DE3884810D1 - Gaseinspritzvorrichtung für reaktoren für den chemischen dampfniederschlag. - Google Patents

Gaseinspritzvorrichtung für reaktoren für den chemischen dampfniederschlag.

Info

Publication number
DE3884810D1
DE3884810D1 DE88906451T DE3884810T DE3884810D1 DE 3884810 D1 DE3884810 D1 DE 3884810D1 DE 88906451 T DE88906451 T DE 88906451T DE 3884810 T DE3884810 T DE 3884810T DE 3884810 D1 DE3884810 D1 DE 3884810D1
Authority
DE
Germany
Prior art keywords
reactors
vapor deposition
chemical vapor
injection device
gas injection
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE88906451T
Other languages
English (en)
Other versions
DE3884810T2 (de
Inventor
Lewis Barnett
Armand Ferro
Mark Hawkins
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ASM America Inc
Original Assignee
Advanced Semiconductor Materials America Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Semiconductor Materials America Inc filed Critical Advanced Semiconductor Materials America Inc
Application granted granted Critical
Publication of DE3884810D1 publication Critical patent/DE3884810D1/de
Publication of DE3884810T2 publication Critical patent/DE3884810T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45502—Flow conditions in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
DE88906451T 1988-06-22 1988-06-22 Gaseinspritzvorrichtung für reaktoren für den chemischen dampfniederschlag. Expired - Lifetime DE3884810T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/US1988/002125 WO1989012703A1 (en) 1988-06-22 1988-06-22 Gas injector apparatus for chemical vapor deposition reactors

Publications (2)

Publication Number Publication Date
DE3884810D1 true DE3884810D1 (de) 1993-11-11
DE3884810T2 DE3884810T2 (de) 1994-05-05

Family

ID=22208759

Family Applications (1)

Application Number Title Priority Date Filing Date
DE88906451T Expired - Lifetime DE3884810T2 (de) 1988-06-22 1988-06-22 Gaseinspritzvorrichtung für reaktoren für den chemischen dampfniederschlag.

Country Status (4)

Country Link
EP (1) EP0378543B1 (de)
JP (1) JP2745316B2 (de)
DE (1) DE3884810T2 (de)
WO (1) WO1989012703A1 (de)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5269847A (en) * 1990-08-23 1993-12-14 Applied Materials, Inc. Variable rate distribution gas flow reaction chamber
JP2641351B2 (ja) * 1990-08-23 1997-08-13 アプライド マテリアルズ インコーポレイテッド 可変分配率ガス流反応室
FR2739871B1 (fr) * 1995-10-11 1997-12-26 Sgs Thomson Microelectronics Dispositif d'injection de gaz dans un reacteur de depot chimique en phase vapeur
US5891250A (en) * 1998-05-05 1999-04-06 Memc Electronic Materials, Inc. Injector for reactor
US8088223B2 (en) 2005-03-10 2012-01-03 Asm America, Inc. System for control of gas injectors
US8067061B2 (en) 2007-10-25 2011-11-29 Asm America, Inc. Reaction apparatus having multiple adjustable exhaust ports
US8512472B2 (en) 2008-11-13 2013-08-20 Applied Materials, Inc. Method and apparatus to enhance process gas temperature in a CVD reactor
WO2014083400A1 (en) * 2012-11-27 2014-06-05 Soitec Deposition systems having interchangeable gas injectors and related methods
KR102127715B1 (ko) 2013-08-09 2020-06-29 에스케이실트론 주식회사 에피텍셜 반응기
CN109338464A (zh) * 2018-11-09 2019-02-15 浙江求是半导体设备有限公司 一种用于外延生长系统的气体注射装置
CN112941626B (zh) * 2021-01-22 2022-07-22 北京北方华创微电子装备有限公司 工艺腔室的进气组件、进气装置及半导体加工设备
CN113097106B (zh) * 2021-03-26 2024-05-17 北京北方华创微电子装备有限公司 半导体设备及半导体腔室

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1244733B (de) * 1963-11-05 1967-07-20 Siemens Ag Vorrichtung zum Aufwachsen einkristalliner Halbleitermaterialschichten auf einkristallinen Grundkoerpern
US3338209A (en) * 1965-10-23 1967-08-29 Sperry Rand Corp Epitaxial deposition apparatus
US3516811A (en) * 1966-10-04 1970-06-23 Indian Head Inc Method of and apparatus for coating glassware retaining its heat of formation
NL7003431A (de) * 1970-03-11 1971-09-14
US3785853A (en) * 1972-05-24 1974-01-15 Unicorp Inc Continuous deposition reactor
US4033286A (en) * 1976-07-12 1977-07-05 California Institute Of Technology Chemical vapor deposition reactor
FR2514033B1 (fr) * 1981-10-02 1985-09-27 Henaff Louis Installation pour le depot de couches minces en grande surface en phase vapeur reactive par plasma
US4499853A (en) * 1983-12-09 1985-02-19 Rca Corporation Distributor tube for CVD reactor
US4583492A (en) * 1983-12-19 1986-04-22 United Technologies Corporation High rate, low temperature silicon deposition system

Also Published As

Publication number Publication date
DE3884810T2 (de) 1994-05-05
EP0378543A1 (de) 1990-07-25
EP0378543B1 (de) 1993-10-06
JP2745316B2 (ja) 1998-04-28
WO1989012703A1 (en) 1989-12-28
JPH03500185A (ja) 1991-01-17
EP0378543A4 (en) 1990-12-12

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: ASM AMERICA, INC. (N.D.GES.DES STAATES DELAWARE),