DE3879461D1 - Verfahren zum musterartigen herstellen einer duennen schicht aus einem oxidisch supraleitenden material. - Google Patents

Verfahren zum musterartigen herstellen einer duennen schicht aus einem oxidisch supraleitenden material.

Info

Publication number
DE3879461D1
DE3879461D1 DE8888202842T DE3879461T DE3879461D1 DE 3879461 D1 DE3879461 D1 DE 3879461D1 DE 8888202842 T DE8888202842 T DE 8888202842T DE 3879461 T DE3879461 T DE 3879461T DE 3879461 D1 DE3879461 D1 DE 3879461D1
Authority
DE
Germany
Prior art keywords
supral
oxidic
pattern
producing
thin layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8888202842T
Other languages
English (en)
Other versions
DE3879461T2 (de
Inventor
Maritza Gerarda Joseph Heijman
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of DE3879461D1 publication Critical patent/DE3879461D1/de
Application granted granted Critical
Publication of DE3879461T2 publication Critical patent/DE3879461T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H10N60/0268—Manufacture or treatment of devices comprising copper oxide
    • H10N60/0661—Processes performed after copper oxide formation, e.g. patterning
    • H10N60/0688—Etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H10N60/0268—Manufacture or treatment of devices comprising copper oxide
    • H10N60/0744—Manufacture or deposition of electrodes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00—Superconductor technology: apparatus, material, process
    • Y10S505/725—Process of making or treating high tc, above 30 k, superconducting shaped material, article, or device
    • Y10S505/728—Etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Superconductor Devices And Manufacturing Methods Thereof (AREA)
  • Superconductors And Manufacturing Methods Therefor (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • ing And Chemical Polishing (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
DE8888202842T 1987-12-16 1988-12-12 Verfahren zum musterartigen herstellen einer duennen schicht aus einem oxidisch supraleitenden material. Expired - Fee Related DE3879461T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL8703039A NL8703039A (nl) 1987-12-16 1987-12-16 Werkwijze voor het patroonmatig vervaardigen van een dunne laag uit een oxidisch supergeleidend materiaal.

Publications (2)

Publication Number Publication Date
DE3879461D1 true DE3879461D1 (de) 1993-04-22
DE3879461T2 DE3879461T2 (de) 1993-09-09

Family

ID=19851102

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8888202842T Expired - Fee Related DE3879461T2 (de) 1987-12-16 1988-12-12 Verfahren zum musterartigen herstellen einer duennen schicht aus einem oxidisch supraleitenden material.

Country Status (8)

Country Link
US (1) US4933318A (de)
EP (1) EP0324996B1 (de)
JP (1) JPH01214074A (de)
KR (1) KR890011124A (de)
CN (1) CN1034636A (de)
DE (1) DE3879461T2 (de)
NL (1) NL8703039A (de)
SU (1) SU1662361A3 (de)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01171246A (ja) * 1987-12-25 1989-07-06 Mitsubishi Metal Corp 超伝導体配線の形成方法
US5234633A (en) * 1987-12-28 1993-08-10 Canon Kabushiki Kaisha Cast molding die and process for producing information recording medium using the same
US5041188A (en) * 1989-03-02 1991-08-20 Santa Barbara Research Center High temperature superconductor detector fabrication process
KR930004024B1 (ko) * 1990-04-27 1993-05-19 삼성전기 주식회사 초전도 집적회로소자의 제조방법
US5173678A (en) * 1990-09-10 1992-12-22 Gte Laboratories Incorporated Formed-to-shape superconducting coil
CA2053549A1 (en) * 1990-11-15 1992-05-16 John A. Agostinelli Construction of high temperature josephson junction device
JPH0697522A (ja) * 1990-11-30 1994-04-08 Internatl Business Mach Corp <Ibm> 超伝導材料の薄膜の製造方法
DE4038894C1 (de) * 1990-12-06 1992-06-25 Dornier Gmbh, 7990 Friedrichshafen, De
US5212147A (en) * 1991-05-15 1993-05-18 Hewlett-Packard Company Method of forming a patterned in-situ high Tc superconductive film
DE4120766A1 (de) * 1991-06-24 1993-01-14 Forschungszentrum Juelich Gmbh Verfahren zur herstellung von strukturierten leiterbahnen
US5286336A (en) * 1991-07-23 1994-02-15 Trw Inc. Submicron Josephson junction and method for its fabrication
DE4127701C2 (de) * 1991-08-21 1995-11-30 Siemens Ag Verfahren zum Herstellen einer strukturierten Dünnschicht aus einem Hochtemperatursupraleiter und Vorrichtung zur Durchführung des Verfahrens
JPH05251777A (ja) * 1991-12-13 1993-09-28 Sumitomo Electric Ind Ltd 超電導電界効果型素子およびその作製方法
KR970052022A (ko) * 1995-12-30 1997-07-29 김주용 에스 오 아이 기판 제조방법
US6331680B1 (en) 1996-08-07 2001-12-18 Visteon Global Technologies, Inc. Multilayer electrical interconnection device and method of making same
US6001268A (en) * 1997-06-05 1999-12-14 International Business Machines Corporation Reactive ion etching of alumina/TiC substrates
DE19733391C2 (de) 1997-08-01 2001-08-16 Siemens Ag Strukturierungsverfahren
EP0907203A3 (de) * 1997-09-03 2000-07-12 Siemens Aktiengesellschaft Strukturierungsverfahren
US8852959B2 (en) * 2011-12-19 2014-10-07 Northrup Grumman Systems Corporation Low temperature resistor for superconductor circuits

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4657844A (en) * 1983-06-27 1987-04-14 Texas Instruments Incorporated Plasma developable negative resist compositions for electron beam, X-ray and optical lithography
JPH061769B2 (ja) * 1983-08-10 1994-01-05 株式会社日立製作所 アルミナ膜のパターニング方法
US4560435A (en) * 1984-10-01 1985-12-24 International Business Machines Corporation Composite back-etch/lift-off stencil for proximity effect minimization
US4683024A (en) * 1985-02-04 1987-07-28 American Telephone And Telegraph Company, At&T Bell Laboratories Device fabrication method using spin-on glass resins
US4702795A (en) * 1985-05-03 1987-10-27 Texas Instruments Incorporated Trench etch process
US4687543A (en) * 1986-02-21 1987-08-18 Tegal Corporation Selective plasma etching during formation of integrated circuitry

Also Published As

Publication number Publication date
US4933318A (en) 1990-06-12
EP0324996A1 (de) 1989-07-26
JPH01214074A (ja) 1989-08-28
KR890011124A (ko) 1989-08-12
DE3879461T2 (de) 1993-09-09
SU1662361A3 (ru) 1991-07-07
EP0324996B1 (de) 1993-03-17
CN1034636A (zh) 1989-08-09
NL8703039A (nl) 1989-07-17

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: PHILIPS ELECTRONICS N.V., EINDHOVEN, NL

8339 Ceased/non-payment of the annual fee