DE3860057D1 - Verdampfer-system fuer ionenquelle. - Google Patents

Verdampfer-system fuer ionenquelle.

Info

Publication number
DE3860057D1
DE3860057D1 DE8888304375T DE3860057T DE3860057D1 DE 3860057 D1 DE3860057 D1 DE 3860057D1 DE 8888304375 T DE8888304375 T DE 8888304375T DE 3860057 T DE3860057 T DE 3860057T DE 3860057 D1 DE3860057 D1 DE 3860057D1
Authority
DE
Germany
Prior art keywords
ion source
evaporator system
evaporator
ion
source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8888304375T
Other languages
English (en)
Inventor
Shu Satoh
Evans, Jr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Varian Semiconductor Equipment Associates Inc
Original Assignee
Varian Associates Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Varian Associates Inc filed Critical Varian Associates Inc
Application granted granted Critical
Publication of DE3860057D1 publication Critical patent/DE3860057D1/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J27/00Ion beam tubes
    • H01J27/02Ion sources; Ion guns
    • H01J27/20Ion sources; Ion guns using particle beam bombardment, e.g. ionisers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02Details
    • H01J37/04Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
    • H01J37/08Ion sources; Ion guns
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J27/00Ion beam tubes
    • H01J27/02Ion sources; Ion guns
    • H01J27/022Details

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Combustion & Propulsion (AREA)
  • Analytical Chemistry (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Physical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE8888304375T 1987-05-15 1988-05-13 Verdampfer-system fuer ionenquelle. Expired - Fee Related DE3860057D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/051,076 US4791273A (en) 1987-05-15 1987-05-15 Vaporizer system for ion source

Publications (1)

Publication Number Publication Date
DE3860057D1 true DE3860057D1 (de) 1990-04-19

Family

ID=21969179

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8888304375T Expired - Fee Related DE3860057D1 (de) 1987-05-15 1988-05-13 Verdampfer-system fuer ionenquelle.

Country Status (6)

Country Link
US (1) US4791273A (de)
EP (1) EP0291341B1 (de)
JP (1) JPS6463246A (de)
KR (1) KR960011851B1 (de)
CA (1) CA1276319C (de)
DE (1) DE3860057D1 (de)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5674574A (en) * 1996-05-20 1997-10-07 Micron Technology, Inc. Vapor delivery system for solid precursors and method regarding same
US6244575B1 (en) 1996-10-02 2001-06-12 Micron Technology, Inc. Method and apparatus for vaporizing liquid precursors and system for using same
US6280793B1 (en) 1996-11-20 2001-08-28 Micron Technology, Inc. Electrostatic method and apparatus for vaporizing precursors and system for using same
JP4820038B2 (ja) * 1999-12-13 2011-11-24 セメクイップ, インコーポレイテッド イオン注入イオン源、システム、および方法
JP3485104B2 (ja) 2001-04-24 2004-01-13 日新電機株式会社 イオン源用オーブン
US7326937B2 (en) * 2005-03-09 2008-02-05 Verian Semiconductor Equipment Associates, Inc. Plasma ion implantation systems and methods using solid source of dopant material
US7622722B2 (en) * 2006-11-08 2009-11-24 Varian Semiconductor Equipment Associates, Inc. Ion implantation device with a dual pumping mode and method thereof
CN103328681B (zh) * 2011-01-20 2015-09-23 夏普株式会社 坩埚和蒸镀装置
US9287079B2 (en) * 2014-07-02 2016-03-15 Varian Semiconductor Equipment Associates, Inc. Apparatus for dynamic temperature control of an ion source
US10672602B2 (en) 2014-10-13 2020-06-02 Arizona Board Of Regents On Behalf Of Arizona State University Cesium primary ion source for secondary ion mass spectrometer
CN104534437A (zh) * 2014-12-30 2015-04-22 陆宇光 用大功率双螺旋红外线加热灯管加热的光波蒸汽锅炉
US10954594B2 (en) 2015-09-30 2021-03-23 Applied Materials, Inc. High temperature vapor delivery system and method
US9928983B2 (en) * 2016-06-30 2018-03-27 Varian Semiconductor Equipment Associates, Inc. Vaporizer for ion source

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2862441A (en) * 1954-12-09 1958-12-02 Gen Electric Toaster-oven cooking appliance
US3155813A (en) * 1962-02-23 1964-11-03 Little Inc A Mirror assembly for an arc imaging furnace
US3619562A (en) * 1970-01-22 1971-11-09 Gen Motors Corp Movable reflector infrared heater
FR2145012A5 (de) * 1971-07-06 1973-02-16 Thomson Csf
GB1361771A (en) * 1972-02-15 1974-07-30 Leybold Heraeus Verwaltung Apparatus for heating material by means of a electron beam in a vacuum
US4015029A (en) * 1975-06-27 1977-03-29 Xerox Corporation Selenium and selenium alloy evaporation technique
DE2917841A1 (de) * 1979-05-03 1980-11-13 Leybold Heraeus Gmbh & Co Kg Verdampfer fuer vakuumaufdampfanlagen
DE3270076D1 (en) * 1981-06-02 1986-04-30 Ibt Dubilier Ltd Dispenser for ion source
IT1190892B (it) * 1982-06-24 1988-02-24 Guido Birocchi Struttura di generatore di vapore per stiratura ed usi accessori
JPS59165356A (ja) * 1983-03-09 1984-09-18 Hitachi Ltd イオン源
JPS59169125A (ja) * 1983-03-16 1984-09-25 Ushio Inc 半導体ウエハ−の加熱方法
US4503087A (en) * 1983-08-29 1985-03-05 Varian Associates, Inc. Process for high temperature drive-in diffusion of dopants into semiconductor wafers
DD251436A1 (de) * 1986-07-28 1987-11-11 Akad Wissenschaften Ddr Ionenquelle

Also Published As

Publication number Publication date
KR960011851B1 (ko) 1996-09-03
CA1276319C (en) 1990-11-13
US4791273A (en) 1988-12-13
KR880014646A (ko) 1988-12-24
JPH0415575B2 (de) 1992-03-18
EP0291341A1 (de) 1988-11-17
JPS6463246A (en) 1989-03-09
EP0291341B1 (de) 1990-03-14

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.(N.

8339 Ceased/non-payment of the annual fee