DE3854365D1 - Verfahren zur Benetzung von Reiskörnern. - Google Patents
Verfahren zur Benetzung von Reiskörnern.Info
- Publication number
- DE3854365D1 DE3854365D1 DE3854365T DE3854365T DE3854365D1 DE 3854365 D1 DE3854365 D1 DE 3854365D1 DE 3854365 T DE3854365 T DE 3854365T DE 3854365 T DE3854365 T DE 3854365T DE 3854365 D1 DE3854365 D1 DE 3854365D1
- Authority
- DE
- Germany
- Prior art keywords
- rice grains
- wetting
- wetting rice
- grains
- rice
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 240000007594 Oryza sativa Species 0.000 title 1
- 235000007164 Oryza sativa Nutrition 0.000 title 1
- 235000013339 cereals Nutrition 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 235000009566 rice Nutrition 0.000 title 1
- 238000009736 wetting Methods 0.000 title 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B02—CRUSHING, PULVERISING, OR DISINTEGRATING; PREPARATORY TREATMENT OF GRAIN FOR MILLING
- B02B—PREPARING GRAIN FOR MILLING; REFINING GRANULAR FRUIT TO COMMERCIAL PRODUCTS BY WORKING THE SURFACE
- B02B1/00—Preparing grain for milling or like processes
- B02B1/08—Conditioning grain with respect to temperature or water content
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B02—CRUSHING, PULVERISING, OR DISINTEGRATING; PREPARATORY TREATMENT OF GRAIN FOR MILLING
- B02B—PREPARING GRAIN FOR MILLING; REFINING GRANULAR FRUIT TO COMMERCIAL PRODUCTS BY WORKING THE SURFACE
- B02B1/00—Preparing grain for milling or like processes
- B02B1/04—Wet treatment, e.g. washing, wetting, softening
- B02B1/06—Devices with rotary parts
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B02—CRUSHING, PULVERISING, OR DISINTEGRATING; PREPARATORY TREATMENT OF GRAIN FOR MILLING
- B02B—PREPARING GRAIN FOR MILLING; REFINING GRANULAR FRUIT TO COMMERCIAL PRODUCTS BY WORKING THE SURFACE
- B02B1/00—Preparing grain for milling or like processes
- B02B1/04—Wet treatment, e.g. washing, wetting, softening
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/266—Bombardment with radiation with high-energy radiation producing ion implantation using masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
- H01L21/28035—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
- H01L27/0928—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors comprising both N- and P- wells in the substrate, e.g. twin-tub
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- High Energy & Nuclear Physics (AREA)
- Toxicology (AREA)
- Health & Medical Sciences (AREA)
- Adjustment And Processing Of Grains (AREA)
- Cereal-Derived Products (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62147223A JPH0783834B2 (ja) | 1987-06-12 | 1987-06-12 | 米粒の加湿方法及びその装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE3854365D1 true DE3854365D1 (de) | 1995-10-05 |
DE3854365T2 DE3854365T2 (de) | 1996-02-08 |
Family
ID=15425355
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE3854365T Expired - Lifetime DE3854365T2 (de) | 1987-06-12 | 1988-06-10 | Verfahren zur Benetzung von Reiskörnern. |
Country Status (9)
Country | Link |
---|---|
US (1) | US5002788A (de) |
EP (1) | EP0294838B1 (de) |
JP (1) | JPH0783834B2 (de) |
KR (1) | KR920001529B1 (de) |
AU (1) | AU591047B2 (de) |
DE (1) | DE3854365T2 (de) |
MX (1) | MX172179B (de) |
MY (1) | MY102833A (de) |
PH (1) | PH25487A (de) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0651119B2 (ja) * | 1986-03-04 | 1994-07-06 | 株式会社佐竹製作所 | 米粒加圧加湿装置 |
US5476677A (en) * | 1990-12-28 | 1995-12-19 | Tadashi Inoue | Cereals treated under high pressure and method of preparing the same |
JP3506441B2 (ja) * | 1991-08-29 | 2004-03-15 | 株式会社サタケ | 精麦製粉装置 |
US5133982A (en) * | 1991-09-25 | 1992-07-28 | Panhandle Fluid Process, Inc. | Method and apparatus for conditioning a grain flow |
AU664073B2 (en) * | 1992-02-19 | 1995-11-02 | Yukio Ishida | Highly water absorbing rice, method of manufacturing same and utilization thereof |
JP3435988B2 (ja) * | 1996-02-09 | 2003-08-11 | 株式会社サタケ | 精麦製粉方法 |
JP4172002B2 (ja) | 1999-08-24 | 2008-10-29 | 株式会社サタケ | 循環式穀物乾燥機 |
US6602531B2 (en) * | 2001-07-12 | 2003-08-05 | Kazuo Naka | Method for pre-processing of dried food |
JP4409879B2 (ja) * | 2003-08-04 | 2010-02-03 | 株式会社ファンケル | γ−アミノ酪酸を富化させる方法及びその方法により得られる穀物 |
JP2008043881A (ja) * | 2006-08-17 | 2008-02-28 | Kubota Kucho Kk | 農産品の保湿方法および装置 |
DE102010061318B3 (de) * | 2010-12-17 | 2012-04-05 | Vibronet Gräf Gmbh & Co. Kg | Vorrichtung zum Benetzen von Körnerfrüchten mit einer Flüssigkeit sowie Verfahren zum Benetzen von Körnerfrüchten mit einer Flüssigkeit |
CN109419312B (zh) * | 2017-09-05 | 2021-10-12 | 佛山市顺德区美的电热电器制造有限公司 | 电烹饪器及用于电烹饪器的再加热方法 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2592407A (en) * | 1948-09-09 | 1952-04-08 | Daniel S Fernandes | Method of processing rice for preserving the vitamin contents thereof |
DE2503383C2 (de) * | 1974-02-08 | 1982-12-23 | Gebrüder Bühler AG, 9240 Uzwil | Verfahren zum Netzen ganzer Körnerfrüchte, insbesondere für Getreidekörner, und Netzvorrichtung zur Durchführung dieses Verfahrens |
US4055673A (en) * | 1974-02-08 | 1977-10-25 | Gebrueder Buehler Ag | Method of moistening whole grains |
JPS55124549A (en) * | 1979-03-19 | 1980-09-25 | Satake Eng Co Ltd | Riceecleaning device |
JPS6017498B2 (ja) * | 1979-08-10 | 1985-05-02 | 株式会社 サタケ | 精白米加湿方法 |
US4338344A (en) * | 1980-01-18 | 1982-07-06 | General Foods Corporation | Process for producing a quick-cooking rice |
ES8608293A1 (es) * | 1984-06-29 | 1986-06-16 | Gen Foods Corp | Un procedimiento para preparar arroz blanco de consumo |
JPS61283357A (ja) * | 1985-02-08 | 1986-12-13 | 株式会社 サタケ | 米粒加湿方法および米粒加湿装置 |
JPS61209056A (ja) * | 1985-03-11 | 1986-09-17 | 株式会社 サタケ | 米粒高速安全加湿方法および装置 |
JPH0651119B2 (ja) * | 1986-03-04 | 1994-07-06 | 株式会社佐竹製作所 | 米粒加圧加湿装置 |
-
1987
- 1987-06-12 JP JP62147223A patent/JPH0783834B2/ja not_active Expired - Fee Related
-
1988
- 1988-06-07 AU AU17466/88A patent/AU591047B2/en not_active Expired
- 1988-06-08 MY MYPI88000621A patent/MY102833A/en unknown
- 1988-06-09 US US07/204,639 patent/US5002788A/en not_active Expired - Lifetime
- 1988-06-09 MX MX011822A patent/MX172179B/es unknown
- 1988-06-10 DE DE3854365T patent/DE3854365T2/de not_active Expired - Lifetime
- 1988-06-10 PH PH37052A patent/PH25487A/en unknown
- 1988-06-10 EP EP88109298A patent/EP0294838B1/de not_active Expired - Lifetime
- 1988-06-11 KR KR1019880007047A patent/KR920001529B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
KR890000154A (ko) | 1989-03-13 |
EP0294838B1 (de) | 1995-08-30 |
JPS63310644A (ja) | 1988-12-19 |
AU591047B2 (en) | 1989-11-23 |
MX172179B (es) | 1993-12-06 |
EP0294838A3 (en) | 1989-10-04 |
MY102833A (en) | 1992-11-30 |
PH25487A (en) | 1991-07-24 |
AU1746688A (en) | 1989-01-19 |
KR920001529B1 (ko) | 1992-02-18 |
US5002788A (en) | 1991-03-26 |
JPH0783834B2 (ja) | 1995-09-13 |
EP0294838A2 (de) | 1988-12-14 |
DE3854365T2 (de) | 1996-02-08 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8363 | Opposition against the patent | ||
8365 | Fully valid after opposition proceedings |