DE3853179D1 - Supraleitende Struktur. - Google Patents

Supraleitende Struktur.

Info

Publication number
DE3853179D1
DE3853179D1 DE3853179T DE3853179T DE3853179D1 DE 3853179 D1 DE3853179 D1 DE 3853179D1 DE 3853179 T DE3853179 T DE 3853179T DE 3853179 T DE3853179 T DE 3853179T DE 3853179 D1 DE3853179 D1 DE 3853179D1
Authority
DE
Germany
Prior art keywords
superconducting structure
superconducting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE3853179T
Other languages
English (en)
Other versions
DE3853179T3 (de
DE3853179T2 (de
Inventor
Kentaro Setsune
Takeshi Kamada
Hideaki Adachi
Kiyotaka Wasa
Takashi Hirao
Hidetaka Higashino
Osamu Yamazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=27326152&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=DE3853179(D1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Priority claimed from JP62189281A external-priority patent/JP2506798B2/ja
Priority claimed from JP62208632A external-priority patent/JPS6452313A/ja
Priority claimed from JP62208649A external-priority patent/JPS6452318A/ja
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Application granted granted Critical
Publication of DE3853179D1 publication Critical patent/DE3853179D1/de
Publication of DE3853179T2 publication Critical patent/DE3853179T2/de
Publication of DE3853179T3 publication Critical patent/DE3853179T3/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H10N60/0268—Manufacture or treatment of devices comprising copper oxide
    • H10N60/0296—Processes for depositing or forming copper oxide superconductor layers
    • H10N60/0576—Processes for depositing or forming copper oxide superconductor layers characterised by the substrate
    • H10N60/0632—Intermediate layers, e.g. for growth control
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S428/00—Stock material or miscellaneous articles
    • Y10S428/922—Static electricity metal bleed-off metallic stock
    • Y10S428/9265—Special properties
    • Y10S428/93—Electric superconducting
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00—Superconductor technology: apparatus, material, process
    • Y10S505/70—High TC, above 30 k, superconducting device, article, or structured stock
    • Y10S505/701—Coated or thin film device, i.e. active or passive
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00—Superconductor technology: apparatus, material, process
    • Y10S505/70—High TC, above 30 k, superconducting device, article, or structured stock
    • Y10S505/701—Coated or thin film device, i.e. active or passive
    • Y10S505/702—Josephson junction present
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00—Superconductor technology: apparatus, material, process
    • Y10S505/70—High TC, above 30 k, superconducting device, article, or structured stock
    • Y10S505/701—Coated or thin film device, i.e. active or passive
    • Y10S505/703—Microelectronic device with superconducting conduction line
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00—Superconductor technology: apparatus, material, process
    • Y10S505/70—High TC, above 30 k, superconducting device, article, or structured stock
    • Y10S505/704—Wire, fiber, or cable

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Superconductor Devices And Manufacturing Methods Thereof (AREA)
  • Superconductors And Manufacturing Methods Therefor (AREA)
  • Containers, Films, And Cooling For Superconductive Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE3853179T 1987-07-29 1988-07-27 Supraleitende Struktur. Expired - Fee Related DE3853179T3 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP62189281A JP2506798B2 (ja) 1987-07-29 1987-07-29 超電導体
JP62208632A JPS6452313A (en) 1987-08-21 1987-08-21 Superconductor
JP62208649A JPS6452318A (en) 1987-08-21 1987-08-21 Superconductor structure

Publications (3)

Publication Number Publication Date
DE3853179D1 true DE3853179D1 (de) 1995-04-06
DE3853179T2 DE3853179T2 (de) 1995-10-19
DE3853179T3 DE3853179T3 (de) 1999-02-25

Family

ID=27326152

Family Applications (1)

Application Number Title Priority Date Filing Date
DE3853179T Expired - Fee Related DE3853179T3 (de) 1987-07-29 1988-07-27 Supraleitende Struktur.

Country Status (3)

Country Link
US (1) US4980339A (de)
EP (1) EP0301525B2 (de)
DE (1) DE3853179T3 (de)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6457438A (en) * 1987-08-28 1989-03-03 Mitsubishi Electric Corp Recording medium
DE3850632T2 (de) * 1987-10-27 1994-12-08 Toshiba Kawasaki Kk Supraleiterelement und Verfahren zu seiner Herstellung.
CA1336567C (en) * 1988-02-03 1995-08-08 Franz Joseph Himpsel Epitaxy of high t_ superconductors on silicon
US6238774B1 (en) * 1988-02-04 2001-05-29 Fujitsu Limited Protection of oxide superconductor
US5034359A (en) * 1988-04-08 1991-07-23 Kabushiki Kaisha Toshiba Insulating composition
GB8809548D0 (en) * 1988-04-22 1988-05-25 Somekh R E Epitaxial barrier layers in thin film technology
JPH01305580A (ja) * 1988-06-03 1989-12-08 Mitsubishi Metal Corp 半導体素子製造用超電導セラミック薄膜形成単結晶ウエハー材
EP0393932B1 (de) * 1989-04-17 1995-04-05 Ngk Insulators, Ltd. Supraleitende Struktur zur magnetischen Abschirmung
JP3015408B2 (ja) * 1989-05-23 2000-03-06 三洋電機株式会社 超電導トランジスタの製造方法
EP0401031A3 (de) * 1989-05-31 1991-04-17 Kabushiki Kaisha Toshiba Dünner Oxidfilm und dessen epitaktisches Aufwachsverfahren
EP0619283A3 (de) * 1989-06-30 1994-11-30 Sumitomo Electric Industries Substrat mit einer supraleitenden Schicht.
JP2767298B2 (ja) * 1989-09-05 1998-06-18 財団法人生産開発科学研究所 積層薄膜体及びその製造法
US5358925A (en) * 1990-04-18 1994-10-25 Board Of Trustees Of The Leland Stanford Junior University Silicon substrate having YSZ epitaxial barrier layer and an epitaxial superconducting layer
US5173474A (en) * 1990-04-18 1992-12-22 Xerox Corporation Silicon substrate having an epitaxial superconducting layer thereon and method of making same
GB9008753D0 (en) * 1990-04-19 1990-06-13 Lynxvale Ltd Superconductors
DE69113010T2 (de) * 1990-12-19 1996-05-09 At & T Corp Artikel mit supraleiter/isolator Lagenstruktur und Verfahren zur Herstellung des Artikels.
SG46182A1 (en) * 1991-01-07 1998-02-20 Ibm Superconducting field-effect transistors with inverted misfet structure and method for making the same
WO1993001621A1 (en) * 1991-07-03 1993-01-21 Cookson Group Plc Alkaline earth metal sulphate uses
DE4124048C2 (de) * 1991-07-19 1995-02-02 Mueller Paul Supraleitfähiges Bauelement mit einem Josephsonkontakt in einem monokristallinen Hochtemperatursupraleiter und Verfahren zu dessen Herstellung
US5270298A (en) * 1992-03-05 1993-12-14 Bell Communications Research, Inc. Cubic metal oxide thin film epitaxially grown on silicon
US5356474A (en) * 1992-11-27 1994-10-18 General Electric Company Apparatus and method for making aligned Hi-Tc tape superconductors
US5323023A (en) * 1992-12-02 1994-06-21 Xerox Corporation Epitaxial magnesium oxide as a buffer layer on (111) tetrahedral semiconductors
DE69309306T2 (de) * 1992-12-15 1997-09-04 Du Pont Elektrische Verbindungsstrukturen
US5453325A (en) * 1993-12-09 1995-09-26 Eastman Kodak Company Nonlinear optical waveguide multilayer structure
US5478653A (en) * 1994-04-04 1995-12-26 Guenzer; Charles S. Bismuth titanate as a template layer for growth of crystallographically oriented silicon
US6734558B2 (en) * 1998-08-20 2004-05-11 The United States Of America As Represented By The Secretary Of The Navy Electronic devices with barium barrier film and process for making same
US6933566B2 (en) * 2001-07-05 2005-08-23 International Business Machines Corporation Method of forming lattice-matched structure on silicon and structure formed thereby
US6852575B2 (en) * 2001-07-05 2005-02-08 International Business Machines Corporation Method of forming lattice-matched structure on silicon and structure formed thereby
JP4120589B2 (ja) * 2004-01-13 2008-07-16 セイコーエプソン株式会社 磁気抵抗効果素子及び磁気メモリ装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA1329952C (en) * 1987-04-27 1994-05-31 Yoshihiko Imanaka Multi-layer superconducting circuit substrate and process for manufacturing same
CA1326976C (en) * 1987-05-26 1994-02-15 Satoshi Takano Superconducting member
EP0300499B2 (de) * 1987-07-24 1998-08-19 Matsushita Electric Industrial Co., Ltd. Zusammengesetzte supraleitende Schicht

Also Published As

Publication number Publication date
EP0301525B2 (de) 1998-08-19
EP0301525B1 (de) 1995-03-01
US4980339A (en) 1990-12-25
DE3853179T3 (de) 1999-02-25
DE3853179T2 (de) 1995-10-19
EP0301525A2 (de) 1989-02-01
EP0301525A3 (en) 1990-06-20

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Legal Events

Date Code Title Description
8363 Opposition against the patent
8366 Restricted maintained after opposition proceedings
8320 Willingness to grant licences declared (paragraph 23)
8339 Ceased/non-payment of the annual fee