TW278218B - High-stable producing process of metal diffusion barrier layer - Google Patents
High-stable producing process of metal diffusion barrier layerInfo
- Publication number
- TW278218B TW278218B TW83103955A TW83103955A TW278218B TW 278218 B TW278218 B TW 278218B TW 83103955 A TW83103955 A TW 83103955A TW 83103955 A TW83103955 A TW 83103955A TW 278218 B TW278218 B TW 278218B
- Authority
- TW
- Taiwan
- Prior art keywords
- substrate
- diffusion barrier
- barrier layer
- temperature
- metal diffusion
- Prior art date
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
Abstract
A high-stable producing process of metal diffusion barrier layer, comprising the steps of: tto process the substrate deposited with Ti layer by rapid thermal process, RTP in an environment of NH3 or N2 at the temperature of 580 deg.C to 630 deg.C in order to form TiN layer; to eliminate the TiOx compound formed between the TiN layer and the substrate by RTP in NH3 or N2 at the temperature of 800 deg.C to 900 deg.C and to form silicide of low-resistance on the surface of Si substrate; and to temper the substrate in NH3 or N2 at the temperature of 600 deg.C to 750 deg.C as to eliminate the system stress caused by earlier thermal processes; whereby the above three processes, the adhesive capability of TiN to the substrate is enhanced and the system stress existed on the contact zone is also decreased so that the yield and the leakage of junction current can be improved as a result.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW83103955A TW278218B (en) | 1994-05-02 | 1994-05-02 | High-stable producing process of metal diffusion barrier layer |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW83103955A TW278218B (en) | 1994-05-02 | 1994-05-02 | High-stable producing process of metal diffusion barrier layer |
Publications (1)
Publication Number | Publication Date |
---|---|
TW278218B true TW278218B (en) | 1996-06-11 |
Family
ID=51397446
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW83103955A TW278218B (en) | 1994-05-02 | 1994-05-02 | High-stable producing process of metal diffusion barrier layer |
Country Status (1)
Country | Link |
---|---|
TW (1) | TW278218B (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5911857A (en) * | 1996-06-27 | 1999-06-15 | Hyundai Electronics Industries Co., Ltd. | Method for forming metal wiring of semiconductor devices |
CN106756726A (en) * | 2016-11-24 | 2017-05-31 | 江苏雨燕模业科技有限公司 | A kind of automobile die surface Hardening Treatment technique |
-
1994
- 1994-05-02 TW TW83103955A patent/TW278218B/en active
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5911857A (en) * | 1996-06-27 | 1999-06-15 | Hyundai Electronics Industries Co., Ltd. | Method for forming metal wiring of semiconductor devices |
CN106756726A (en) * | 2016-11-24 | 2017-05-31 | 江苏雨燕模业科技有限公司 | A kind of automobile die surface Hardening Treatment technique |
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