DE3842481A1 - Verfahren zur herstellung einer roentgenstrahlmaske - Google Patents
Verfahren zur herstellung einer roentgenstrahlmaskeInfo
- Publication number
- DE3842481A1 DE3842481A1 DE3842481A DE3842481A DE3842481A1 DE 3842481 A1 DE3842481 A1 DE 3842481A1 DE 3842481 A DE3842481 A DE 3842481A DE 3842481 A DE3842481 A DE 3842481A DE 3842481 A1 DE3842481 A1 DE 3842481A1
- Authority
- DE
- Germany
- Prior art keywords
- ray
- film
- resist
- ray absorber
- orbital
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 33
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 18
- 239000010408 film Substances 0.000 claims abstract description 98
- 239000006096 absorbing agent Substances 0.000 claims abstract description 55
- 230000001681 protective effect Effects 0.000 claims abstract description 31
- 239000010409 thin film Substances 0.000 claims abstract description 21
- 229910001385 heavy metal Inorganic materials 0.000 claims abstract description 18
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 6
- 230000005855 radiation Effects 0.000 claims description 22
- 229920003229 poly(methyl methacrylate) Polymers 0.000 claims description 19
- 239000004926 polymethyl methacrylate Substances 0.000 claims description 19
- 238000007747 plating Methods 0.000 claims description 14
- 229920001721 polyimide Polymers 0.000 claims description 5
- 239000004642 Polyimide Substances 0.000 claims description 3
- 238000000059 patterning Methods 0.000 claims description 2
- 229910052751 metal Inorganic materials 0.000 claims 1
- 239000002184 metal Substances 0.000 claims 1
- 238000005530 etching Methods 0.000 abstract description 12
- 239000002356 single layer Substances 0.000 abstract description 2
- 230000005469 synchrotron radiation Effects 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 29
- 238000001020 plasma etching Methods 0.000 description 9
- 239000000463 material Substances 0.000 description 7
- 239000000460 chlorine Substances 0.000 description 6
- 150000002500 ions Chemical class 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- 229910052715 tantalum Inorganic materials 0.000 description 6
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 4
- 238000001015 X-ray lithography Methods 0.000 description 4
- 238000000609 electron-beam lithography Methods 0.000 description 4
- 238000004528 spin coating Methods 0.000 description 4
- 229910052721 tungsten Inorganic materials 0.000 description 4
- NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical compound CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 description 3
- UIHCLUNTQKBZGK-UHFFFAOYSA-N Methyl isobutyl ketone Natural products CCC(C)C(C)=O UIHCLUNTQKBZGK-UHFFFAOYSA-N 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 238000010894 electron beam technology Methods 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000005299 abrasion Methods 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 125000004432 carbon atom Chemical group C* 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 238000000889 atomisation Methods 0.000 description 1
- 238000003763 carbonization Methods 0.000 description 1
- 125000002915 carbonyl group Chemical group [*:2]C([*:1])=O 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 125000004218 chloromethyl group Chemical group [H]C([H])(Cl)* 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- -1 fluorobutyl methacrylate Chemical compound 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 238000002164 ion-beam lithography Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 238000010309 melting process Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 239000006100 radiation absorber Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 238000012549 training Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/40—Treatment after imagewise removal, e.g. baking
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62318779A JPH01161718A (ja) | 1987-12-18 | 1987-12-18 | Ｘ線マスクの製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE3842481A1 true DE3842481A1 (de) | 1989-06-29 |
| DE3842481C2 DE3842481C2 (enrdf_load_stackoverflow) | 1992-12-24 |
Family
ID=18102849
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE3842481A Granted DE3842481A1 (de) | 1987-12-18 | 1988-12-16 | Verfahren zur herstellung einer roentgenstrahlmaske |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JPH01161718A (enrdf_load_stackoverflow) |
| DE (1) | DE3842481A1 (enrdf_load_stackoverflow) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3915650A1 (de) * | 1989-05-12 | 1990-11-15 | Siemens Ag | Verfahren zur strukturierung einer auf einem halbleiterschichtaufbau angeordneten schicht |
| US5099284A (en) * | 1989-08-28 | 1992-03-24 | Eastman Kodak Company | Master sheet and drum assembly |
| DE19743554C2 (de) * | 1996-11-30 | 2000-10-12 | Lg Semicon Co Ltd | Verfahren zum Herstellen einer Röntgenstrahlmaske |
| DE10345476A1 (de) * | 2003-09-30 | 2005-05-12 | Infineon Technologies Ag | Lithographische Maske und Verfahren zum Bedecken einer Maskenschicht |
| US7078134B2 (en) | 2002-05-21 | 2006-07-18 | Infineon Technologies Ag | Photolithographic mask having a structure region covered by a thin protective coating of only a few atomic layers and methods for the fabrication of the mask including ALCVD to form the thin protective coating |
| US7090948B2 (en) | 2001-11-16 | 2006-08-15 | Infineon Technologies Ag | Reflection mask and method for fabricating the reflection mask |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3201815A1 (de) * | 1981-01-22 | 1982-10-07 | Nippon Telegraph & Telephone Public Corp., Tokyo | Positives resistmaterial und verfahren zur herstellung eines musters daraus |
| DE3232498A1 (de) * | 1982-09-01 | 1984-03-01 | Philips Patentverwaltung Gmbh, 2000 Hamburg | Maske fuer die mustererzeugung in lackschichten mittels roentgenstrahllithographie und verfahren zu ihrer herstellung |
| DE3421773A1 (de) * | 1983-07-27 | 1985-02-07 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum herstellen von masshaltigen strukturen mit hohem aspektverhaeltnis im 1 (pfeil abwaerts)/(pfeil abwaerts)um-bereich und darunter fuer die mikroelektronik und anwendung dieses verfahrens zur herstellung einer roentgenabsorbermaske |
-
1987
- 1987-12-18 JP JP62318779A patent/JPH01161718A/ja active Pending
-
1988
- 1988-12-16 DE DE3842481A patent/DE3842481A1/de active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3201815A1 (de) * | 1981-01-22 | 1982-10-07 | Nippon Telegraph & Telephone Public Corp., Tokyo | Positives resistmaterial und verfahren zur herstellung eines musters daraus |
| DE3232498A1 (de) * | 1982-09-01 | 1984-03-01 | Philips Patentverwaltung Gmbh, 2000 Hamburg | Maske fuer die mustererzeugung in lackschichten mittels roentgenstrahllithographie und verfahren zu ihrer herstellung |
| DE3421773A1 (de) * | 1983-07-27 | 1985-02-07 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum herstellen von masshaltigen strukturen mit hohem aspektverhaeltnis im 1 (pfeil abwaerts)/(pfeil abwaerts)um-bereich und darunter fuer die mikroelektronik und anwendung dieses verfahrens zur herstellung einer roentgenabsorbermaske |
Non-Patent Citations (4)
| Title |
|---|
| DD-Z.: J. Inf. Rec. Mat. 15(1987)2, S. 107-115 * |
| Research Disclosure Nov. 1985, S. 565, Nr. 25909 * |
| US-Z.: J. Vac. Sci. Tec. 16(6), Nov./Dec. 1979, S. 1965-1967 * |
| US-Z.: Solid State Techn. Sept. 1984, S. 192-199 * |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3915650A1 (de) * | 1989-05-12 | 1990-11-15 | Siemens Ag | Verfahren zur strukturierung einer auf einem halbleiterschichtaufbau angeordneten schicht |
| US5099284A (en) * | 1989-08-28 | 1992-03-24 | Eastman Kodak Company | Master sheet and drum assembly |
| DE19743554C2 (de) * | 1996-11-30 | 2000-10-12 | Lg Semicon Co Ltd | Verfahren zum Herstellen einer Röntgenstrahlmaske |
| US7090948B2 (en) | 2001-11-16 | 2006-08-15 | Infineon Technologies Ag | Reflection mask and method for fabricating the reflection mask |
| DE10156366B4 (de) * | 2001-11-16 | 2007-01-11 | Infineon Technologies Ag | Reflexionsmaske und Verfahren zur Herstellung der Reflexionsmaske |
| US7078134B2 (en) | 2002-05-21 | 2006-07-18 | Infineon Technologies Ag | Photolithographic mask having a structure region covered by a thin protective coating of only a few atomic layers and methods for the fabrication of the mask including ALCVD to form the thin protective coating |
| DE10223113B4 (de) * | 2002-05-21 | 2007-09-13 | Infineon Technologies Ag | Verfahren zur Herstellung einer photolithographischen Maske |
| DE10345476A1 (de) * | 2003-09-30 | 2005-05-12 | Infineon Technologies Ag | Lithographische Maske und Verfahren zum Bedecken einer Maskenschicht |
| DE10345476B4 (de) * | 2003-09-30 | 2006-08-31 | Infineon Technologies Ag | Lithographische Maske und Verfahren zum Bedecken einer Maskenschicht |
| US7405024B2 (en) | 2003-09-30 | 2008-07-29 | Infineon Technologies Ag | Lithographic mask, and method for covering a mask layer |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH01161718A (ja) | 1989-06-26 |
| DE3842481C2 (enrdf_load_stackoverflow) | 1992-12-24 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OP8 | Request for examination as to paragraph 44 patent law | ||
| D2 | Grant after examination | ||
| 8364 | No opposition during term of opposition | ||
| 8320 | Willingness to grant licences declared (paragraph 23) | ||
| 8339 | Ceased/non-payment of the annual fee |