DE69205716T2 - Quanten-Faden-Laser. - Google Patents

Quanten-Faden-Laser.

Info

Publication number
DE69205716T2
DE69205716T2 DE69205716T DE69205716T DE69205716T2 DE 69205716 T2 DE69205716 T2 DE 69205716T2 DE 69205716 T DE69205716 T DE 69205716T DE 69205716 T DE69205716 T DE 69205716T DE 69205716 T2 DE69205716 T2 DE 69205716T2
Authority
DE
Germany
Prior art keywords
thread laser
quantum
quantum thread
laser
thread
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69205716T
Other languages
English (en)
Other versions
DE69205716D1 (de
Inventor
Haruhisa Takiguchi
Hiroaki Kudo
Mototaka Taneya
Satoshi Sugahara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Optoelectronics Technology Research Laboratory
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp, Optoelectronics Technology Research Laboratory filed Critical Sharp Corp
Publication of DE69205716D1 publication Critical patent/DE69205716D1/de
Application granted granted Critical
Publication of DE69205716T2 publication Critical patent/DE69205716T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/341—Structures having reduced dimensionality, e.g. quantum wires
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1228—DFB lasers with a complex coupled grating, e.g. gain or loss coupling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2238—Buried stripe structure with a terraced structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2272—Buried mesa structure ; Striped active layer grown by a mask induced selective growth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
DE69205716T 1991-03-28 1992-03-27 Quanten-Faden-Laser. Expired - Fee Related DE69205716T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3064323A JP2799372B2 (ja) 1991-03-28 1991-03-28 量子細線レーザ及びその製造方法

Publications (2)

Publication Number Publication Date
DE69205716D1 DE69205716D1 (de) 1995-12-07
DE69205716T2 true DE69205716T2 (de) 1996-05-02

Family

ID=13254918

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69205716T Expired - Fee Related DE69205716T2 (de) 1991-03-28 1992-03-27 Quanten-Faden-Laser.

Country Status (4)

Country Link
US (1) US5280493A (de)
EP (1) EP0507516B1 (de)
JP (1) JP2799372B2 (de)
DE (1) DE69205716T2 (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3257034B2 (ja) * 1992-06-03 2002-02-18 ソニー株式会社 化合物半導体装置とその製造方法
JPH06132608A (ja) * 1992-10-20 1994-05-13 Sony Corp 半導体レーザ及びその製造方法
US5363394A (en) * 1993-08-06 1994-11-08 At&T Bell Laboratories Quantum wire laser
EP0665578B1 (de) * 1993-11-25 2002-02-20 Nippon Telegraph And Telephone Corporation Halbleiterstruktur und Herstellungsverfahren
KR970003750B1 (en) * 1993-12-14 1997-03-21 Korea Electronics Telecomm Manufacture for quantum wire semiconductor laser diode
US6039803A (en) * 1996-06-28 2000-03-21 Massachusetts Institute Of Technology Utilization of miscut substrates to improve relaxed graded silicon-germanium and germanium layers on silicon
JP3882539B2 (ja) * 2000-07-18 2007-02-21 ソニー株式会社 半導体発光素子およびその製造方法、並びに画像表示装置
KR100446615B1 (ko) 2001-10-09 2004-09-04 삼성전자주식회사 반도체 레이저 다이오드 및 그 제조방법
DE10324264B4 (de) * 2003-03-06 2007-01-18 Universität Regensburg Quantendrahtemitter mit Intersubbandübergängen
JP4613304B2 (ja) * 2004-09-07 2011-01-19 独立行政法人産業技術総合研究所 量子ナノ構造半導体レーザ
JP2006190782A (ja) * 2005-01-05 2006-07-20 Fujitsu Ltd 光半導体装置及びその製造方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60113488A (ja) * 1983-11-24 1985-06-19 Nec Corp １次元量子サイズ効果を有する素子の作製方法
JPS613487A (ja) * 1984-06-15 1986-01-09 Fujitsu Ltd 量子細線レ−ザの作製方法
JPH0669110B2 (ja) * 1985-03-04 1994-08-31 株式会社日立製作所 半導体レ−ザ装置
JPS62186584A (ja) * 1986-02-12 1987-08-14 Matsushita Electric Ind Co Ltd 半導体素子の製造法
JPH0656907B2 (ja) * 1986-03-31 1994-07-27 日本電信電話株式会社 半導体発光素子の製造法
JP2531655B2 (ja) * 1987-01-16 1996-09-04 株式会社日立製作所 半導体装置
JPS6421986A (en) * 1987-07-17 1989-01-25 Nippon Telegraph & Telephone Manufacture of quantum fine line laser diode of current-injection type having buried structure
CA1315865C (en) * 1988-02-09 1993-04-06 Elyahou Kapon Semiconductor super lattice heterostructure fabrication methods, structures and devices
JPH0268482A (ja) * 1988-08-31 1990-03-07 Iseki & Co Ltd 穀粒乾燥機の熱風発生装置
JP2687495B2 (ja) * 1988-10-28 1997-12-08 日本電気株式会社 半導体レーザの製造方法
JPH03169091A (ja) * 1989-11-28 1991-07-22 Mitsubishi Electric Corp 量子細線の製造方法
US5070510A (en) * 1989-12-12 1991-12-03 Sharp Kabushiki Kaisha Semiconductor laser device

Also Published As

Publication number Publication date
DE69205716D1 (de) 1995-12-07
JPH04299881A (ja) 1992-10-23
EP0507516B1 (de) 1995-11-02
EP0507516A1 (de) 1992-10-07
US5280493A (en) 1994-01-18
JP2799372B2 (ja) 1998-09-17

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8328 Change in the person/name/address of the agent

Free format text: PATENTANWAELTE MUELLER & HOFFMANN, 81667 MUENCHEN

8327 Change in the person/name/address of the patent owner

Owner name: SHARP K.K., OSAKA, JP

8339 Ceased/non-payment of the annual fee