DE3787500D1 - Isolierharz-Zusammensetzung und Halbleitervorrichtung unter deren Verwendung. - Google Patents

Isolierharz-Zusammensetzung und Halbleitervorrichtung unter deren Verwendung.

Info

Publication number
DE3787500D1
DE3787500D1 DE87305975T DE3787500T DE3787500D1 DE 3787500 D1 DE3787500 D1 DE 3787500D1 DE 87305975 T DE87305975 T DE 87305975T DE 3787500 T DE3787500 T DE 3787500T DE 3787500 D1 DE3787500 D1 DE 3787500D1
Authority
DE
Germany
Prior art keywords
same
semiconductor device
resin composition
insulating resin
insulating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE87305975T
Other languages
English (en)
Other versions
DE3787500T2 (de
Inventor
Hiroshi Yamazaki Works Suzuki
Shunichiroyamazaki Wo Uchimura
Hidetaka Hitachi Chemical Sato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Showa Denko Materials Co ltd
Original Assignee
Hitachi Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Chemical Co Ltd filed Critical Hitachi Chemical Co Ltd
Application granted granted Critical
Publication of DE3787500D1 publication Critical patent/DE3787500D1/de
Publication of DE3787500T2 publication Critical patent/DE3787500T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • C08G73/1057—Polyimides containing other atoms than carbon, hydrogen, nitrogen or oxygen in the main chain
    • C08G73/106—Polyimides containing other atoms than carbon, hydrogen, nitrogen or oxygen in the main chain containing silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
    • H01B3/18—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances
    • H01B3/30—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances plastics; resins; waxes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/312—Organic layers, e.g. photoresist
    • H01L21/3121—Layers comprising organo-silicon compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
DE87305975T 1986-07-04 1987-07-06 Isolierharz-Zusammensetzung und Halbleitervorrichtung unter deren Verwendung. Expired - Lifetime DE3787500T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61158554A JPH0727966B2 (ja) 1986-07-04 1986-07-04 半導体装置

Publications (2)

Publication Number Publication Date
DE3787500D1 true DE3787500D1 (de) 1993-10-28
DE3787500T2 DE3787500T2 (de) 1994-02-24

Family

ID=15674242

Family Applications (1)

Application Number Title Priority Date Filing Date
DE87305975T Expired - Lifetime DE3787500T2 (de) 1986-07-04 1987-07-06 Isolierharz-Zusammensetzung und Halbleitervorrichtung unter deren Verwendung.

Country Status (5)

Country Link
US (1) US5132386A (de)
EP (1) EP0251828B1 (de)
JP (1) JPH0727966B2 (de)
KR (1) KR900005120B1 (de)
DE (1) DE3787500T2 (de)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4692205A (en) * 1986-01-31 1987-09-08 International Business Machines Corporation Silicon-containing polyimides as oxygen etch stop and dual dielectric coatings
US5268193A (en) * 1988-06-28 1993-12-07 Amoco Corporation Low dielectric constant, low moisture uptake polyimides and copolyimides for interlevel dielectrics and substrate coatings
US5094919A (en) * 1988-06-30 1992-03-10 Nippon Steel Chemical Co., Ltd. Polyimide copolymers and process for preparing the same
US5120573A (en) * 1988-09-28 1992-06-09 Hitachi, Ltd. Process for producing metal/polyimide composite article
JPH07102646B2 (ja) * 1988-09-30 1995-11-08 株式会社日立製作所 金属とポリイミドの複合成形体
ES2080058T3 (es) * 1988-12-21 1996-02-01 Gore W L & Ass Gmbh Conductor electrico aislado mediante un polimero.
FR2650828B1 (fr) * 1989-08-08 1991-10-31 Etu Mat Organ Technol Ava Cent Compositions de precurseurs de polyimides et leurs applications
US5252703A (en) * 1990-06-01 1993-10-12 Ube Industries, Ltd. Polyimidosiloxane resin and composition thereof and method of applying same
US5310862A (en) * 1991-08-20 1994-05-10 Toray Industries, Inc. Photosensitive polyimide precursor compositions and process for preparing same
US5940732A (en) 1995-11-27 1999-08-17 Semiconductor Energy Laboratory Co., Method of fabricating semiconductor device
US6294799B1 (en) * 1995-11-27 2001-09-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of fabricating same
FR2751962B1 (fr) * 1996-08-02 1998-09-11 Rhone Poulenc Fibres Procede de purification de lactames
US8716548B2 (en) 2002-02-20 2014-05-06 The Procter & Gamble Company Disposable absorbent article designed to facilitate an easy change
US20030158532A1 (en) 2002-02-20 2003-08-21 Magee Luke R. Disposable absorbent article designed to facilitate an easy intuitive change
JP2009111333A (ja) * 2007-10-12 2009-05-21 Panasonic Corp 半導体装置
JP2014159551A (ja) * 2013-01-28 2014-09-04 Jnc Corp 熱硬化性組成物、硬化膜および電子部品

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3338859A (en) * 1966-06-30 1967-08-29 Dow Corning Silicone polyimides
US3492270A (en) * 1969-01-21 1970-01-27 Du Pont Crosslinked polyamide-acid and polyimide polymers
US3740305A (en) * 1971-10-01 1973-06-19 Gen Electric Composite materials bonded with siloxane containing polyimides
US4030948A (en) * 1975-07-21 1977-06-21 Abe Berger Polyimide containing silicones as protective coating on semiconductor device
US4051163A (en) * 1975-07-21 1977-09-27 Abe Berger Polyimide containing silicones
JPS53107285A (en) * 1977-03-02 1978-09-19 Hitachi Ltd Production of wiring structural body
US4299750A (en) * 1979-05-03 1981-11-10 Gulf Oil Corporation Novel partially acetylene end-capped polyimide oligomers
JPS56118421A (en) * 1980-02-25 1981-09-17 Nitto Electric Ind Co Ltd Heat-shrinkable polyimide film and production thereof
US4332708A (en) * 1980-02-27 1982-06-01 General Electric Company Polycarboxylic acid/ester-diamine aqueous coating composition
US4405770A (en) * 1981-08-12 1983-09-20 National Starch And Chemical Corporation Novel polyimides, and polyamic acid and ester intermediates thereof
US4485140A (en) * 1983-09-21 1984-11-27 E. I. Du Pont De Nemours And Company Melt-fusible polyimides
US4467000A (en) * 1983-03-29 1984-08-21 International Business Machines Corporation Process for coating a substrate with polyimide
US4520075A (en) * 1983-09-02 1985-05-28 Nitto Electric Industrial Co., Ltd. Siloxane-modified polyimide precursor and polyimide
US4535099A (en) * 1984-04-03 1985-08-13 Imi-Tech Corporation Polyimide foam from mixture of silicon containing diamine and different aromatic diamine
US4524171A (en) * 1984-08-20 1985-06-18 Gulf Oil Corporation Preparation of an aromatic polyimide acid by solution polymerization using propylene glycol methyl ether
US4535115A (en) * 1984-08-20 1985-08-13 Gulf Oil Corporation Method of preparation of polyimide acids
US4562100A (en) * 1984-09-14 1985-12-31 E. I. Du Pont De Nemours And Company Polyimide coating compositions from diesterified anhydride and aromatic diamine
US4689391A (en) * 1984-12-21 1987-08-25 General Electric Company Process for making polyetherimides
JPS62143929A (ja) * 1985-07-16 1987-06-27 Kanegafuchi Chem Ind Co Ltd ポリイミド前駆体薄膜
JPH0768347B2 (ja) * 1985-09-25 1995-07-26 株式会社日立製作所 有機ケイ素末端ポリイミド前駆体とポリイミドの製造方法

Also Published As

Publication number Publication date
EP0251828A1 (de) 1988-01-07
DE3787500T2 (de) 1994-02-24
EP0251828B1 (de) 1993-09-22
KR900005120B1 (ko) 1990-07-19
US5132386A (en) 1992-07-21
JPS6314452A (ja) 1988-01-21
KR880002254A (ko) 1988-04-30
JPH0727966B2 (ja) 1995-03-29

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