DE3785957D1 - Strahlungsempfindlicher positivlack und zusammensetzung. - Google Patents

Strahlungsempfindlicher positivlack und zusammensetzung.

Info

Publication number
DE3785957D1
DE3785957D1 DE8787302576T DE3785957T DE3785957D1 DE 3785957 D1 DE3785957 D1 DE 3785957D1 DE 8787302576 T DE8787302576 T DE 8787302576T DE 3785957 T DE3785957 T DE 3785957T DE 3785957 D1 DE3785957 D1 DE 3785957D1
Authority
DE
Germany
Prior art keywords
radiation
composition
sensitive positive
positive varnish
varnish
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8787302576T
Other languages
English (en)
Other versions
DE3785957T2 (de
Inventor
Mutsuo Kataoka
Aguto Tokunaga
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toray Industries Inc
Original Assignee
Toray Industries Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toray Industries Inc filed Critical Toray Industries Inc
Application granted granted Critical
Publication of DE3785957D1 publication Critical patent/DE3785957D1/de
Publication of DE3785957T2 publication Critical patent/DE3785957T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/039Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/143Electron beam
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/167X-ray

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
DE8787302576T 1986-03-26 1987-03-25 Strahlungsempfindlicher positivlack und zusammensetzung. Expired - Fee Related DE3785957T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61065898A JPS62223750A (ja) 1986-03-26 1986-03-26 放射線感応ポジ型レジストおよび該レジスト組成物

Publications (2)

Publication Number Publication Date
DE3785957D1 true DE3785957D1 (de) 1993-07-01
DE3785957T2 DE3785957T2 (de) 1993-09-02

Family

ID=13300241

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8787302576T Expired - Fee Related DE3785957T2 (de) 1986-03-26 1987-03-25 Strahlungsempfindlicher positivlack und zusammensetzung.

Country Status (5)

Country Link
US (1) US4800151A (de)
EP (1) EP0239385B1 (de)
JP (1) JPS62223750A (de)
DE (1) DE3785957T2 (de)
HK (1) HK1002523A1 (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH087444B2 (ja) * 1989-01-26 1996-01-29 東レ株式会社 感放射線ポジ型レジスト
US6849377B2 (en) 1998-09-23 2005-02-01 E. I. Du Pont De Nemours And Company Photoresists, polymers and processes for microlithography
US6593058B1 (en) 1998-09-23 2003-07-15 E. I. Du Pont De Nemours And Company Photoresists, polymers and processes for microlithography
WO2001055789A2 (en) * 2000-01-25 2001-08-02 Infineon Technologies Ag Chemically amplified short wavelength resist
JP7172495B2 (ja) * 2018-11-22 2022-11-16 日本ゼオン株式会社 重合体及びポジ型レジスト組成物

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3425867A (en) * 1963-09-23 1969-02-04 Minnesota Mining & Mfg Electron beam recording medium with acid sensitive indicator and halogenated polymer coating
JPS5518638A (en) * 1978-07-27 1980-02-08 Chiyou Lsi Gijutsu Kenkyu Kumiai Ionized radiation sensitive positive type resist
EP0016679B1 (de) * 1979-03-09 1982-06-09 Thomson-Csf Substanzen für Photolacke, ihre Herstellung und positive Photolackschicht
JPS602234B2 (ja) * 1980-05-30 1985-01-19 本田技研工業株式会社 自動二輪車のパワ−ユニツト懸架装置におけるアンダ−ガ−ド装置
CA1164261A (en) * 1981-04-21 1984-03-27 Tsukasa Tada PROCESS FOR FORMING RESIST PATTERNS BY DEVELOPING A POLYMER CONTAINING TRIFLUOROETHYL-.alpha.- CHLOROCRYLATE UNITS WITH SPECIFIC KETONE COMPOUNDS
JPS57176040A (en) * 1981-04-22 1982-10-29 Toshiba Corp Preparation of photomask
JPS5821739A (ja) * 1981-07-31 1983-02-08 Toshiba Corp フオトマスクの製造方法
DE3279090D1 (en) * 1981-12-19 1988-11-10 Daikin Ind Ltd Resist material and process for forming fine resist pattern
JPS58139430A (ja) * 1982-02-15 1983-08-18 Toray Ind Inc レジストの剥離法
JPS608842A (ja) * 1983-06-29 1985-01-17 Toshiba Corp パタ−ン形成法
JPS6067941A (ja) * 1983-09-26 1985-04-18 Toshiba Corp 微細パタ−ン形成法
JPS6070443A (ja) * 1983-09-28 1985-04-22 Toshiba Corp 微細パタ−ンの形成方法
JPS60260037A (ja) * 1984-06-06 1985-12-23 Nec Corp X線レジスト材料
JPS60260040A (ja) * 1984-06-06 1985-12-23 Nec Corp X線レジスト材料
JPS60260036A (ja) * 1984-06-06 1985-12-23 Nec Corp X線レジスト材料
JPS61170736A (ja) * 1985-01-25 1986-08-01 Toray Ind Inc 感放射線レジスト組成物
JPS61170735A (ja) * 1985-01-25 1986-08-01 Toray Ind Inc ポリ(フルオロアルキルα−クロロアクリラ−ト)ないしそのコポリマの製造法

Also Published As

Publication number Publication date
DE3785957T2 (de) 1993-09-02
EP0239385A2 (de) 1987-09-30
JPS62223750A (ja) 1987-10-01
HK1002523A1 (en) 1998-08-28
EP0239385A3 (en) 1989-05-24
US4800151A (en) 1989-01-24
EP0239385B1 (de) 1993-05-26

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee