improving film adhesion between metallic silicide and polysilicon in thin film integrated circuit structures
US4682409A (en) * 1985-06-21 1987-07-28 Advanced Micro Devices, Inc. Fast bipolar transistor for integrated circuit structure and method for forming same
US4619038A (en) * 1985-08-15 1986-10-28 Motorola, Inc. Selective titanium silicide formation
EP0219641B1 (de) * 1985-09-13 1991-01-09 Siemens Aktiengesellschaft Integrierte Bipolar- und komplementäre MOS-Transistoren auf einem gemeinsamen Substrat enthaltende Schaltung und Verfahren zu ihrer Herstellung

Also Published As

Publication number Publication date
EP0293731A2 (de) 1988-12-07
KR970004840B1 (ko) 1997-04-04
EP0293731B1 (de) 1994-03-16
EP0293731A3 (en) 1989-09-27
DE3888393T2 (de) 1994-07-28
JP2860103B2 (ja) 1999-02-24
JPS6449254A (en) 1989-02-23
US4774204A (en) 1988-09-27
KR890001193A (ko) 1989-03-18

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee