DE3786692D1 - Vorrichtung mit flachem suszeptor, der parallel zu einer referenzflaeche um eine achse lotrecht zu dieser flaeche rotiert. - Google Patents

Vorrichtung mit flachem suszeptor, der parallel zu einer referenzflaeche um eine achse lotrecht zu dieser flaeche rotiert.

Info

Publication number
DE3786692D1
DE3786692D1 DE8787200478T DE3786692T DE3786692D1 DE 3786692 D1 DE3786692 D1 DE 3786692D1 DE 8787200478 T DE8787200478 T DE 8787200478T DE 3786692 T DE3786692 T DE 3786692T DE 3786692 D1 DE3786692 D1 DE 3786692D1
Authority
DE
Germany
Prior art keywords
area
axis
rotates parallel
flat susceptor
reference area
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8787200478T
Other languages
English (en)
Other versions
DE3786692T2 (de
Inventor
Peter Michael Societe Frijlink
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of DE3786692D1 publication Critical patent/DE3786692D1/de
Application granted granted Critical
Publication of DE3786692T2 publication Critical patent/DE3786692T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/12—Substrate holders or susceptors
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE87200478T 1986-03-21 1987-03-16 Vorrichtung mit flachem Suszeptor, der parallel zu einer Referenzfläche um eine Achse lotrecht zu dieser Fläche rotiert. Expired - Lifetime DE3786692T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8604078A FR2596070A1 (fr) 1986-03-21 1986-03-21 Dispositif comprenant un suscepteur plan tournant parallelement a un plan de reference autour d'un axe perpendiculaire a ce plan

Publications (2)

Publication Number Publication Date
DE3786692D1 true DE3786692D1 (de) 1993-09-02
DE3786692T2 DE3786692T2 (de) 1994-02-17

Family

ID=9333382

Family Applications (1)

Application Number Title Priority Date Filing Date
DE87200478T Expired - Lifetime DE3786692T2 (de) 1986-03-21 1987-03-16 Vorrichtung mit flachem Suszeptor, der parallel zu einer Referenzfläche um eine Achse lotrecht zu dieser Fläche rotiert.

Country Status (5)

Country Link
US (1) US4860687A (de)
EP (1) EP0242898B1 (de)
JP (1) JPH0778276B2 (de)
DE (1) DE3786692T2 (de)
FR (1) FR2596070A1 (de)

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* Cited by examiner, † Cited by third party
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US4860687A (en) 1989-08-29
EP0242898A1 (de) 1987-10-28
FR2596070A1 (fr) 1987-09-25
JPH0778276B2 (ja) 1995-08-23
JPS62230982A (ja) 1987-10-09
DE3786692T2 (de) 1994-02-17
EP0242898B1 (de) 1993-07-28

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