DE3838962C2 - - Google Patents

Info

Publication number
DE3838962C2
DE3838962C2 DE3838962A DE3838962A DE3838962C2 DE 3838962 C2 DE3838962 C2 DE 3838962C2 DE 3838962 A DE3838962 A DE 3838962A DE 3838962 A DE3838962 A DE 3838962A DE 3838962 C2 DE3838962 C2 DE 3838962C2
Authority
DE
Germany
Prior art keywords
electrode
control signal
arrangement according
thyristor
semiconductor arrangement
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE3838962A
Other languages
German (de)
English (en)
Other versions
DE3838962A1 (de
Inventor
Satoshi Itami Hyogo Jp Mori
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP62292707A external-priority patent/JPH01133413A/ja
Priority claimed from JP30808187A external-priority patent/JPH01147914A/ja
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of DE3838962A1 publication Critical patent/DE3838962A1/de
Application granted granted Critical
Publication of DE3838962C2 publication Critical patent/DE3838962C2/de
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/211—Gated diodes
    • H10D12/212—Gated diodes having PN junction gates, e.g. field controlled diodes
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/10—Modifications for increasing the maximum permissible switched voltage
    • H03K17/107—Modifications for increasing the maximum permissible switched voltage in composite switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/567—Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
    • H10D84/401—Combinations of FETs or IGBTs with BJTs

Landscapes

  • Electronic Switches (AREA)
DE3838962A 1987-11-18 1988-11-17 Zusammengesetzte halbleiteranordnung Granted DE3838962A1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP62292707A JPH01133413A (ja) 1987-11-18 1987-11-18 複合形半導体装置
JP30808187A JPH01147914A (ja) 1987-12-03 1987-12-03 複合形半導体装置の駆動回路

Publications (2)

Publication Number Publication Date
DE3838962A1 DE3838962A1 (de) 1989-06-08
DE3838962C2 true DE3838962C2 (OSRAM) 1991-07-18

Family

ID=26559103

Family Applications (1)

Application Number Title Priority Date Filing Date
DE3838962A Granted DE3838962A1 (de) 1987-11-18 1988-11-17 Zusammengesetzte halbleiteranordnung

Country Status (2)

Country Link
US (1) US4945266A (OSRAM)
DE (1) DE3838962A1 (OSRAM)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2657736A1 (fr) * 1990-01-31 1991-08-02 Sgs Thomson Microelectronics Circuit a resistance variable commandee en tension.
DE4004186A1 (de) * 1990-02-12 1991-08-14 Siemens Ag Horizontalablenkstufe
JPH0575110A (ja) * 1991-09-13 1993-03-26 Fuji Electric Co Ltd 半導体装置
JP2778862B2 (ja) * 1991-10-14 1998-07-23 三菱電機株式会社 トランジスタ回路
JPH081953B2 (ja) * 1992-01-16 1996-01-10 財団法人半導体研究振興会 Ｍｏｓ複合静電誘導サイリスタ
DE19507072A1 (de) * 1995-03-01 1996-09-05 Bosch Gmbh Robert Schaltung zum Ein- und Ausschalten einer elektrischen Last
DE19943785A1 (de) * 1998-09-25 2000-03-30 Siemens Ag Elektronische Schalteinrichtung mit mindestens zwei Halbleiterbauelementen
DE19902520B4 (de) 1999-01-22 2005-10-06 Siemens Ag Hybrid-Leistungs-MOSFET
DE19926109B4 (de) * 1999-06-08 2004-08-19 Infineon Technologies Ag Leistungsschalter
JP4354069B2 (ja) * 2000-02-08 2009-10-28 日本碍子株式会社 逆導通機能を有する半導体装置
DE10062026A1 (de) * 2000-12-13 2002-07-04 Siemens Ag Elektronische Schalteinrichtung
DE10101744C1 (de) * 2001-01-16 2002-08-08 Siemens Ag Elektronische Schalteinrichtung und Betriebsverfahren
JP5317413B2 (ja) * 2007-02-06 2013-10-16 株式会社東芝 半導体スイッチおよび当該半導体スイッチを適用した電力変換装置
US7777553B2 (en) * 2008-04-08 2010-08-17 Infineon Technologies Austria Ag Simplified switching circuit
US9455697B2 (en) * 2012-09-28 2016-09-27 Infineon Technologies Austria Ag Switch circuit with a first transistor device and a second transistor device connected in series
US9331068B2 (en) 2013-10-30 2016-05-03 United Silicon Carbide, Inc. Hybrid wide-bandgap semiconductor bipolar switches
US9148139B2 (en) 2014-01-13 2015-09-29 United Silicon Carbide, Inc. Monolithically integrated cascode switches
JP6223918B2 (ja) 2014-07-07 2017-11-01 株式会社東芝 半導体装置
US10290566B2 (en) * 2014-09-23 2019-05-14 Infineon Technologies Austria Ag Electronic component
US9793260B2 (en) * 2015-08-10 2017-10-17 Infineon Technologies Austria Ag System and method for a switch having a normally-on transistor and a normally-off transistor
US9564891B1 (en) 2015-10-28 2017-02-07 Crydom, Inc. Low conducted emission solid state switch
US9871510B1 (en) 2016-08-24 2018-01-16 Power Integrations, Inc. Clamp for a hybrid switch
US11764209B2 (en) * 2020-10-19 2023-09-19 MW RF Semiconductors, LLC Power semiconductor device with forced carrier extraction and method of manufacture

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4663547A (en) * 1981-04-24 1987-05-05 General Electric Company Composite circuit for power semiconductor switching
JPS61288616A (ja) * 1985-06-17 1986-12-18 Fuji Electric Co Ltd 半導体装置
CH668667A5 (de) * 1985-11-15 1989-01-13 Bbc Brown Boveri & Cie Leistungshalbleitermodul.
JPS62159515A (ja) * 1986-01-07 1987-07-15 Fuji Electric Co Ltd 複合半導体装置

Also Published As

Publication number Publication date
DE3838962A1 (de) 1989-06-08
US4945266A (en) 1990-07-31

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Legal Events

Date Code Title Description
OP8 Request for examination as to paragraph 44 patent law
D2 Grant after examination
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)
8339 Ceased/non-payment of the annual fee