DE3865149D1 - Traegergas-cluster-quelle fuer thermisch konditionierte cluster. - Google Patents
Traegergas-cluster-quelle fuer thermisch konditionierte cluster.Info
- Publication number
- DE3865149D1 DE3865149D1 DE8888901682T DE3865149T DE3865149D1 DE 3865149 D1 DE3865149 D1 DE 3865149D1 DE 8888901682 T DE8888901682 T DE 8888901682T DE 3865149 T DE3865149 T DE 3865149T DE 3865149 D1 DE3865149 D1 DE 3865149D1
- Authority
- DE
- Germany
- Prior art keywords
- clusters
- carrier gas
- gas cluster
- thermally conditioned
- cluster source
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 230000001143 conditioned effect Effects 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/228—Gas flow assisted PVD deposition
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/221—Ion beam deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/06—Sources
- H01J2237/08—Ion sources
- H01J2237/0812—Ionized cluster beam [ICB] sources
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US07/019,911 US4833319A (en) | 1987-02-27 | 1987-02-27 | Carrier gas cluster source for thermally conditioned clusters |
PCT/US1988/000118 WO1988006637A1 (en) | 1987-02-27 | 1988-01-19 | Carrier gas cluster source for thermally conditioned clusters |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3865149D1 true DE3865149D1 (de) | 1991-10-31 |
Family
ID=21795712
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8888901682T Expired - Fee Related DE3865149D1 (de) | 1987-02-27 | 1988-01-19 | Traegergas-cluster-quelle fuer thermisch konditionierte cluster. |
Country Status (6)
Country | Link |
---|---|
US (1) | US4833319A (de) |
EP (1) | EP0302919B1 (de) |
JP (1) | JPH0639687B2 (de) |
KR (1) | KR910002567B1 (de) |
DE (1) | DE3865149D1 (de) |
WO (1) | WO1988006637A1 (de) |
Families Citing this family (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3824273A1 (de) * | 1988-07-16 | 1990-01-18 | Philips Patentverwaltung | Verfahren zur herstellung von festkoerpern |
US4935623A (en) * | 1989-06-08 | 1990-06-19 | Hughes Aircraft Company | Production of energetic atom beams |
JPH0452273A (ja) * | 1990-06-18 | 1992-02-20 | Mitsubishi Electric Corp | 薄膜形成装置 |
DE4225169C2 (de) * | 1992-07-30 | 1994-09-22 | Juergen Dipl Phys Dr Gspann | Vorrichtung und Verfahren zur Erzeugung von Agglomeratstrahlen |
US5820681A (en) * | 1995-05-03 | 1998-10-13 | Chorus Corporation | Unibody crucible and effusion cell employing such a crucible |
US5827371A (en) * | 1995-05-03 | 1998-10-27 | Chorus Corporation | Unibody crucible and effusion source employing such a crucible |
US5796111A (en) * | 1995-10-30 | 1998-08-18 | Phrasor Scientific, Inc. | Apparatus for cleaning contaminated surfaces using energetic cluster beams |
JPH1059238A (ja) * | 1996-06-25 | 1998-03-03 | Yukio Isoda | 自転車サドルの高さ調節機構 |
US6152074A (en) * | 1996-10-30 | 2000-11-28 | Applied Materials, Inc. | Deposition of a thin film on a substrate using a multi-beam source |
US20030101938A1 (en) * | 1998-10-27 | 2003-06-05 | Applied Materials, Inc. | Apparatus for the deposition of high dielectric constant films |
US6375790B1 (en) | 1999-07-19 | 2002-04-23 | Epion Corporation | Adaptive GCIB for smoothing surfaces |
WO2001043160A1 (en) * | 1999-12-10 | 2001-06-14 | Epion Corporation | Ionizer for gas cluster ion beam formation |
JP4521174B2 (ja) * | 2003-10-15 | 2010-08-11 | 国立大学法人 名古屋工業大学 | クラスター製造装置およびクラスター製造方法 |
US7084408B1 (en) * | 2003-10-29 | 2006-08-01 | Lsi Logic Corporation | Vaporization and ionization of metals for use in semiconductor processing |
US7323228B1 (en) | 2003-10-29 | 2008-01-29 | Lsi Logic Corporation | Method of vaporizing and ionizing metals for use in semiconductor processing |
US8835880B2 (en) * | 2006-10-31 | 2014-09-16 | Fei Company | Charged particle-beam processing using a cluster source |
US8303833B2 (en) * | 2007-06-21 | 2012-11-06 | Fei Company | High resolution plasma etch |
US20100243913A1 (en) * | 2009-03-31 | 2010-09-30 | Tel Epion Inc. | Pre-aligned nozzle/skimmer |
US8378293B1 (en) * | 2011-09-09 | 2013-02-19 | Agilent Technologies, Inc. | In-situ conditioning in mass spectrometer systems |
US9540725B2 (en) | 2014-05-14 | 2017-01-10 | Tel Epion Inc. | Method and apparatus for beam deflection in a gas cluster ion beam system |
US10580632B2 (en) | 2017-12-18 | 2020-03-03 | Agilent Technologies, Inc. | In-situ conditioning in mass spectrometry systems |
CN109115660A (zh) * | 2018-08-23 | 2019-01-01 | 金华职业技术学院 | 一种粒子成像方法 |
TW202123315A (zh) * | 2019-10-23 | 2021-06-16 | 日商東京威力科創股份有限公司 | 基板洗淨方法、及基板洗淨裝置 |
CN113174572A (zh) * | 2021-04-19 | 2021-07-27 | 江苏集创原子团簇科技研究院有限公司 | 一种改进的载气团簇源发生方法与装置 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2621296A (en) * | 1944-09-02 | 1952-12-09 | Robert W Thompson | Ion source |
US2967239A (en) * | 1954-02-19 | 1961-01-03 | Gen Electric | Method and apparatus for analyzing constituents of a substance |
US3229157A (en) * | 1963-09-30 | 1966-01-11 | Charles M Stevens | Crucible surface ionization source |
AT245834B (de) * | 1963-10-15 | 1966-03-25 | Oesterr Studien Atomenergie | Verfahren zur Messung von Isotopen sowie Einrichtung dazu |
FR1402020A (fr) * | 1964-04-27 | 1965-06-11 | Csf | Perfectionnements aux sources d'ions |
US3700892A (en) * | 1971-08-25 | 1972-10-24 | Atomic Energy Commission | Separation of mercury isotopes |
US4217855A (en) * | 1974-10-23 | 1980-08-19 | Futaba Denshi Kogyo K.K. | Vaporized-metal cluster ion source and ionized-cluster beam deposition device |
JPS53110973A (en) * | 1977-03-10 | 1978-09-28 | Futaba Denshi Kogyo Kk | Method and apparatus for manufacturing compounds |
JPS583592B2 (ja) * | 1978-09-08 | 1983-01-21 | 日本分光工業株式会社 | 質量分析計への試料導入方法及び装置 |
FR2532470A1 (fr) * | 1982-08-30 | 1984-03-02 | Commissariat Energie Atomique | Dispositif d'ionisation d'un materiau par chauffage a haute temperature |
KR890002747B1 (ko) * | 1983-11-07 | 1989-07-26 | 가부시기가이샤 히다찌세이사꾸쇼 | 이온 빔에 의한 성막방법 및 그 장치 |
US4559096A (en) * | 1984-06-25 | 1985-12-17 | The United States Of America As Represented By The United States Department Of Energy | Method of precisely modifying predetermined surface layers of a workpiece by cluster ion impact therewith |
-
1987
- 1987-02-27 US US07/019,911 patent/US4833319A/en not_active Expired - Lifetime
-
1988
- 1988-01-19 EP EP88901682A patent/EP0302919B1/de not_active Expired - Lifetime
- 1988-01-19 DE DE8888901682T patent/DE3865149D1/de not_active Expired - Fee Related
- 1988-01-19 WO PCT/US1988/000118 patent/WO1988006637A1/en active IP Right Grant
- 1988-01-19 JP JP50155788A patent/JPH0639687B2/ja not_active Expired - Lifetime
- 1988-01-19 KR KR1019880701352A patent/KR910002567B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
EP0302919A1 (de) | 1989-02-15 |
KR890700694A (ko) | 1989-04-26 |
KR910002567B1 (ko) | 1991-04-26 |
US4833319A (en) | 1989-05-23 |
EP0302919B1 (de) | 1991-09-25 |
JPH01502279A (ja) | 1989-08-10 |
WO1988006637A1 (en) | 1988-09-07 |
JPH0639687B2 (ja) | 1994-05-25 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8339 | Ceased/non-payment of the annual fee |