DE3829912C2 - - Google Patents

Info

Publication number
DE3829912C2
DE3829912C2 DE3829912A DE3829912A DE3829912C2 DE 3829912 C2 DE3829912 C2 DE 3829912C2 DE 3829912 A DE3829912 A DE 3829912A DE 3829912 A DE3829912 A DE 3829912A DE 3829912 C2 DE3829912 C2 DE 3829912C2
Authority
DE
Germany
Prior art keywords
scintillator
radiation detector
layer
film
detector
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE3829912A
Other languages
German (de)
English (en)
Other versions
DE3829912A1 (de
Inventor
Tetsuhiko Tokio/Tokyo Jp Takahashi
Hiroshi Matsudo Chiba Jp Takeuchi
Toshikazu Kokubunji Tokio/Tokyo Jp Shimada
Haruo Hino Tokio/Tokio Jp Itoh
Tadaaki Koganei Tokio/Tokyo Jp Hirai
Kenji Tokio/Tokyo Jp Maio
Kenichi Houya Tokio/Tokyo Jp Okajima
Minoru Tokio/Tokyo Jp Yoshida
Hideaki Tokorozawa Saitama Jp Yamamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP62220115A external-priority patent/JP2594966B2/ja
Priority claimed from JP62234805A external-priority patent/JPS6478185A/ja
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of DE3829912A1 publication Critical patent/DE3829912A1/de
Application granted granted Critical
Publication of DE3829912C2 publication Critical patent/DE3829912C2/de
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/20—Measuring radiation intensity with scintillation detectors
    • G01T1/2018—Scintillation-photodiode combinations
    • G01T1/20183—Arrangements for preventing or correcting crosstalk, e.g. optical or electrical arrangements for correcting crosstalk
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/222—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN heterojunction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/29—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to radiation having very short wavelengths, e.g. X-rays, gamma-rays or corpuscular radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/162—Non-monocrystalline materials, e.g. semiconductor particles embedded in insulating materials
    • H10F77/166—Amorphous semiconductors
    • H10F77/1662—Amorphous semiconductors including only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • H10F77/496—Luminescent members, e.g. fluorescent sheets
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells

Landscapes

  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Molecular Biology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Measurement Of Radiation (AREA)
  • Light Receiving Elements (AREA)
DE3829912A 1987-09-04 1988-09-02 Mehrelement-strahlungsdetektor Granted DE3829912A1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP62220115A JP2594966B2 (ja) 1987-09-04 1987-09-04 放射線検出素子ブロック及びその製造方法
JP62234805A JPS6478185A (en) 1987-09-21 1987-09-21 Radiation detecting element

Publications (2)

Publication Number Publication Date
DE3829912A1 DE3829912A1 (de) 1989-03-16
DE3829912C2 true DE3829912C2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1993-05-13

Family

ID=26523546

Family Applications (1)

Application Number Title Priority Date Filing Date
DE3829912A Granted DE3829912A1 (de) 1987-09-04 1988-09-02 Mehrelement-strahlungsdetektor

Country Status (2)

Country Link
US (1) US4982095A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE (1) DE3829912A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4435105A1 (de) * 1994-09-30 1996-04-04 Siemens Ag Röntgendiagnostikeinrichtung mit einem Festkörperbildwandler
DE19923372A1 (de) * 1999-05-21 2000-07-13 Siemens Ag Verfahren zum Herstellen eines Strahlendetektors und Kollimatorblech eines Strahlendetektors

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5196702A (en) * 1987-10-21 1993-03-23 Hitachi, Ltd. Photo-sensor and method for operating the same
US5041729A (en) * 1987-10-28 1991-08-20 Hitachi, Ltd. Radiation detector and manufacturing process thereof
US4982096A (en) * 1988-01-06 1991-01-01 Hitachi Medical Corporation Multi-element radiation detector
US5262649A (en) * 1989-09-06 1993-11-16 The Regents Of The University Of Michigan Thin-film, flat panel, pixelated detector array for real-time digital imaging and dosimetry of ionizing radiation
EP1167999A1 (en) * 1989-09-06 2002-01-02 University of Michigan Multi-element-amorphous-silicon-detector-array for real-time imaging and dosimetry of megavoltage photons and diagnostic x-rays
CA2034118A1 (en) * 1990-02-09 1991-08-10 Nang Tri Tran Solid state radiation detector
US5171998A (en) * 1990-06-14 1992-12-15 Engdahl John C Gamma ray imaging detector
DE69221513T2 (de) * 1991-02-07 1998-03-26 Toshiba Kawasaki Kk Röntgenstrahl-Computer-Tomograph mit Bilddatenerfassungsschaltung zur Ausführung von Hochgeschwindigkeits-Datenerfassung
DE9107256U1 (de) * 1991-06-12 1991-08-08 Siemens AG, 80333 München Röntgen-Belichtungsautomat
US5254480A (en) * 1992-02-20 1993-10-19 Minnesota Mining And Manufacturing Company Process for producing a large area solid state radiation detector
US5463225A (en) * 1992-06-01 1995-10-31 General Electric Company Solid state radiation imager with high integrity barrier layer and method of fabricating
JPH0618670A (ja) * 1992-06-30 1994-01-28 Hitachi Medical Corp 放射線検出器
US5401668A (en) * 1993-09-02 1995-03-28 General Electric Company Method for fabrication solid state radiation imager having improved scintillator adhesion
DE19643644C1 (de) * 1996-10-22 1998-04-09 Siemens Ag Verfahren zur Herstellung eines Strahlungsdetektorarrays und Verwendung eines solchen Strahlungsdetektorarrays
US5936230A (en) * 1996-11-19 1999-08-10 Xerox Corporation High light collection X-ray image sensor array
CN1256596C (zh) 1997-02-14 2006-05-17 浜松光子学株式会社 放射线检测元件及其制造方法
EP0932053B1 (en) 1997-02-14 2002-01-09 Hamamatsu Photonics K.K. Radiation detection device and method of producing the same
DE19729413C1 (de) * 1997-07-09 1998-11-19 Siemens Ag Verfahren zum Herstellen eines Flachbildverstärkers und somit hergestellter Flachbildverstärker
JP4094768B2 (ja) * 1999-05-14 2008-06-04 富士フイルム株式会社 放射線画像検出装置
DE10033613A1 (de) * 2000-07-11 2002-01-31 Siemens Ag Röntgen-Detektor
DE10054680B4 (de) * 2000-11-03 2007-04-19 Siemens Ag Verfahren zur Herstellung eines zweidimensionalen Detektorarrays zur Detektion elektromagnetischer Strahlung
WO2006114716A2 (en) * 2005-04-26 2006-11-02 Koninklijke Philips Electronics, N.V. Double decker detector for spectral ct
EP1877832B1 (en) * 2005-04-26 2018-02-21 Koninklijke Philips N.V. Detector array for spectral ct
DE102005045594A1 (de) * 2005-09-23 2007-03-29 Siemens Ag Verfahren zur Herstellung eines Detektors und Detektor
CN104538459A (zh) * 2006-04-25 2015-04-22 皇家飞利浦电子股份有限公司 采用(bi) cmos工艺的雪崩光电二极管的实现
US8373132B2 (en) * 2009-02-06 2013-02-12 Koninklijke Philips Electronics N. V. Radiation detector with a stack of scintillator elements and photodiode arrays
WO2010142036A1 (en) * 2009-06-12 2010-12-16 Karim Karim S Radiation detector with integrated readout
FR2948379B1 (fr) 2009-07-21 2011-08-19 Saint Gobain Cristaux Et Detecteurs Scintillateur en halogenure de terre rare revetu d'un absorbeur ou reflecteur de lumiere

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3936645A (en) * 1974-03-25 1976-02-03 Radiologic Sciences, Inc. Cellularized Luminescent structures
JPS57172273A (en) * 1981-04-17 1982-10-23 Toshiba Corp Radiation detector
US4689487A (en) * 1984-09-03 1987-08-25 Kabushiki Kaisha Toshiba Radiographic image detection apparatus
GB2167279A (en) * 1984-11-15 1986-05-21 Ian Redmayne Radiation imaging
EP0208225B1 (de) * 1985-07-12 1990-03-28 Siemens Aktiengesellschaft Röntgendetektorsystem
US4733088A (en) * 1985-09-02 1988-03-22 Hitachi, Ltd. Radiation detector
JPS6271881A (ja) * 1985-09-26 1987-04-02 Toshiba Corp 放射線検出器
EP0275446A1 (de) * 1986-12-19 1988-07-27 Heimann GmbH Röntgenstrahlendetektor
KR940007852A (ko) * 1992-09-16 1994-04-28 윤종용 씨디-롬 시스템의 디지탈 노이즈 음 제거회로

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4435105A1 (de) * 1994-09-30 1996-04-04 Siemens Ag Röntgendiagnostikeinrichtung mit einem Festkörperbildwandler
DE4435105C2 (de) * 1994-09-30 2003-07-24 Siemens Ag Röntgendiagnostikeinrichtung mit einem Festkörperbildwandler und Verfahren zu deren Betrieb
DE19923372A1 (de) * 1999-05-21 2000-07-13 Siemens Ag Verfahren zum Herstellen eines Strahlendetektors und Kollimatorblech eines Strahlendetektors

Also Published As

Publication number Publication date
DE3829912A1 (de) 1989-03-16
US4982095A (en) 1991-01-01

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Legal Events

Date Code Title Description
OP8 Request for examination as to paragraph 44 patent law
8128 New person/name/address of the agent

Representative=s name: STREHL, P., DIPL.-ING. DIPL.-WIRTSCH.-ING. SCHUEBE

D2 Grant after examination
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee