HK1002523A1 - Radiation-sensitive positive resist and composition containing the same - Google Patents

Radiation-sensitive positive resist and composition containing the same

Info

Publication number
HK1002523A1
HK1002523A1 HK98101476A HK98101476A HK1002523A1 HK 1002523 A1 HK1002523 A1 HK 1002523A1 HK 98101476 A HK98101476 A HK 98101476A HK 98101476 A HK98101476 A HK 98101476A HK 1002523 A1 HK1002523 A1 HK 1002523A1
Authority
HK
Hong Kong
Prior art keywords
radiation
same
composition containing
positive resist
sensitive positive
Prior art date
Application number
HK98101476A
Other languages
English (en)
Inventor
Mutsuo Kataoka
Aguto Tokunaga
Original Assignee
Toray Industries
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toray Industries filed Critical Toray Industries
Publication of HK1002523A1 publication Critical patent/HK1002523A1/xx

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/039Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/143Electron beam
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/167X-ray

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
HK98101476A 1986-03-26 1998-02-26 Radiation-sensitive positive resist and composition containing the same HK1002523A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61065898A JPS62223750A (ja) 1986-03-26 1986-03-26 放射線感応ポジ型レジストおよび該レジスト組成物

Publications (1)

Publication Number Publication Date
HK1002523A1 true HK1002523A1 (en) 1998-08-28

Family

ID=13300241

Family Applications (1)

Application Number Title Priority Date Filing Date
HK98101476A HK1002523A1 (en) 1986-03-26 1998-02-26 Radiation-sensitive positive resist and composition containing the same

Country Status (5)

Country Link
US (1) US4800151A (xx)
EP (1) EP0239385B1 (xx)
JP (1) JPS62223750A (xx)
DE (1) DE3785957T2 (xx)
HK (1) HK1002523A1 (xx)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH087444B2 (ja) * 1989-01-26 1996-01-29 東レ株式会社 感放射線ポジ型レジスト
CN1253759C (zh) * 1998-09-23 2006-04-26 纳幕尔杜邦公司 微石印用光致抗蚀剂、聚合物和工艺
US6849377B2 (en) 1998-09-23 2005-02-01 E. I. Du Pont De Nemours And Company Photoresists, polymers and processes for microlithography
WO2001055789A2 (en) * 2000-01-25 2001-08-02 Infineon Technologies Ag Chemically amplified short wavelength resist
JP7172495B2 (ja) * 2018-11-22 2022-11-16 日本ゼオン株式会社 重合体及びポジ型レジスト組成物

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3425867A (en) * 1963-09-23 1969-02-04 Minnesota Mining & Mfg Electron beam recording medium with acid sensitive indicator and halogenated polymer coating
JPS5518638A (en) * 1978-07-27 1980-02-08 Chiyou Lsi Gijutsu Kenkyu Kumiai Ionized radiation sensitive positive type resist
EP0016679B1 (fr) * 1979-03-09 1982-06-09 Thomson-Csf Substances de photomasquage, leur procédé de préparation, et masque obtenu
JPS602234B2 (ja) * 1980-05-30 1985-01-19 本田技研工業株式会社 自動二輪車のパワ−ユニツト懸架装置におけるアンダ−ガ−ド装置
CA1164261A (en) * 1981-04-21 1984-03-27 Tsukasa Tada PROCESS FOR FORMING RESIST PATTERNS BY DEVELOPING A POLYMER CONTAINING TRIFLUOROETHYL-.alpha.- CHLOROCRYLATE UNITS WITH SPECIFIC KETONE COMPOUNDS
JPS57176040A (en) * 1981-04-22 1982-10-29 Toshiba Corp Preparation of photomask
JPS5821739A (ja) * 1981-07-31 1983-02-08 Toshiba Corp フオトマスクの製造方法
CA1207099A (en) * 1981-12-19 1986-07-02 Tsuneo Fujii Resist material and process for forming fine resist pattern
JPS58139430A (ja) * 1982-02-15 1983-08-18 Toray Ind Inc レジストの剥離法
JPS608842A (ja) * 1983-06-29 1985-01-17 Toshiba Corp パタ−ン形成法
JPS6067941A (ja) * 1983-09-26 1985-04-18 Toshiba Corp 微細パタ−ン形成法
JPS6070443A (ja) * 1983-09-28 1985-04-22 Toshiba Corp 微細パタ−ンの形成方法
JPS60260036A (ja) * 1984-06-06 1985-12-23 Nec Corp X線レジスト材料
JPS60260037A (ja) * 1984-06-06 1985-12-23 Nec Corp X線レジスト材料
JPS60260040A (ja) * 1984-06-06 1985-12-23 Nec Corp X線レジスト材料
JPS61170736A (ja) * 1985-01-25 1986-08-01 Toray Ind Inc 感放射線レジスト組成物
JPS61170735A (ja) * 1985-01-25 1986-08-01 Toray Ind Inc ポリ(フルオロアルキルα−クロロアクリラ−ト)ないしそのコポリマの製造法

Also Published As

Publication number Publication date
DE3785957T2 (de) 1993-09-02
EP0239385A3 (en) 1989-05-24
DE3785957D1 (de) 1993-07-01
EP0239385B1 (en) 1993-05-26
JPS62223750A (ja) 1987-10-01
EP0239385A2 (en) 1987-09-30
US4800151A (en) 1989-01-24

Similar Documents

Publication Publication Date Title
EP0249139A3 (en) Resist compositions and use
EP0239423A3 (en) Positive type radiation-sensitive resin composition
HK38094A (en) Granular composition and dentifrice containing the same
EP0211667A3 (en) Radiation-sensitive resin composition
PH24830A (en) Indolize compounds and compositions containing them
NZ220879A (en) Sunscreen compounds and compositions
EP0227487A3 (en) Positive type radiation-sensitive resin composition
EP0230995A3 (en) Light-sensitive composition
EP0239082A3 (en) Light-sensitive composition
EP0262788A3 (en) Light-sensitive composition
EP0415266A3 (en) Radiation-sensitive positive resist composition
GB2195121B (en) Light-sensitive composition
DE3471642D1 (en) Compounds containing the (co(mos4)2)3-trianion and their preparation
GB8714038D0 (en) Photosensitive composition
EP0246467A3 (en) Photosensitive resin composition and use thereof
GB8710397D0 (en) Photoresist composition
PH21540A (en) Cholecalciferol derivatives and pharmaceutical compositions containing the same
IL72515A0 (en) Coumarin deerivatives and pharmaceutical compositions containing the same
GB8701014D0 (en) Light-sensitive composition
EP0461654A3 (en) Radiation-sensitive positive resist composition
EP0190654A3 (en) Fluorine-containing copolymer and composition containing the same
EP0435181A3 (en) Radiation-sensitive positive resist composition
EP0180190A3 (en) 3,4-dihydrobenzopyran compounds and pharmaceutical composition containing the same
EP0443607A3 (en) Radiation-sensitive positive resist composition
EP0365318A3 (en) Radiation-sensitive resin composition

Legal Events

Date Code Title Description
PC Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee)