DE3789999T2 - Photoresistverfahren zum reaktiven Ionenätzen von Metallmustern für Halbleiterbauelemente. - Google Patents

Photoresistverfahren zum reaktiven Ionenätzen von Metallmustern für Halbleiterbauelemente.

Info

Publication number
DE3789999T2
DE3789999T2 DE3789999T DE3789999T DE3789999T2 DE 3789999 T2 DE3789999 T2 DE 3789999T2 DE 3789999 T DE3789999 T DE 3789999T DE 3789999 T DE3789999 T DE 3789999T DE 3789999 T2 DE3789999 T2 DE 3789999T2
Authority
DE
Germany
Prior art keywords
photoresist
layer
release agent
reactive ion
ion etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE3789999T
Other languages
German (de)
English (en)
Other versions
DE3789999D1 (de
Inventor
Hans Adolf Protschka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of DE3789999D1 publication Critical patent/DE3789999D1/de
Publication of DE3789999T2 publication Critical patent/DE3789999T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H10P76/2041—
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • H10P14/683—
    • H10P50/267—
    • H10P50/268—
    • H10P76/2043—

Landscapes

  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Drying Of Semiconductors (AREA)
DE3789999T 1986-08-25 1987-07-07 Photoresistverfahren zum reaktiven Ionenätzen von Metallmustern für Halbleiterbauelemente. Expired - Fee Related DE3789999T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/900,467 US4778739A (en) 1986-08-25 1986-08-25 Photoresist process for reactive ion etching of metal patterns for semiconductor devices

Publications (2)

Publication Number Publication Date
DE3789999D1 DE3789999D1 (de) 1994-07-14
DE3789999T2 true DE3789999T2 (de) 1994-12-01

Family

ID=25412578

Family Applications (1)

Application Number Title Priority Date Filing Date
DE3789999T Expired - Fee Related DE3789999T2 (de) 1986-08-25 1987-07-07 Photoresistverfahren zum reaktiven Ionenätzen von Metallmustern für Halbleiterbauelemente.

Country Status (4)

Country Link
US (1) US4778739A (OSRAM)
EP (1) EP0257255B1 (OSRAM)
JP (1) JPS6355937A (OSRAM)
DE (1) DE3789999T2 (OSRAM)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4871630A (en) * 1986-10-28 1989-10-03 International Business Machines Corporation Mask using lithographic image size reduction
JPH01169926A (ja) * 1987-12-24 1989-07-05 Toshiba Corp アライメント方法
WO1990012051A1 (en) * 1989-03-30 1990-10-18 Brewer Science, Inc. Base-soluble polyimide release layers for use in microlithographic processing
US5234990A (en) * 1992-02-12 1993-08-10 Brewer Science, Inc. Polymers with intrinsic light-absorbing properties for anti-reflective coating applications in deep ultraviolet microlithography
US5726102A (en) * 1996-06-10 1998-03-10 Vanguard International Semiconductor Corporation Method for controlling etch bias in plasma etch patterning of integrated circuit layers
US6294456B1 (en) 1998-11-27 2001-09-25 Taiwan Semiconductor Manufacturing Company Method of prefilling of keyhole at the top metal level with photoresist to prevent passivation damage even for a severe top metal rule
US6191046B1 (en) 1999-03-11 2001-02-20 Advanced Micro Devices, Inc. Deposition of an oxide layer to facilitate photoresist rework on polygate layer
US6210846B1 (en) 1999-08-13 2001-04-03 Advanced Micro Devices, Inc. Exposure during rework for enhanced resist removal
US6218085B1 (en) 1999-09-21 2001-04-17 Lucent Technologies Inc. Process for photoresist rework to avoid sodium incorporation
JP4544811B2 (ja) * 2002-05-09 2010-09-15 大日本印刷株式会社 エレクトロルミネッセント素子の製造方法
DE102005063335B4 (de) * 2005-03-31 2012-04-12 Globalfoundries Inc. Modell für eine fortschrittliche Prozesssteuerung, das eine Solloffsetgröße umfaßt
US7629259B2 (en) * 2005-06-21 2009-12-08 Lam Research Corporation Method of aligning a reticle for formation of semiconductor devices
TWI302349B (en) * 2006-01-04 2008-10-21 Promos Technologies Inc Metal etching process and rework method thereof
US8119492B2 (en) 2009-07-10 2012-02-21 United Microelectronics Corp. Dissolving precipates in alloy material in capacitor structure

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3985597A (en) * 1975-05-01 1976-10-12 International Business Machines Corporation Process for forming passivated metal interconnection system with a planar surface
US4292384A (en) * 1977-09-30 1981-09-29 Horizons Research Incorporated Gaseous plasma developing and etching process employing low voltage DC generation
US4367119A (en) * 1980-08-18 1983-01-04 International Business Machines Corporation Planar multi-level metal process with built-in etch stop
US4370405A (en) * 1981-03-30 1983-01-25 Hewlett-Packard Company Multilayer photoresist process utilizing an absorbant dye
US4362809A (en) * 1981-03-30 1982-12-07 Hewlett-Packard Company Multilayer photoresist process utilizing an absorbant dye
JPH0612452B2 (ja) * 1982-09-30 1994-02-16 ブリュ−ワ−・サイエンス・インコ−ポレイテッド 集積回路素子の製造方法
US4606931A (en) * 1983-06-27 1986-08-19 International Business Machines Corporation Lift-off masking method
US4464460A (en) * 1983-06-28 1984-08-07 International Business Machines Corporation Process for making an imaged oxygen-reactive ion etch barrier
DE3435750A1 (de) * 1984-09-28 1986-04-10 Siemens AG, 1000 Berlin und 8000 München Verfahren zum erzielen einer konstanten masshaltigkeit von leiterbahnen in integrierten schaltkreisen
US4618565A (en) * 1985-06-05 1986-10-21 Rca Corporation Absorptive layer for optical lithography
JPS6247045A (ja) * 1985-08-20 1987-02-28 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション ポリイミド組成物およびパタ−ンを有する膜の形成法

Also Published As

Publication number Publication date
EP0257255B1 (en) 1994-06-08
US4778739A (en) 1988-10-18
JPH0482178B2 (OSRAM) 1992-12-25
DE3789999D1 (de) 1994-07-14
JPS6355937A (ja) 1988-03-10
EP0257255A3 (en) 1990-09-26
EP0257255A2 (en) 1988-03-02

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee