DE3787500D1 - Isolierharz-Zusammensetzung und Halbleitervorrichtung unter deren Verwendung. - Google Patents
Isolierharz-Zusammensetzung und Halbleitervorrichtung unter deren Verwendung.Info
- Publication number
- DE3787500D1 DE3787500D1 DE87305975T DE3787500T DE3787500D1 DE 3787500 D1 DE3787500 D1 DE 3787500D1 DE 87305975 T DE87305975 T DE 87305975T DE 3787500 T DE3787500 T DE 3787500T DE 3787500 D1 DE3787500 D1 DE 3787500D1
- Authority
- DE
- Germany
- Prior art keywords
- same
- semiconductor device
- resin composition
- insulating resin
- insulating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000011342 resin composition Substances 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
- C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
- C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
- C08G73/1057—Polyimides containing other atoms than carbon, hydrogen, nitrogen or oxygen in the main chain
- C08G73/106—Polyimides containing other atoms than carbon, hydrogen, nitrogen or oxygen in the main chain containing silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
- H01B3/18—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances
- H01B3/30—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances plastics; resins; waxes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/312—Organic layers, e.g. photoresist
- H01L21/3121—Layers comprising organo-silicon compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Health & Medical Sciences (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Organic Chemistry (AREA)
- Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
- Formation Of Insulating Films (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP61158554A JPH0727966B2 (ja) | 1986-07-04 | 1986-07-04 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE3787500D1 true DE3787500D1 (de) | 1993-10-28 |
DE3787500T2 DE3787500T2 (de) | 1994-02-24 |
Family
ID=15674242
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE87305975T Expired - Lifetime DE3787500T2 (de) | 1986-07-04 | 1987-07-06 | Isolierharz-Zusammensetzung und Halbleitervorrichtung unter deren Verwendung. |
Country Status (5)
Country | Link |
---|---|
US (1) | US5132386A (de) |
EP (1) | EP0251828B1 (de) |
JP (1) | JPH0727966B2 (de) |
KR (1) | KR900005120B1 (de) |
DE (1) | DE3787500T2 (de) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4692205A (en) * | 1986-01-31 | 1987-09-08 | International Business Machines Corporation | Silicon-containing polyimides as oxygen etch stop and dual dielectric coatings |
US5268193A (en) * | 1988-06-28 | 1993-12-07 | Amoco Corporation | Low dielectric constant, low moisture uptake polyimides and copolyimides for interlevel dielectrics and substrate coatings |
US5094919A (en) * | 1988-06-30 | 1992-03-10 | Nippon Steel Chemical Co., Ltd. | Polyimide copolymers and process for preparing the same |
US5120573A (en) * | 1988-09-28 | 1992-06-09 | Hitachi, Ltd. | Process for producing metal/polyimide composite article |
JPH07102646B2 (ja) * | 1988-09-30 | 1995-11-08 | 株式会社日立製作所 | 金属とポリイミドの複合成形体 |
ATE131310T1 (de) * | 1988-12-21 | 1995-12-15 | Gore W L & Ass Gmbh | Elektrischer leiter, der mit einem polymer isoliert ist. |
FR2650828B1 (fr) * | 1989-08-08 | 1991-10-31 | Etu Mat Organ Technol Ava Cent | Compositions de precurseurs de polyimides et leurs applications |
US5252703A (en) * | 1990-06-01 | 1993-10-12 | Ube Industries, Ltd. | Polyimidosiloxane resin and composition thereof and method of applying same |
US5310862A (en) * | 1991-08-20 | 1994-05-10 | Toray Industries, Inc. | Photosensitive polyimide precursor compositions and process for preparing same |
US5940732A (en) | 1995-11-27 | 1999-08-17 | Semiconductor Energy Laboratory Co., | Method of fabricating semiconductor device |
US6294799B1 (en) * | 1995-11-27 | 2001-09-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of fabricating same |
FR2751962B1 (fr) * | 1996-08-02 | 1998-09-11 | Rhone Poulenc Fibres | Procede de purification de lactames |
US8716548B2 (en) | 2002-02-20 | 2014-05-06 | The Procter & Gamble Company | Disposable absorbent article designed to facilitate an easy change |
US20030158532A1 (en) | 2002-02-20 | 2003-08-21 | Magee Luke R. | Disposable absorbent article designed to facilitate an easy intuitive change |
JP2009111333A (ja) * | 2007-10-12 | 2009-05-21 | Panasonic Corp | 半導体装置 |
JP2014159551A (ja) * | 2013-01-28 | 2014-09-04 | Jnc Corp | 熱硬化性組成物、硬化膜および電子部品 |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3338859A (en) * | 1966-06-30 | 1967-08-29 | Dow Corning | Silicone polyimides |
US3492270A (en) * | 1969-01-21 | 1970-01-27 | Du Pont | Crosslinked polyamide-acid and polyimide polymers |
US3740305A (en) * | 1971-10-01 | 1973-06-19 | Gen Electric | Composite materials bonded with siloxane containing polyimides |
US4030948A (en) * | 1975-07-21 | 1977-06-21 | Abe Berger | Polyimide containing silicones as protective coating on semiconductor device |
US4051163A (en) * | 1975-07-21 | 1977-09-27 | Abe Berger | Polyimide containing silicones |
JPS53107285A (en) * | 1977-03-02 | 1978-09-19 | Hitachi Ltd | Production of wiring structural body |
US4299750A (en) * | 1979-05-03 | 1981-11-10 | Gulf Oil Corporation | Novel partially acetylene end-capped polyimide oligomers |
JPS56118421A (en) * | 1980-02-25 | 1981-09-17 | Nitto Electric Ind Co Ltd | Heat-shrinkable polyimide film and production thereof |
US4332708A (en) * | 1980-02-27 | 1982-06-01 | General Electric Company | Polycarboxylic acid/ester-diamine aqueous coating composition |
US4405770A (en) * | 1981-08-12 | 1983-09-20 | National Starch And Chemical Corporation | Novel polyimides, and polyamic acid and ester intermediates thereof |
US4485140A (en) * | 1983-09-21 | 1984-11-27 | E. I. Du Pont De Nemours And Company | Melt-fusible polyimides |
US4467000A (en) * | 1983-03-29 | 1984-08-21 | International Business Machines Corporation | Process for coating a substrate with polyimide |
US4520075A (en) * | 1983-09-02 | 1985-05-28 | Nitto Electric Industrial Co., Ltd. | Siloxane-modified polyimide precursor and polyimide |
US4535099A (en) * | 1984-04-03 | 1985-08-13 | Imi-Tech Corporation | Polyimide foam from mixture of silicon containing diamine and different aromatic diamine |
US4535115A (en) * | 1984-08-20 | 1985-08-13 | Gulf Oil Corporation | Method of preparation of polyimide acids |
US4524171A (en) * | 1984-08-20 | 1985-06-18 | Gulf Oil Corporation | Preparation of an aromatic polyimide acid by solution polymerization using propylene glycol methyl ether |
US4562100A (en) * | 1984-09-14 | 1985-12-31 | E. I. Du Pont De Nemours And Company | Polyimide coating compositions from diesterified anhydride and aromatic diamine |
US4689391A (en) * | 1984-12-21 | 1987-08-25 | General Electric Company | Process for making polyetherimides |
JPS62129316A (ja) * | 1985-07-16 | 1987-06-11 | Kanegafuchi Chem Ind Co Ltd | ポリイミド前駆体を部分的に閉環させた薄膜 |
JPH0768347B2 (ja) * | 1985-09-25 | 1995-07-26 | 株式会社日立製作所 | 有機ケイ素末端ポリイミド前駆体とポリイミドの製造方法 |
-
1986
- 1986-07-04 JP JP61158554A patent/JPH0727966B2/ja not_active Expired - Lifetime
-
1987
- 1987-07-04 KR KR1019870007149A patent/KR900005120B1/ko not_active IP Right Cessation
- 1987-07-06 EP EP87305975A patent/EP0251828B1/de not_active Expired - Lifetime
- 1987-07-06 DE DE87305975T patent/DE3787500T2/de not_active Expired - Lifetime
-
1989
- 1989-05-02 US US07/348,151 patent/US5132386A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0251828B1 (de) | 1993-09-22 |
JPS6314452A (ja) | 1988-01-21 |
DE3787500T2 (de) | 1994-02-24 |
JPH0727966B2 (ja) | 1995-03-29 |
KR900005120B1 (ko) | 1990-07-19 |
US5132386A (en) | 1992-07-21 |
EP0251828A1 (de) | 1988-01-07 |
KR880002254A (ko) | 1988-04-30 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |