DE3827961A1 - Halbleiterlaser - Google Patents

Halbleiterlaser

Info

Publication number
DE3827961A1
DE3827961A1 DE3827961A DE3827961A DE3827961A1 DE 3827961 A1 DE3827961 A1 DE 3827961A1 DE 3827961 A DE3827961 A DE 3827961A DE 3827961 A DE3827961 A DE 3827961A DE 3827961 A1 DE3827961 A1 DE 3827961A1
Authority
DE
Germany
Prior art keywords
strip
layer
shaped recess
laser
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE3827961A
Other languages
German (de)
English (en)
Other versions
DE3827961C2 (https=
Inventor
Yutaka Mihashi
Yutaka Nagai
Kenji Ikeda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of DE3827961A1 publication Critical patent/DE3827961A1/de
Application granted granted Critical
Publication of DE3827961C2 publication Critical patent/DE3827961C2/de
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2237—Buried stripe structure with a non-planar active layer

Landscapes

  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
DE3827961A 1987-08-19 1988-08-17 Halbleiterlaser Granted DE3827961A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62205764A JP2553580B2 (ja) 1987-08-19 1987-08-19 半導体レ−ザ装置

Publications (2)

Publication Number Publication Date
DE3827961A1 true DE3827961A1 (de) 1989-03-02
DE3827961C2 DE3827961C2 (https=) 1993-02-18

Family

ID=16512281

Family Applications (1)

Application Number Title Priority Date Filing Date
DE3827961A Granted DE3827961A1 (de) 1987-08-19 1988-08-17 Halbleiterlaser

Country Status (4)

Country Link
US (1) US4841535A (https=)
JP (1) JP2553580B2 (https=)
DE (1) DE3827961A1 (https=)
NL (1) NL8802011A (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0627799A1 (en) * 1993-06-04 1994-12-07 Sharp Kabushiki Kaisha Semiconductor light-emitting device with third cladding layer

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02253682A (ja) * 1989-03-27 1990-10-12 Mitsubishi Electric Corp 半導体レーザ
JPH03127891A (ja) * 1989-10-13 1991-05-30 Mitsubishi Electric Corp 半導体レーザ装置
US5058120A (en) * 1990-02-28 1991-10-15 Kabushiki Kaisha Toshiba Visible light emitting semiconductor laser with inverse mesa-shaped groove section
JPH0461292A (ja) * 1990-06-28 1992-02-27 Mitsubishi Electric Corp 半導体レーザ

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2626775A1 (de) * 1975-06-23 1976-12-30 Xerox Corp Diodenlaser mit heterouebergang
DE3127618A1 (de) * 1980-07-16 1982-05-06 Sony Corp., Tokyo "halbleiterlaser und verfahren zu seiner herstellung"
EP0155152A2 (en) * 1984-03-13 1985-09-18 Mitsubishi Denki Kabushiki Kaisha A semiconductor laser

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57147292A (en) * 1981-03-06 1982-09-11 Hitachi Ltd Semiconductor laser and manufacture thereof
JPS60217689A (ja) * 1984-04-13 1985-10-31 Oki Electric Ind Co Ltd 半導体発光素子の製造方法
JPS6252984A (ja) * 1985-09-02 1987-03-07 Toshiba Corp 自己整合電流狭窄型半導体発光素子

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2626775A1 (de) * 1975-06-23 1976-12-30 Xerox Corp Diodenlaser mit heterouebergang
DE3127618A1 (de) * 1980-07-16 1982-05-06 Sony Corp., Tokyo "halbleiterlaser und verfahren zu seiner herstellung"
EP0155152A2 (en) * 1984-03-13 1985-09-18 Mitsubishi Denki Kabushiki Kaisha A semiconductor laser
JPS60192380A (ja) * 1984-03-13 1985-09-30 Mitsubishi Electric Corp 半導体レ−ザ装置
US4667332A (en) * 1984-03-13 1987-05-19 Mitsubishi Denki Kabushiki Kaisha Semiconductor laser element suitable for production by a MO-CVD method

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0627799A1 (en) * 1993-06-04 1994-12-07 Sharp Kabushiki Kaisha Semiconductor light-emitting device with third cladding layer
US5516723A (en) * 1993-06-04 1996-05-14 Sharp Kabushiki Kaisha Semiconductor light-emitting device capable of having good stability in fundamental mode of oscillation, decreasing current leakage, and lowering oscillation threshold limit, and method of making the same
US5717709A (en) * 1993-06-04 1998-02-10 Sharp Kabushiki Kaisha Semiconductor light-emitting device capable of having good stability in fundamental mode of oscillation, decreasing current leakage, and lowering oscillation threshold limit, and method of making the same

Also Published As

Publication number Publication date
DE3827961C2 (https=) 1993-02-18
NL8802011A (nl) 1989-03-16
US4841535A (en) 1989-06-20
JPS6448486A (en) 1989-02-22
JP2553580B2 (ja) 1996-11-13

Similar Documents

Publication Publication Date Title
DE3779775T2 (de) Halbleiterlaser mit streifenfoermiger mesa-wellenleiterstruktur und dessen herstellungsverfahren.
DE3787769T2 (de) Halbleiterlaservorrichtung.
DE60224273T2 (de) Mehrstrahlhalbleiterlasereinrichtung
DE69027368T2 (de) Halbleiterlaser und Verfahren zur Herstellung desselben
DE3924197C2 (de) Halbleiterlaser
DE68908373T2 (de) Herstellungsverfahren für einen Halbleiterlaser mit nichtabsorbierender Spiegelstruktur.
DE4429772C2 (de) Verfahren zum Herstellen einer integrierten Modulator-Halbleiterlaservorrichtung
DE69432345T2 (de) Halbleiterdiodenlaser
DE68920571T2 (de) Halbleiterlaser-Vorrichtung und Verfahren zu ihrer Herstellung.
DE3923980A1 (de) Halbleiterlaser und verfahren zu seiner herstellung
DE69926856T2 (de) Lichtemittierende Halbleitervorrichtung und Herstellungsverfahren
DE2643503B2 (de) Verfahren zur Herstellung eines Injektionslasers
DE2701102C3 (de) Halbleiter-Injektionslaser
DE3782704T2 (de) Licht emittierende halbleitervorrichtung und verfahren zu deren herstellung.
DE2920454C2 (de) Halbleiterlaser und Verfahren zu dessen Herstellung
DE69026972T2 (de) Halbleiterlaservorrichtung
DE4116530A1 (de) Laserdiodenaufbau und verfahren zur herstellung desselben
DE3650133T2 (de) Verfahren zur Herstellung eines Halbleiterlasers mit versenktem Heteroübergang.
DE69319317T2 (de) Halbleiterlaser und Herstellungsverfahren
DE3788841T2 (de) Halbleiterlaservorrichtung und Verfahren zur Herstellung derselben.
DE3020251C2 (https=)
DE69205716T2 (de) Quanten-Faden-Laser.
DE3714512A1 (de) Halbleiterlaser
DE4010889A1 (de) Verfahren zum herstellen einer vergrabenen laserdiode mit heterostruktur
DE3827961A1 (de) Halbleiterlaser

Legal Events

Date Code Title Description
OP8 Request for examination as to paragraph 44 patent law
8125 Change of the main classification

Ipc: H01S 3/19

D2 Grant after examination
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)
8339 Ceased/non-payment of the annual fee