DE3873283D1 - Verfahren, um eine halbleitervorrichtung mit einem ungeordneten uebergitter herzustellen. - Google Patents

Verfahren, um eine halbleitervorrichtung mit einem ungeordneten uebergitter herzustellen.

Info

Publication number
DE3873283D1
DE3873283D1 DE8888311187T DE3873283T DE3873283D1 DE 3873283 D1 DE3873283 D1 DE 3873283D1 DE 8888311187 T DE8888311187 T DE 8888311187T DE 3873283 T DE3873283 T DE 3873283T DE 3873283 D1 DE3873283 D1 DE 3873283D1
Authority
DE
Germany
Prior art keywords
manufacturing
semiconductor device
disordered layer
disordered
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8888311187T
Other languages
English (en)
Other versions
DE3873283T2 (de
Inventor
Takashi C O Mitsubish Murakami
Kaname C O Mitsubishi De Otaki
Hisao C O Mitsubishi De Kumabe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of DE3873283D1 publication Critical patent/DE3873283D1/de
Application granted granted Critical
Publication of DE3873283T2 publication Critical patent/DE3873283T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/182—Intermixing or interdiffusion or disordering of III-V heterostructures, e.g. IILD
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/037—Diffusion-deposition
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/095—Laser devices

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Electromagnetism (AREA)
  • Geometry (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Computer Hardware Design (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Lasers (AREA)
DE8888311187T 1987-11-28 1988-11-25 Verfahren, um eine halbleitervorrichtung mit einem ungeordneten uebergitter herzustellen. Expired - Fee Related DE3873283T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62300974A JPH01143285A (ja) 1987-11-28 1987-11-28 半導体超格子の無秩序化方法及び半導体レーザ装置

Publications (2)

Publication Number Publication Date
DE3873283D1 true DE3873283D1 (de) 1992-09-03
DE3873283T2 DE3873283T2 (de) 1993-03-11

Family

ID=17891317

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8888311187T Expired - Fee Related DE3873283T2 (de) 1987-11-28 1988-11-25 Verfahren, um eine halbleitervorrichtung mit einem ungeordneten uebergitter herzustellen.

Country Status (4)

Country Link
US (1) US5108948A (de)
EP (1) EP0319207B1 (de)
JP (1) JPH01143285A (de)
DE (1) DE3873283T2 (de)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03126283A (ja) * 1989-10-11 1991-05-29 Toshiba Corp 窓構造半導体レーザ素子の製造方法
US5070510A (en) * 1989-12-12 1991-12-03 Sharp Kabushiki Kaisha Semiconductor laser device
JPH04199507A (ja) * 1990-11-28 1992-07-20 Mitsubishi Electric Corp ３―Ｖ族化合物半導体へのｎ型不純物固相拡散方法
US5225368A (en) * 1991-02-08 1993-07-06 The United States Of America As Represented By The United States Department Of Energy Method of producing strained-layer semiconductor devices via subsurface-patterning
JPH0582463A (ja) * 1991-03-25 1993-04-02 Mitsubishi Electric Corp Ｐ形不純物の拡散方法及び半導体レーザ
US5137842A (en) * 1991-05-10 1992-08-11 Micron Technology, Inc. Stacked H-cell capacitor and process to fabricate same
US5208823A (en) * 1991-09-03 1993-05-04 Applied Solar Energy Corporation Optically isolated laser diode array
US5192709A (en) * 1991-09-17 1993-03-09 University Of California Office Of Technology Transfer Nanoscale modulation doping method
JPH0613314A (ja) * 1992-06-24 1994-01-21 Matsushita Electric Ind Co Ltd 半導体エピタキシャル成長方法
US5376582A (en) * 1993-10-15 1994-12-27 International Business Machines Corporation Planar, topology-free, single-mode, high-power semiconductor quantum-well laser with non-absorbing mirrors and current confinement
FR2718576B1 (fr) * 1994-04-06 1996-04-26 Alcatel Nv Procédé de décalage de longueur d'onde dans une structure semiconductrice à puits quantique.
US5653801A (en) * 1995-04-06 1997-08-05 University Of Maryland Baltimore County Method for reducing contamination in semiconductor by selenium doping
EP0844651A1 (de) * 1996-11-26 1998-05-27 Xerox Corporation Verfahren zum Kontrollieren der Oxidation in Halbleiter-Mehrschichtstrukturen mit Gruppe III Elementen
SE511314C2 (sv) * 1997-02-07 1999-09-06 Ericsson Telefon Ab L M Framställning av heterobipolär transistor och laserdiod på samma substrat
JP4592865B2 (ja) * 1999-04-08 2010-12-08 古河電気工業株式会社 半導体積層構造の製造方法
JP3501676B2 (ja) * 1999-05-07 2004-03-02 松下電器産業株式会社 半導体レーザ装置の製造方法
JP3738245B2 (ja) 2002-10-02 2006-01-25 株式会社リコー 低電圧動作モードを備える演算部の電源及び上記演算部への給電制御方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59202677A (ja) * 1983-05-04 1984-11-16 Agency Of Ind Science & Technol 半導体レ−ザ装置
US4731789A (en) * 1985-05-13 1988-03-15 Xerox Corporation Clad superlattice semiconductor laser
US4706255A (en) * 1985-05-20 1987-11-10 Xerox Corporation Phased array semiconductor laser with preferred emission in the fundamental supermode
US4654090A (en) * 1985-09-13 1987-03-31 Xerox Corporation Selective disordering of well structures by laser annealing
JPS62173792A (ja) * 1986-01-21 1987-07-30 ゼロツクス　コ−ポレ−シヨン 半導体構造体及びその半導体領域変換方法
JPH07112091B2 (ja) * 1986-03-06 1995-11-29 株式会社東芝 埋め込み型半導体レ−ザの製造方法
US4771010A (en) * 1986-11-21 1988-09-13 Xerox Corporation Energy beam induced layer disordering (EBILD)
US4830983A (en) * 1987-11-05 1989-05-16 Xerox Corporation Method of enhanced introduction of impurity species into a semiconductor structure from a deposited source and application thereof
US4824798A (en) * 1987-11-05 1989-04-25 Xerox Corporation Method of introducing impurity species into a semiconductor structure from a deposited source

Also Published As

Publication number Publication date
US5108948A (en) 1992-04-28
DE3873283T2 (de) 1993-03-11
EP0319207A2 (de) 1989-06-07
EP0319207B1 (de) 1992-07-29
JPH01143285A (ja) 1989-06-05
EP0319207A3 (en) 1989-09-06

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)
8339 Ceased/non-payment of the annual fee