DE3871550T2 - Herstellungsverfahren fuer absolutdruckwandlereinheiten mit halbleitern. - Google Patents

Herstellungsverfahren fuer absolutdruckwandlereinheiten mit halbleitern.

Info

Publication number
DE3871550T2
DE3871550T2 DE8888101609T DE3871550T DE3871550T2 DE 3871550 T2 DE3871550 T2 DE 3871550T2 DE 8888101609 T DE8888101609 T DE 8888101609T DE 3871550 T DE3871550 T DE 3871550T DE 3871550 T2 DE3871550 T2 DE 3871550T2
Authority
DE
Germany
Prior art keywords
semiconductors
manufacturing
pressure transducer
absolute pressure
transducer units
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8888101609T
Other languages
English (en)
Other versions
DE3871550D1 (de
Inventor
Shigeyuki Kobori
Kazuji Yamada
Ryoichi Kobayashi
Atsushi Miyazaki
Seikou Suzuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of DE3871550D1 publication Critical patent/DE3871550D1/de
Application granted granted Critical
Publication of DE3871550T2 publication Critical patent/DE3871550T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N39/00—Integrated devices, or assemblies of multiple devices, comprising at least one piezoelectric, electrostrictive or magnetostrictive element covered by groups H10N30/00 – H10N35/00
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0042—Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/84—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of applied mechanical force, e.g. of pressure
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49082—Resistor making
    • Y10T29/49103—Strain gauge making

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Measuring Fluid Pressure (AREA)
  • Pressure Sensors (AREA)
DE8888101609T 1987-03-06 1988-02-04 Herstellungsverfahren fuer absolutdruckwandlereinheiten mit halbleitern. Expired - Lifetime DE3871550T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62049981A JPH0810170B2 (ja) 1987-03-06 1987-03-06 半導体絶対圧力センサの製造方法

Publications (2)

Publication Number Publication Date
DE3871550D1 DE3871550D1 (de) 1992-07-09
DE3871550T2 true DE3871550T2 (de) 1992-12-03

Family

ID=12846193

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8888101609T Expired - Lifetime DE3871550T2 (de) 1987-03-06 1988-02-04 Herstellungsverfahren fuer absolutdruckwandlereinheiten mit halbleitern.

Country Status (5)

Country Link
US (1) US4802952A (de)
EP (1) EP0280905B1 (de)
JP (1) JPH0810170B2 (de)
KR (1) KR910010061B1 (de)
DE (1) DE3871550T2 (de)

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DE3943859B4 (de) * 1988-06-08 2005-04-21 Denso Corp., Kariya Verfahren zur Herstellung eines Halbleiterdrucksensors
US4905575A (en) * 1988-10-20 1990-03-06 Rosemount Inc. Solid state differential pressure sensor with overpressure stop and free edge construction
US4889590A (en) * 1989-04-27 1989-12-26 Motorola Inc. Semiconductor pressure sensor means and method
US5184515A (en) * 1989-06-22 1993-02-09 Ic Sensors, Inc. Single diaphragm transducer with multiple sensing elements
DE4006108A1 (de) * 1990-02-27 1991-08-29 Bosch Gmbh Robert Verfahren zum aufbau von mikromechanischen bauelementen in dickschichttechnik
US5225373A (en) * 1990-03-07 1993-07-06 Mitsubishi Denki Kabushiki Kaisha Method of manufacturing semiconductor pressure sensor device with two semiconductor pressure sensor chips
US5049232A (en) * 1990-08-31 1991-09-17 General Electric Company Method of making diaphragm-type pressure transducers
US5155061A (en) * 1991-06-03 1992-10-13 Allied-Signal Inc. Method for fabricating a silicon pressure sensor incorporating silicon-on-insulator structures
US5421956A (en) * 1991-11-20 1995-06-06 Nippondenso Co., Ltd. Method of fabricating an integrated pressure sensor
DE4239132C2 (de) * 1991-11-20 2002-06-06 Denso Corp Verfahren zum Fabrizieren eines integrierten Drucksensors
US5323051A (en) * 1991-12-16 1994-06-21 Motorola, Inc. Semiconductor wafer level package
US5285690A (en) * 1992-01-24 1994-02-15 The Foxboro Company Pressure sensor having a laminated substrate
US5507090A (en) * 1994-07-20 1996-04-16 Thiokol Corporation Method for making stress sensors
US5591679A (en) * 1995-04-12 1997-01-07 Sensonor A/S Sealed cavity arrangement method
JP3613838B2 (ja) * 1995-05-18 2005-01-26 株式会社デンソー 半導体装置の製造方法
US5578224A (en) * 1995-06-07 1996-11-26 Analog Devices, Inc. Method of making micromachined device with ground plane under sensor
US5600071A (en) * 1995-09-05 1997-02-04 Motorola, Inc. Vertically integrated sensor structure and method
JPH09222372A (ja) * 1996-02-19 1997-08-26 Mitsubishi Electric Corp 半導体式センサ
US5866469A (en) * 1996-06-13 1999-02-02 Boeing North American, Inc. Method of anodic wafer bonding
US5604160A (en) * 1996-07-29 1997-02-18 Motorola, Inc. Method for packaging semiconductor devices
DE19700734B4 (de) * 1997-01-11 2006-06-01 Robert Bosch Gmbh Verfahren zur Herstellung von Sensoren sowie nicht-vereinzelter Waferstapel
DE19800574B4 (de) * 1998-01-09 2013-11-14 Robert Bosch Gmbh Mikromechanisches Bauelement
DE19810756A1 (de) * 1998-03-12 1999-09-23 Fraunhofer Ges Forschung Sensoranordnung zur Messung von Druck, Kraft oder Meßgrößen, die sich auf Druck oder Kraft zurückführen lassen, Verfahren zur Herstellung der Sensoranordnung, Sensorelement und Verfahren zur Herstellung des Sensorelements
US6232150B1 (en) 1998-12-03 2001-05-15 The Regents Of The University Of Michigan Process for making microstructures and microstructures made thereby
US6229190B1 (en) * 1998-12-18 2001-05-08 Maxim Integrated Products, Inc. Compensated semiconductor pressure sensor
US6514789B2 (en) * 1999-10-26 2003-02-04 Motorola, Inc. Component and method for manufacture
US6401545B1 (en) 2000-01-25 2002-06-11 Motorola, Inc. Micro electro-mechanical system sensor with selective encapsulation and method therefor
DE10035564B4 (de) * 2000-07-21 2006-03-30 Conti Temic Microelectronic Gmbh Mikromechanisches Gehäuse
US7345316B2 (en) * 2000-10-25 2008-03-18 Shipley Company, L.L.C. Wafer level packaging for optoelectronic devices
US6564642B1 (en) 2000-11-02 2003-05-20 Kavlico Corporation Stable differential pressure measuring system
US6932519B2 (en) 2000-11-16 2005-08-23 Shipley Company, L.L.C. Optical device package
US6827503B2 (en) * 2000-12-01 2004-12-07 Shipley Company, L.L.C. Optical device package having a configured frame
US6475326B2 (en) * 2000-12-13 2002-11-05 Applied Materials, Inc. Anodic bonding of a stack of conductive and glass layers
US6883977B2 (en) * 2000-12-14 2005-04-26 Shipley Company, L.L.C. Optical device package for flip-chip mounting
AUPR244801A0 (en) * 2001-01-10 2001-02-01 Silverbrook Research Pty Ltd A method and apparatus (WSM01)
US6581468B2 (en) 2001-03-22 2003-06-24 Kavlico Corporation Independent-excitation cross-coupled differential-pressure transducer
DE10129821C2 (de) * 2001-06-13 2003-06-18 X Fab Semiconductor Foundries Verfahren zum Passivieren anodischer Bondgebiete, die über elektrisch aktiven Strukturen von mikroelektromechanischen Systemen angeordnet sind (Microelectromechnical System: MEMS)
US6769319B2 (en) 2001-07-09 2004-08-03 Freescale Semiconductor, Inc. Component having a filter
US6548321B1 (en) * 2001-10-23 2003-04-15 The Charles Stark Draper Laboratory, Inc. Method of anodically bonding a multilayer device with a free mass
WO2003031912A2 (en) 2001-10-05 2003-04-17 The Charles Stark Draper Laboratory, Inc. Tuning fork gyroscope
US6608370B1 (en) * 2002-01-28 2003-08-19 Motorola, Inc. Semiconductor wafer having a thin die and tethers and methods of making the same
US6617686B2 (en) * 2002-02-08 2003-09-09 Robert B. Davies Semiconductor device and method of isolating circuit regions
JP2005528782A (ja) * 2002-04-15 2005-09-22 ショット アーゲー 基板およびコンポジット要素の接続方法
TW569407B (en) * 2002-05-17 2004-01-01 Advanced Semiconductor Eng Wafer-level package with bump and method for manufacturing the same
DE10232190A1 (de) * 2002-07-16 2004-02-05 Austriamicrosystems Ag Verfahren zur Herstellung eines Bauelements mit tiefliegenden Anschlußflächen
DE10322751B3 (de) * 2003-05-19 2004-09-30 X-Fab Semiconductor Foundries Ag Verfahren zur Herstellung eines in Kunststoff verschlossenen optoelektronischen Bauelementes
US7089798B2 (en) * 2004-10-18 2006-08-15 Silverbrook Research Pty Ltd Pressure sensor with thin membrane
US7300814B2 (en) 2004-12-16 2007-11-27 The Charles Stark Draper Laboratory, Inc. Method for fabricating micro-mechanical devices
US7302848B2 (en) 2005-03-10 2007-12-04 The Charles Stark Draper Laboratory, Inc. Force compensated comb drive
US20060214266A1 (en) * 2005-03-23 2006-09-28 Jordan Larry L Bevel dicing semiconductor components
DE102005016751B3 (de) * 2005-04-11 2006-12-14 Schott Ag Verfahren zur Herstellung gehäuster elektronischer Bauelemente
US20060258051A1 (en) * 2005-05-10 2006-11-16 Texas Instruments Incorporated Method and system for solder die attach
US7622782B2 (en) * 2005-08-24 2009-11-24 General Electric Company Pressure sensors and methods of making the same
US7258018B2 (en) * 2005-10-26 2007-08-21 Kulite Semiconductor Products, Inc. High accuracy, high temperature, redundant media protected differential transducers
TWI286383B (en) * 2005-12-23 2007-09-01 Delta Electronics Inc Semiconductor piezoresistive sensor and operation method thereof
JP4675973B2 (ja) * 2005-12-26 2011-04-27 京セラ株式会社 微小電子機械装置およびその製造方法ならびに配線基板
US20080164598A1 (en) * 2007-01-08 2008-07-10 Horst Theuss Semiconductor module
DE102007001290A1 (de) * 2007-01-08 2008-07-10 Infineon Technologies Ag Halbleitermodul
KR101411416B1 (ko) * 2007-12-14 2014-06-26 삼성전자주식회사 마이크로 스피커 제조방법 및 이 방법에 의해 제조된마이크로 스피커
US8187902B2 (en) 2008-07-09 2012-05-29 The Charles Stark Draper Laboratory, Inc. High performance sensors and methods for forming the same
DE102013209385A1 (de) 2013-05-22 2014-11-27 Robert Bosch Gmbh Mikromechanische Differenzdrucksensorvorrichtung, entsprechendes Herstellungsverfahren und Differenzdrucksensoranordnung
TWI569427B (zh) * 2014-10-22 2017-02-01 精材科技股份有限公司 半導體封裝件及其製法
DE102018125378B3 (de) * 2018-10-14 2019-11-07 X-Fab Semiconductor Foundries Gmbh Anodisches Bonden eines Glassubstrats mit Kontaktdurchführungen an ein Siliziumsubstrat
CN109580077B (zh) * 2018-12-06 2020-07-28 中国科学院苏州纳米技术与纳米仿生研究所南昌研究院 压力传感器结构及其制作方法
CN111023529B (zh) * 2019-12-12 2020-12-25 深圳市金广电器有限公司 一种应用于空调制冷设备中的快速反应压力传感器

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3918019A (en) * 1974-03-11 1975-11-04 Univ Leland Stanford Junior Miniature absolute pressure transducer assembly and method
JPS5544786A (en) * 1978-09-27 1980-03-29 Hitachi Ltd Pressure sensor
US4426768A (en) * 1981-12-28 1984-01-24 United Technologies Corporation Ultra-thin microelectronic pressure sensors
JPS6120473A (ja) * 1984-07-06 1986-01-29 Nec Corp 紙面電送装置

Also Published As

Publication number Publication date
KR910010061B1 (ko) 1991-12-12
EP0280905A3 (en) 1989-09-20
DE3871550D1 (de) 1992-07-09
KR880011943A (ko) 1988-10-31
EP0280905A2 (de) 1988-09-07
EP0280905B1 (de) 1992-06-03
JPH0810170B2 (ja) 1996-01-31
JPS63217243A (ja) 1988-09-09
US4802952A (en) 1989-02-07

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee