DE3873028D1 - Verfahren zum selektiven abscheiden eines silicids eines hochschmelzenden metalls auf freiliegenden siliciumzonen. - Google Patents
Verfahren zum selektiven abscheiden eines silicids eines hochschmelzenden metalls auf freiliegenden siliciumzonen.Info
- Publication number
- DE3873028D1 DE3873028D1 DE8888420373T DE3873028T DE3873028D1 DE 3873028 D1 DE3873028 D1 DE 3873028D1 DE 8888420373 T DE8888420373 T DE 8888420373T DE 3873028 T DE3873028 T DE 3873028T DE 3873028 D1 DE3873028 D1 DE 3873028D1
- Authority
- DE
- Germany
- Prior art keywords
- wafer
- psixhy
- pme
- silicide
- metal silicide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 229910021332 silicide Inorganic materials 0.000 title abstract 4
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 title abstract 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title abstract 3
- 229910052710 silicon Inorganic materials 0.000 title abstract 3
- 239000010703 silicon Substances 0.000 title abstract 3
- 238000000151 deposition Methods 0.000 title 1
- 238000002844 melting Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 239000002184 metal Substances 0.000 abstract 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 230000008021 deposition Effects 0.000 abstract 2
- 238000010438 heat treatment Methods 0.000 abstract 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 239000002131 composite material Substances 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 238000005137 deposition process Methods 0.000 abstract 1
- 239000003870 refractory metal Substances 0.000 abstract 1
- 229910000077 silane Inorganic materials 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/42—Silicides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28518—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising silicides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
- H01L21/76879—Filling of holes, grooves or trenches, e.g. vias, with conductive material by selective deposition of conductive material in the vias, e.g. selective C.V.D. on semiconductor material, plating
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/147—Silicides
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Mechanical Engineering (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Inorganic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR8715885A FR2623014B1 (fr) | 1987-11-09 | 1987-11-09 | Procede de depot selectif d'un siliciure de metal refractaire sur des zones de silicium |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE3873028D1 true DE3873028D1 (de) | 1992-08-27 |
| DE3873028T2 DE3873028T2 (de) | 1993-03-04 |
Family
ID=9356878
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE8888420373T Expired - Fee Related DE3873028T2 (de) | 1987-11-09 | 1988-11-07 | Verfahren zum selektiven abscheiden eines silicids eines hochschmelzenden metalls auf freiliegenden siliciumzonen. |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US4871691A (de) |
| EP (1) | EP0316243B1 (de) |
| AT (1) | ATE78633T1 (de) |
| DE (1) | DE3873028T2 (de) |
| FR (1) | FR2623014B1 (de) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6387781B1 (en) * | 1990-05-18 | 2002-05-14 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Method of forming three-dimensional semiconductors structures |
| US5652180A (en) * | 1993-06-28 | 1997-07-29 | Kawasaki Steel Corporation | Method of manufacturing semiconductor device with contact structure |
| JPH08191054A (ja) * | 1995-01-10 | 1996-07-23 | Kawasaki Steel Corp | 半導体装置及びその製造方法 |
| US6001729A (en) * | 1995-01-10 | 1999-12-14 | Kawasaki Steel Corporation | Method of forming wiring structure for semiconductor device |
| FR2742924B1 (fr) | 1995-12-22 | 1998-03-20 | Jorge Luis Regolini | Procede de depot selectif d'un siliciure de metal refractaire sur du silicium et plaquette de silicium metallisee par ce procede |
| US6602796B2 (en) * | 1998-09-03 | 2003-08-05 | Micron Technology, Inc. | Chemical vapor deposition for smooth metal films |
| US11124874B2 (en) * | 2018-10-25 | 2021-09-21 | Applied Materials, Inc. | Methods for depositing metallic iridium and iridium silicide |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56574A (en) * | 1979-06-13 | 1981-01-07 | Sawafuji Electric Co Ltd | Oscillation type compressor |
| DE3211752C2 (de) * | 1982-03-30 | 1985-09-26 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum selektiven Abscheiden von aus Siliziden hochschmelzender Metalle bestehenden Schichtstrukturen auf im wesentlichen aus Silizium bestehenden Substraten und deren Verwendung |
| JPS5956574A (ja) * | 1982-09-24 | 1984-04-02 | Fujitsu Ltd | チタン・シリサイド膜の形成方法 |
| US4557943A (en) * | 1983-10-31 | 1985-12-10 | Advanced Semiconductor Materials America, Inc. | Metal-silicide deposition using plasma-enhanced chemical vapor deposition |
| US4568565A (en) * | 1984-05-14 | 1986-02-04 | Allied Corporation | Light induced chemical vapor deposition of conductive titanium silicide films |
| US4668530A (en) * | 1985-07-23 | 1987-05-26 | Massachusetts Institute Of Technology | Low pressure chemical vapor deposition of refractory metal silicides |
| US4619038A (en) * | 1985-08-15 | 1986-10-28 | Motorola, Inc. | Selective titanium silicide formation |
| FR2589887B1 (fr) * | 1985-11-14 | 1988-10-07 | Semy Engineering | Procede et reacteur de depot de couches de siliciure |
| US4766006A (en) * | 1986-05-15 | 1988-08-23 | Varian Associates, Inc. | Low pressure chemical vapor deposition of metal silicide |
| JPH109172A (ja) * | 1996-06-19 | 1998-01-13 | Hitachi Ltd | 密閉形圧縮機 |
-
1987
- 1987-11-09 FR FR8715885A patent/FR2623014B1/fr not_active Expired - Lifetime
-
1988
- 1988-11-07 DE DE8888420373T patent/DE3873028T2/de not_active Expired - Fee Related
- 1988-11-07 EP EP88420373A patent/EP0316243B1/de not_active Expired - Lifetime
- 1988-11-07 AT AT88420373T patent/ATE78633T1/de not_active IP Right Cessation
- 1988-11-08 US US07/269,754 patent/US4871691A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| US4871691A (en) | 1989-10-03 |
| FR2623014B1 (fr) | 1990-03-23 |
| FR2623014A1 (fr) | 1989-05-12 |
| EP0316243B1 (de) | 1992-07-22 |
| ATE78633T1 (de) | 1992-08-15 |
| EP0316243A1 (de) | 1989-05-17 |
| DE3873028T2 (de) | 1993-03-04 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8380 | Miscellaneous part iii |
Free format text: DIE PATENTINHABER LAUTEN RICHTIG: FRANCE TELECOM CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE (C.N.R.S.), PARIS, FR |
|
| 8364 | No opposition during term of opposition | ||
| 8339 | Ceased/non-payment of the annual fee |