ATE78633T1 - Verfahren zum selektiven abscheiden eines silicids eines hochschmelzenden metalls auf freiliegenden siliciumzonen. - Google Patents

Verfahren zum selektiven abscheiden eines silicids eines hochschmelzenden metalls auf freiliegenden siliciumzonen.

Info

Publication number
ATE78633T1
ATE78633T1 AT88420373T AT88420373T ATE78633T1 AT E78633 T1 ATE78633 T1 AT E78633T1 AT 88420373 T AT88420373 T AT 88420373T AT 88420373 T AT88420373 T AT 88420373T AT E78633 T1 ATE78633 T1 AT E78633T1
Authority
AT
Austria
Prior art keywords
wafer
silicon
psixhy
pme
selective deposition
Prior art date
Application number
AT88420373T
Other languages
English (en)
Inventor
Joaquim Torres
Roland Madar
Claude Bernard
Jean-Francois Million-Brodaz
Original Assignee
France Etat
Centre Nat Rech Scient
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by France Etat, Centre Nat Rech Scient filed Critical France Etat
Application granted granted Critical
Publication of ATE78633T1 publication Critical patent/ATE78633T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/42—Silicides
    • H10D64/0112—
    • H10W20/057—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/147—Silicides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
AT88420373T 1987-11-09 1988-11-07 Verfahren zum selektiven abscheiden eines silicids eines hochschmelzenden metalls auf freiliegenden siliciumzonen. ATE78633T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR8715885A FR2623014B1 (fr) 1987-11-09 1987-11-09 Procede de depot selectif d'un siliciure de metal refractaire sur des zones de silicium
EP88420373A EP0316243B1 (de) 1987-11-09 1988-11-07 Verfahren zum selektiven Abscheiden eines Silicids eines hochschmelzenden Metalls auf freiliegenden Siliciumzonen

Publications (1)

Publication Number Publication Date
ATE78633T1 true ATE78633T1 (de) 1992-08-15

Family

ID=9356878

Family Applications (1)

Application Number Title Priority Date Filing Date
AT88420373T ATE78633T1 (de) 1987-11-09 1988-11-07 Verfahren zum selektiven abscheiden eines silicids eines hochschmelzenden metalls auf freiliegenden siliciumzonen.

Country Status (5)

Country Link
US (1) US4871691A (de)
EP (1) EP0316243B1 (de)
AT (1) ATE78633T1 (de)
DE (1) DE3873028T2 (de)
FR (1) FR2623014B1 (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6387781B1 (en) * 1990-05-18 2002-05-14 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Method of forming three-dimensional semiconductors structures
US5652180A (en) * 1993-06-28 1997-07-29 Kawasaki Steel Corporation Method of manufacturing semiconductor device with contact structure
JPH08191054A (ja) * 1995-01-10 1996-07-23 Kawasaki Steel Corp 半導体装置及びその製造方法
US6001729A (en) * 1995-01-10 1999-12-14 Kawasaki Steel Corporation Method of forming wiring structure for semiconductor device
FR2742924B1 (fr) 1995-12-22 1998-03-20 Jorge Luis Regolini Procede de depot selectif d'un siliciure de metal refractaire sur du silicium et plaquette de silicium metallisee par ce procede
US6602796B2 (en) * 1998-09-03 2003-08-05 Micron Technology, Inc. Chemical vapor deposition for smooth metal films
WO2020086175A1 (en) * 2018-10-25 2020-04-30 Applied Materials, Inc. Methods for depositing metallic iridium and iridium silicide

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56574A (en) * 1979-06-13 1981-01-07 Sawafuji Electric Co Ltd Oscillation type compressor
DE3211752C2 (de) * 1982-03-30 1985-09-26 Siemens AG, 1000 Berlin und 8000 München Verfahren zum selektiven Abscheiden von aus Siliziden hochschmelzender Metalle bestehenden Schichtstrukturen auf im wesentlichen aus Silizium bestehenden Substraten und deren Verwendung
JPS5956574A (ja) * 1982-09-24 1984-04-02 Fujitsu Ltd チタン・シリサイド膜の形成方法
US4557943A (en) * 1983-10-31 1985-12-10 Advanced Semiconductor Materials America, Inc. Metal-silicide deposition using plasma-enhanced chemical vapor deposition
US4568565A (en) * 1984-05-14 1986-02-04 Allied Corporation Light induced chemical vapor deposition of conductive titanium silicide films
US4668530A (en) * 1985-07-23 1987-05-26 Massachusetts Institute Of Technology Low pressure chemical vapor deposition of refractory metal silicides
US4619038A (en) * 1985-08-15 1986-10-28 Motorola, Inc. Selective titanium silicide formation
FR2589887B1 (fr) * 1985-11-14 1988-10-07 Semy Engineering Procede et reacteur de depot de couches de siliciure
US4766006A (en) * 1986-05-15 1988-08-23 Varian Associates, Inc. Low pressure chemical vapor deposition of metal silicide
JPH109172A (ja) * 1996-06-19 1998-01-13 Hitachi Ltd 密閉形圧縮機

Also Published As

Publication number Publication date
EP0316243A1 (de) 1989-05-17
US4871691A (en) 1989-10-03
FR2623014A1 (fr) 1989-05-12
EP0316243B1 (de) 1992-07-22
DE3873028T2 (de) 1993-03-04
FR2623014B1 (fr) 1990-03-23
DE3873028D1 (de) 1992-08-27

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Legal Events

Date Code Title Description
EEIH Change in the person of patent owner
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties