DE3865149D1 - Traegergas-cluster-quelle fuer thermisch konditionierte cluster. - Google Patents

Traegergas-cluster-quelle fuer thermisch konditionierte cluster.

Info

Publication number
DE3865149D1
DE3865149D1 DE8888901682T DE3865149T DE3865149D1 DE 3865149 D1 DE3865149 D1 DE 3865149D1 DE 8888901682 T DE8888901682 T DE 8888901682T DE 3865149 T DE3865149 T DE 3865149T DE 3865149 D1 DE3865149 D1 DE 3865149D1
Authority
DE
Germany
Prior art keywords
clusters
carrier gas
gas cluster
thermally conditioned
cluster source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8888901682T
Other languages
English (en)
Inventor
Wolfgang Knauer
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Raytheon Co
Original Assignee
Hughes Aircraft Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hughes Aircraft Co filed Critical Hughes Aircraft Co
Application granted granted Critical
Publication of DE3865149D1 publication Critical patent/DE3865149D1/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/228—Gas flow assisted PVD deposition
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/221—Ion beam deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/08—Ion sources
    • H01J2237/0812—Ionized cluster beam [ICB] sources

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Physical Vapour Deposition (AREA)
DE8888901682T 1987-02-27 1988-01-19 Traegergas-cluster-quelle fuer thermisch konditionierte cluster. Expired - Fee Related DE3865149D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US07/019,911 US4833319A (en) 1987-02-27 1987-02-27 Carrier gas cluster source for thermally conditioned clusters
PCT/US1988/000118 WO1988006637A1 (en) 1987-02-27 1988-01-19 Carrier gas cluster source for thermally conditioned clusters

Publications (1)

Publication Number Publication Date
DE3865149D1 true DE3865149D1 (de) 1991-10-31

Family

ID=21795712

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8888901682T Expired - Fee Related DE3865149D1 (de) 1987-02-27 1988-01-19 Traegergas-cluster-quelle fuer thermisch konditionierte cluster.

Country Status (6)

Country Link
US (1) US4833319A (de)
EP (1) EP0302919B1 (de)
JP (1) JPH0639687B2 (de)
KR (1) KR910002567B1 (de)
DE (1) DE3865149D1 (de)
WO (1) WO1988006637A1 (de)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3824273A1 (de) * 1988-07-16 1990-01-18 Philips Patentverwaltung Verfahren zur herstellung von festkoerpern
US4935623A (en) * 1989-06-08 1990-06-19 Hughes Aircraft Company Production of energetic atom beams
JPH0452273A (ja) * 1990-06-18 1992-02-20 Mitsubishi Electric Corp 薄膜形成装置
DE4225169C2 (de) * 1992-07-30 1994-09-22 Juergen Dipl Phys Dr Gspann Vorrichtung und Verfahren zur Erzeugung von Agglomeratstrahlen
US5820681A (en) * 1995-05-03 1998-10-13 Chorus Corporation Unibody crucible and effusion cell employing such a crucible
US5827371A (en) * 1995-05-03 1998-10-27 Chorus Corporation Unibody crucible and effusion source employing such a crucible
US5796111A (en) * 1995-10-30 1998-08-18 Phrasor Scientific, Inc. Apparatus for cleaning contaminated surfaces using energetic cluster beams
JPH1059238A (ja) * 1996-06-25 1998-03-03 Yukio Isoda 自転車サドルの高さ調節機構
US6152074A (en) * 1996-10-30 2000-11-28 Applied Materials, Inc. Deposition of a thin film on a substrate using a multi-beam source
US20030101938A1 (en) * 1998-10-27 2003-06-05 Applied Materials, Inc. Apparatus for the deposition of high dielectric constant films
US6375790B1 (en) 1999-07-19 2002-04-23 Epion Corporation Adaptive GCIB for smoothing surfaces
US6629508B2 (en) * 1999-12-10 2003-10-07 Epion Corporation Ionizer for gas cluster ion beam formation
JP4521174B2 (ja) * 2003-10-15 2010-08-11 国立大学法人 名古屋工業大学 クラスター製造装置およびクラスター製造方法
US7084408B1 (en) * 2003-10-29 2006-08-01 Lsi Logic Corporation Vaporization and ionization of metals for use in semiconductor processing
US7323228B1 (en) 2003-10-29 2008-01-29 Lsi Logic Corporation Method of vaporizing and ionizing metals for use in semiconductor processing
US8835880B2 (en) * 2006-10-31 2014-09-16 Fei Company Charged particle-beam processing using a cluster source
US8303833B2 (en) * 2007-06-21 2012-11-06 Fei Company High resolution plasma etch
US20100243913A1 (en) * 2009-03-31 2010-09-30 Tel Epion Inc. Pre-aligned nozzle/skimmer
US8378293B1 (en) * 2011-09-09 2013-02-19 Agilent Technologies, Inc. In-situ conditioning in mass spectrometer systems
US9540725B2 (en) 2014-05-14 2017-01-10 Tel Epion Inc. Method and apparatus for beam deflection in a gas cluster ion beam system
US10580632B2 (en) 2017-12-18 2020-03-03 Agilent Technologies, Inc. In-situ conditioning in mass spectrometry systems
CN109115660A (zh) * 2018-08-23 2019-01-01 金华职业技术学院 一种粒子成像方法
US20220367214A1 (en) * 2019-10-23 2022-11-17 Tokyo Electron Limited Substrate cleaning method and substrate cleaning device
CN113174572A (zh) * 2021-04-19 2021-07-27 江苏集创原子团簇科技研究院有限公司 一种改进的载气团簇源发生方法与装置

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2621296A (en) * 1944-09-02 1952-12-09 Robert W Thompson Ion source
US2967239A (en) * 1954-02-19 1961-01-03 Gen Electric Method and apparatus for analyzing constituents of a substance
US3229157A (en) * 1963-09-30 1966-01-11 Charles M Stevens Crucible surface ionization source
AT245834B (de) * 1963-10-15 1966-03-25 Oesterr Studien Atomenergie Verfahren zur Messung von Isotopen sowie Einrichtung dazu
FR1402020A (fr) * 1964-04-27 1965-06-11 Csf Perfectionnements aux sources d'ions
US3700892A (en) * 1971-08-25 1972-10-24 Atomic Energy Commission Separation of mercury isotopes
US4217855A (en) * 1974-10-23 1980-08-19 Futaba Denshi Kogyo K.K. Vaporized-metal cluster ion source and ionized-cluster beam deposition device
JPS53110973A (en) * 1977-03-10 1978-09-28 Futaba Denshi Kogyo Kk Method and apparatus for manufacturing compounds
JPS583592B2 (ja) * 1978-09-08 1983-01-21 日本分光工業株式会社 質量分析計への試料導入方法及び装置
FR2532470A1 (fr) * 1982-08-30 1984-03-02 Commissariat Energie Atomique Dispositif d'ionisation d'un materiau par chauffage a haute temperature
KR890002747B1 (ko) * 1983-11-07 1989-07-26 가부시기가이샤 히다찌세이사꾸쇼 이온 빔에 의한 성막방법 및 그 장치
US4559096A (en) * 1984-06-25 1985-12-17 The United States Of America As Represented By The United States Department Of Energy Method of precisely modifying predetermined surface layers of a workpiece by cluster ion impact therewith

Also Published As

Publication number Publication date
JPH01502279A (ja) 1989-08-10
KR890700694A (ko) 1989-04-26
US4833319A (en) 1989-05-23
KR910002567B1 (ko) 1991-04-26
WO1988006637A1 (en) 1988-09-07
JPH0639687B2 (ja) 1994-05-25
EP0302919A1 (de) 1989-02-15
EP0302919B1 (de) 1991-09-25

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Legal Events

Date Code Title Description
8339 Ceased/non-payment of the annual fee