FR2739871B1 - Dispositif d'injection de gaz dans un reacteur de depot chimique en phase vapeur - Google Patents

Dispositif d'injection de gaz dans un reacteur de depot chimique en phase vapeur

Info

Publication number
FR2739871B1
FR2739871B1 FR9512114A FR9512114A FR2739871B1 FR 2739871 B1 FR2739871 B1 FR 2739871B1 FR 9512114 A FR9512114 A FR 9512114A FR 9512114 A FR9512114 A FR 9512114A FR 2739871 B1 FR2739871 B1 FR 2739871B1
Authority
FR
France
Prior art keywords
chemical vapor
injection device
gas injection
vapor deposit
deposit reactor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR9512114A
Other languages
English (en)
Other versions
FR2739871A1 (fr
Inventor
Didier Dutartre
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SA
Original Assignee
SGS Thomson Microelectronics SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SGS Thomson Microelectronics SA filed Critical SGS Thomson Microelectronics SA
Priority to FR9512114A priority Critical patent/FR2739871B1/fr
Publication of FR2739871A1 publication Critical patent/FR2739871A1/fr
Application granted granted Critical
Publication of FR2739871B1 publication Critical patent/FR2739871B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45561—Gas plumbing upstream of the reaction chamber
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J4/00—Feed or outlet devices; Feed or outlet control devices
    • B01J4/02—Feed or outlet devices; Feed or outlet control devices for feeding measured, i.e. prescribed quantities of reagents
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
FR9512114A 1995-10-11 1995-10-11 Dispositif d'injection de gaz dans un reacteur de depot chimique en phase vapeur Expired - Fee Related FR2739871B1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR9512114A FR2739871B1 (fr) 1995-10-11 1995-10-11 Dispositif d'injection de gaz dans un reacteur de depot chimique en phase vapeur

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9512114A FR2739871B1 (fr) 1995-10-11 1995-10-11 Dispositif d'injection de gaz dans un reacteur de depot chimique en phase vapeur

Publications (2)

Publication Number Publication Date
FR2739871A1 FR2739871A1 (fr) 1997-04-18
FR2739871B1 true FR2739871B1 (fr) 1997-12-26

Family

ID=9483568

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9512114A Expired - Fee Related FR2739871B1 (fr) 1995-10-11 1995-10-11 Dispositif d'injection de gaz dans un reacteur de depot chimique en phase vapeur

Country Status (1)

Country Link
FR (1) FR2739871B1 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5891250A (en) * 1998-05-05 1999-04-06 Memc Electronic Materials, Inc. Injector for reactor

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5221556A (en) * 1987-06-24 1993-06-22 Epsilon Technology, Inc. Gas injectors for reaction chambers in CVD systems
WO1989012703A1 (fr) * 1988-06-22 1989-12-28 Asm Epitaxy, Inc. Appareil d'injection de gaz pour reacteurs de deposition en phase gazeuse par procede chimique
JPH02229788A (ja) * 1989-02-28 1990-09-12 Sumitomo Metal Ind Ltd 気相成長装置
JPH05291151A (ja) * 1992-04-15 1993-11-05 Fuji Electric Co Ltd 気相成長装置
JPH0677142A (ja) * 1992-08-25 1994-03-18 Fujitsu Ltd 気相成長装置
JP2790009B2 (ja) * 1992-12-11 1998-08-27 信越半導体株式会社 シリコンエピタキシャル層の成長方法および成長装置
US5551982A (en) * 1994-03-31 1996-09-03 Applied Materials, Inc. Semiconductor wafer process chamber with susceptor back coating

Also Published As

Publication number Publication date
FR2739871A1 (fr) 1997-04-18

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Legal Events

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ST Notification of lapse