DE3883809D1 - Direkt-Temperaturkontrolle eines Wafers. - Google Patents
Direkt-Temperaturkontrolle eines Wafers.Info
- Publication number
- DE3883809D1 DE3883809D1 DE88102173T DE3883809T DE3883809D1 DE 3883809 D1 DE3883809 D1 DE 3883809D1 DE 88102173 T DE88102173 T DE 88102173T DE 3883809 T DE3883809 T DE 3883809T DE 3883809 D1 DE3883809 D1 DE 3883809D1
- Authority
- DE
- Germany
- Prior art keywords
- wafer
- temperature control
- direct temperature
- direct
- control
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K1/00—Details of thermometers not specially adapted for particular types of thermometer
- G01K1/14—Supports; Fastening devices; Arrangements for mounting thermometers in particular locations
- G01K1/143—Supports; Fastening devices; Arrangements for mounting thermometers in particular locations for measuring surface temperatures
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Chemical Vapour Deposition (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US07/020,278 US4788416A (en) | 1987-03-02 | 1987-03-02 | Direct wafer temperature control |
Publications (2)
Publication Number | Publication Date |
---|---|
DE3883809D1 true DE3883809D1 (de) | 1993-10-14 |
DE3883809T2 DE3883809T2 (de) | 1994-04-14 |
Family
ID=21797716
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE88102173T Expired - Fee Related DE3883809T2 (de) | 1987-03-02 | 1988-02-15 | Direkt-Temperaturkontrolle eines Wafers. |
Country Status (4)
Country | Link |
---|---|
US (1) | US4788416A (de) |
EP (1) | EP0280952B1 (de) |
JP (1) | JP2563440B2 (de) |
DE (1) | DE3883809T2 (de) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5136978A (en) * | 1989-10-30 | 1992-08-11 | The United States Of America As Represented By The Secretary Of The Air Force | Heat pipe susceptor for epitaxy |
DE69111493T2 (de) * | 1990-03-12 | 1996-03-21 | Ngk Insulators Ltd | Wafer-Heizgeräte für Apparate, zur Halbleiterherstellung Heizanlage mit diesen Heizgeräten und Herstellung von Heizgeräten. |
US5016332A (en) * | 1990-04-13 | 1991-05-21 | Branson International Plasma Corporation | Plasma reactor and process with wafer temperature control |
US5536918A (en) * | 1991-08-16 | 1996-07-16 | Tokyo Electron Sagami Kabushiki Kaisha | Heat treatment apparatus utilizing flat heating elements for treating semiconductor wafers |
JP2984060B2 (ja) * | 1994-09-01 | 1999-11-29 | センサレー・コーポレーション | 測温基板 |
US6084215A (en) * | 1997-11-05 | 2000-07-04 | Tokyo Electron Limited | Semiconductor wafer holder with spring-mounted temperature measurement apparatus disposed therein |
CA2574116A1 (en) * | 2004-07-23 | 2006-01-26 | Intellectual Property Bank Corp. | Stage for holding silicon wafer substrate and method for measuring temperature of silicon wafer substrate |
JP4998333B2 (ja) * | 2008-03-08 | 2012-08-15 | 東京エレクトロン株式会社 | 温度測定装置、載置台構造及び熱処理装置 |
JP2014033148A (ja) * | 2012-08-06 | 2014-02-20 | Ulvac Japan Ltd | 光照射装置 |
JP6513285B2 (ja) * | 2016-03-28 | 2019-05-15 | 株式会社Kokusai Electric | 基板処理装置及び半導体装置の製造方法 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3051813A (en) * | 1960-08-24 | 1962-08-28 | Gen Electric | Temperature control systems |
US3754118A (en) * | 1971-02-12 | 1973-08-21 | A Booker | Flexible immersion heater |
DE2414888C2 (de) * | 1974-03-27 | 1983-08-25 | Siemens AG, 1000 Berlin und 8000 München | Einrichtung zur Temperaturmessung |
US4632056A (en) * | 1985-08-05 | 1986-12-30 | Stitz Robert W | CVD temperature control |
-
1987
- 1987-03-02 US US07/020,278 patent/US4788416A/en not_active Expired - Lifetime
-
1988
- 1988-02-15 DE DE88102173T patent/DE3883809T2/de not_active Expired - Fee Related
- 1988-02-15 EP EP88102173A patent/EP0280952B1/de not_active Expired - Lifetime
- 1988-02-23 JP JP63038789A patent/JP2563440B2/ja not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0280952A3 (en) | 1990-03-21 |
US4788416A (en) | 1988-11-29 |
DE3883809T2 (de) | 1994-04-14 |
JPS63227013A (ja) | 1988-09-21 |
EP0280952B1 (de) | 1993-09-08 |
EP0280952A2 (de) | 1988-09-07 |
JP2563440B2 (ja) | 1996-12-11 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE3772812D1 (de) | Selbsteinstellender regler. | |
KR900008635A (ko) | 반도체 웨이퍼의 흐림 방지장치 | |
DE68914479D1 (de) | Randbelichtungsverfahren für Halbleiterscheiben. | |
KR860700182A (ko) | 웨이퍼 가공용필름 | |
NO171006C (no) | Fremgangsmaate for fremstilling av antioksyderende preparater | |
NO861088L (no) | Harpikser til fremstilling av hurtigherdende klebemidler for laminering av tre. | |
KR880701459A (ko) | 실리콘 웨이퍼에 바이어스를 형성하기 위한 플래너공정 | |
NO165143C (no) | Fremgangsmaate til fremstilling av hydrokloridet av fenyl-1-dietylaminokarbonyl-1-aminometyl-2-cyklopropan (z). | |
DE68913481D1 (de) | Wafer-Positionierungsmechanismus für gekerbte Wafer. | |
DE3789393D1 (de) | Herstellungsverfahren von Halbleiter-Scheiben. | |
KR900008697A (ko) | 반도체 웨이퍼 제조방법 | |
DE3883809T2 (de) | Direkt-Temperaturkontrolle eines Wafers. | |
NO870177D0 (no) | Fremgangsmaate for fremstilling av et soetemiddel. | |
NO870409D0 (no) | Fremgangsmaate for spaltning av 1-aminoindaner. | |
DE68918799D1 (de) | Verbindungshalbleitersubstrat. | |
DK56387D0 (da) | Styreventil | |
DE3782625D1 (de) | Robotersteuerungsanordnung. | |
GB2115923B (en) | Semiconductor wafer alignment | |
DE3582104D1 (de) | Halbleiter-temperatursensor. | |
DE3668716D1 (de) | Halbleitersubstratvorspannungsgenerator. | |
DE68910873D1 (de) | Herstellungsverfahren von Halbleitervorrichtungen. | |
IT8821523A0 (it) | Apparecchio per raccogliere wafer | |
DE68907796T2 (de) | Anlage zur Beschichtung von Halbleiterscheiben. | |
DE3787367T2 (de) | Heizapparat für Halbleiter-Wafer. | |
KR900010046A (ko) | 기판온도 조절장치 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8327 | Change in the person/name/address of the patent owner |
Owner name: MATERIALS RESEARCH CORP., ORANGEBURG, N.Y., US |
|
8339 | Ceased/non-payment of the annual fee | ||
8327 | Change in the person/name/address of the patent owner |
Owner name: TOKYO ELECTRON LTD., TOKIO/TOKYO, JP |
|
8328 | Change in the person/name/address of the agent |
Free format text: EISENFUEHR, SPEISER & PARTNER, 28195 BREMEN |