DE3856420D1 - Gegen elektrostatische Entladungen geschützter integrierter Schaltkreis mit variablem Schutzschwellwert - Google Patents

Gegen elektrostatische Entladungen geschützter integrierter Schaltkreis mit variablem Schutzschwellwert

Info

Publication number
DE3856420D1
DE3856420D1 DE3856420T DE3856420T DE3856420D1 DE 3856420 D1 DE3856420 D1 DE 3856420D1 DE 3856420 T DE3856420 T DE 3856420T DE 3856420 T DE3856420 T DE 3856420T DE 3856420 D1 DE3856420 D1 DE 3856420D1
Authority
DE
Germany
Prior art keywords
integrated circuit
electrostatic discharge
protected against
protection threshold
against electrostatic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE3856420T
Other languages
English (en)
Other versions
DE3856420T2 (de
Inventor
Jacek Kowalski
Francois Tailliet
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SA
Original Assignee
STMicroelectronics SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SA filed Critical STMicroelectronics SA
Publication of DE3856420D1 publication Critical patent/DE3856420D1/de
Application granted granted Critical
Publication of DE3856420T2 publication Critical patent/DE3856420T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Emergency Protection Circuit Devices (AREA)
DE3856420T 1987-11-06 1988-10-28 Gegen elektrostatische Entladungen geschützter integrierter Schaltkreis mit variablem Schutzschwellwert Expired - Fee Related DE3856420T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8715405A FR2623018B1 (fr) 1987-11-06 1987-11-06 Circuit integre protege contre les decharges electrostatiques avec seuil de protection variable

Publications (2)

Publication Number Publication Date
DE3856420D1 true DE3856420D1 (de) 2000-08-24
DE3856420T2 DE3856420T2 (de) 2000-12-07

Family

ID=9356561

Family Applications (1)

Application Number Title Priority Date Filing Date
DE3856420T Expired - Fee Related DE3856420T2 (de) 1987-11-06 1988-10-28 Gegen elektrostatische Entladungen geschützter integrierter Schaltkreis mit variablem Schutzschwellwert

Country Status (7)

Country Link
US (1) US4890187A (de)
EP (1) EP0316211B1 (de)
JP (1) JP2632720B2 (de)
KR (1) KR890008923A (de)
DE (1) DE3856420T2 (de)
ES (1) ES2150408T3 (de)
FR (1) FR2623018B1 (de)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USRE37477E1 (en) * 1987-11-06 2001-12-18 Sgs-Thomson Microelectronics, Inc. Integrated circuit protected against electrostatic discharges, with variable protection threshold
JPH01140757A (ja) * 1987-11-27 1989-06-01 Nec Corp 半導体入力保護装置
US5465189A (en) * 1990-03-05 1995-11-07 Texas Instruments Incorporated Low voltage triggering semiconductor controlled rectifiers
FR2660795B1 (fr) * 1990-04-10 1994-01-07 Sgs Thomson Microelectronics Sa Circuit de detection de fusible.
US5272586A (en) * 1991-01-29 1993-12-21 National Semiconductor Corporation Technique for improving ESD immunity
FR2690008B1 (fr) * 1991-05-29 1994-06-10 Gemplus Card Int Memoire avec cellule memoire eeprom a effet capacitif et procede de lecture d'une telle cellule memoire.
US5255146A (en) * 1991-08-29 1993-10-19 National Semiconductor Corporation Electrostatic discharge detection and clamp control circuit
FR2683342B1 (fr) * 1991-10-31 1994-01-07 Gemplus Card International Circuit d'interface pour carte a circuit integre.
US5225702A (en) * 1991-12-05 1993-07-06 Texas Instruments Incorporated Silicon controlled rectifier structure for electrostatic discharge protection
FR2686989B1 (fr) * 1992-01-30 1997-01-17 Gemplus Card Int Procede de comptage de securite pour un compteur electronique binaire.
FR2690786A1 (fr) * 1992-04-30 1993-10-29 Sgs Thomson Microelectronics Sa Dispositif de protection d'un circuit intégré contre les décharges électrostatiques.
US5371395A (en) * 1992-05-06 1994-12-06 Xerox Corporation High voltage input pad protection circuitry
US5514612A (en) * 1993-03-03 1996-05-07 California Micro Devices, Inc. Method of making a semiconductor device with integrated RC network and schottky diode
FR2703501B1 (fr) * 1993-04-01 1995-05-19 Gemplus Card Int Circuit intégré pour carte à mémoire et procédé de décomptage d'unités dans une carte à mémoire.
FR2703526B1 (fr) * 1993-04-02 1995-05-19 Gemplus Card Int Circuit de déclenchement automatique.
FR2705810B1 (fr) * 1993-05-26 1995-06-30 Gemplus Card Int Puce de carte à puce munie d'un moyen de limitation du nombre d'authentifications.
US5594611A (en) * 1994-01-12 1997-01-14 Lsi Logic Corporation Integrated circuit input/output ESD protection circuit with gate voltage regulation and parasitic zener and junction diode
JP2595491B2 (ja) * 1994-06-07 1997-04-02 日本電気株式会社 表面実装型保護回路部品
US5625280A (en) * 1995-10-30 1997-04-29 International Business Machines Corp. Voltage regulator bypass circuit
US6002567A (en) * 1997-10-17 1999-12-14 Lsi Logic Corporation ESD protection for high voltage level input for analog application
JP3472476B2 (ja) * 1998-04-17 2003-12-02 松下電器産業株式会社 半導体装置及びその駆動方法
US6061222A (en) * 1998-08-28 2000-05-09 Hewlett-Packard Company Method and apparatus for reducing noise in integrated circuit chips
US6552886B1 (en) 2000-06-29 2003-04-22 Pericom Semiconductor Corp. Active Vcc-to-Vss ESD clamp with hystersis for low supply chips
US6700164B1 (en) * 2000-07-07 2004-03-02 International Business Machines Corporation Tungsten hot wire current limiter for ESD protection
US6670683B2 (en) 2001-01-04 2003-12-30 International Business Machines Corporation Composite transistor having a slew-rate control
JP2004006480A (ja) 2002-05-31 2004-01-08 Renesas Technology Corp 電界効果トランジスタのゲート電極保護ダイオードの製造方法
CN100369252C (zh) * 2006-02-13 2008-02-13 友达光电股份有限公司 静电放电保护电路
JP6354381B2 (ja) * 2014-06-26 2018-07-11 富士通セミコンダクター株式会社 半導体装置及びその製造方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2289051A1 (fr) * 1974-10-22 1976-05-21 Ibm Dispositifs a semi-conducteur du genre transistors a effet de champ et a porte isolee et circuits de protection cotre les surtensions
US4602268A (en) * 1978-12-20 1986-07-22 At&T Bell Laboratories High voltage dielectrically isolated dual gate solid-state switch
US4323942A (en) * 1978-12-20 1982-04-06 Bell Telephone Laboratories, Incorporated Solid-state protector circuitry using gated diode switch
JPS6048106B2 (ja) * 1979-12-24 1985-10-25 富士通株式会社 半導体集積回路
US4595941A (en) * 1980-12-03 1986-06-17 Rca Corporation Protection circuit for integrated circuit devices
US4408245A (en) * 1981-12-28 1983-10-04 Rca Corporation Protection and anti-floating network for insulated-gate field-effect circuitry
US4786956A (en) * 1982-10-20 1988-11-22 North American Philips Corporation, Signetics Division Input protection device for integrated circuits
JPS6010765A (ja) * 1983-06-30 1985-01-19 Fujitsu Ltd 半導体装置
JPS6132464A (ja) * 1984-07-24 1986-02-15 Nec Corp Ｃｍｏｓ型集積回路装置
WO1987002511A1 (en) * 1985-10-15 1987-04-23 American Telephone & Telegraph Company Protection of igfet integrated circuits from electrostatic discharge
JPH0666402B2 (ja) * 1985-12-12 1994-08-24 三菱電機株式会社 半導体集積回路装置の入力保護回路
US4789917A (en) * 1987-08-31 1988-12-06 National Semiconductor Corp. MOS I/O protection using switched body circuit design

Also Published As

Publication number Publication date
JPH01168064A (ja) 1989-07-03
JP2632720B2 (ja) 1997-07-23
ES2150408T3 (es) 2000-12-01
KR890008923A (ko) 1989-07-13
FR2623018B1 (fr) 1990-02-09
FR2623018A1 (fr) 1989-05-12
US4890187A (en) 1989-12-26
EP0316211B1 (de) 2000-07-19
EP0316211A1 (de) 1989-05-17
DE3856420T2 (de) 2000-12-07

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee