HK1002523A1 - Radiation-sensitive positive resist and composition containing the same - Google Patents
Radiation-sensitive positive resist and composition containing the sameInfo
- Publication number
- HK1002523A1 HK1002523A1 HK98101476A HK98101476A HK1002523A1 HK 1002523 A1 HK1002523 A1 HK 1002523A1 HK 98101476 A HK98101476 A HK 98101476A HK 98101476 A HK98101476 A HK 98101476A HK 1002523 A1 HK1002523 A1 HK 1002523A1
- Authority
- HK
- Hong Kong
- Prior art keywords
- radiation
- same
- composition containing
- positive resist
- sensitive positive
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/143—Electron beam
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/167—X-ray
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP61065898A JPS62223750A (ja) | 1986-03-26 | 1986-03-26 | 放射線感応ポジ型レジストおよび該レジスト組成物 |
Publications (1)
Publication Number | Publication Date |
---|---|
HK1002523A1 true HK1002523A1 (en) | 1998-08-28 |
Family
ID=13300241
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
HK98101476A HK1002523A1 (en) | 1986-03-26 | 1998-02-26 | Radiation-sensitive positive resist and composition containing the same |
Country Status (5)
Country | Link |
---|---|
US (1) | US4800151A (xx) |
EP (1) | EP0239385B1 (xx) |
JP (1) | JPS62223750A (xx) |
DE (1) | DE3785957T2 (xx) |
HK (1) | HK1002523A1 (xx) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH087444B2 (ja) * | 1989-01-26 | 1996-01-29 | 東レ株式会社 | 感放射線ポジ型レジスト |
CN1253759C (zh) * | 1998-09-23 | 2006-04-26 | 纳幕尔杜邦公司 | 微石印用光致抗蚀剂、聚合物和工艺 |
US6849377B2 (en) | 1998-09-23 | 2005-02-01 | E. I. Du Pont De Nemours And Company | Photoresists, polymers and processes for microlithography |
WO2001055789A2 (en) * | 2000-01-25 | 2001-08-02 | Infineon Technologies Ag | Chemically amplified short wavelength resist |
JP7172495B2 (ja) * | 2018-11-22 | 2022-11-16 | 日本ゼオン株式会社 | 重合体及びポジ型レジスト組成物 |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3425867A (en) * | 1963-09-23 | 1969-02-04 | Minnesota Mining & Mfg | Electron beam recording medium with acid sensitive indicator and halogenated polymer coating |
JPS5518638A (en) * | 1978-07-27 | 1980-02-08 | Chiyou Lsi Gijutsu Kenkyu Kumiai | Ionized radiation sensitive positive type resist |
EP0016679B1 (fr) * | 1979-03-09 | 1982-06-09 | Thomson-Csf | Substances de photomasquage, leur procédé de préparation, et masque obtenu |
JPS602234B2 (ja) * | 1980-05-30 | 1985-01-19 | 本田技研工業株式会社 | 自動二輪車のパワ−ユニツト懸架装置におけるアンダ−ガ−ド装置 |
CA1164261A (en) * | 1981-04-21 | 1984-03-27 | Tsukasa Tada | PROCESS FOR FORMING RESIST PATTERNS BY DEVELOPING A POLYMER CONTAINING TRIFLUOROETHYL-.alpha.- CHLOROCRYLATE UNITS WITH SPECIFIC KETONE COMPOUNDS |
JPS57176040A (en) * | 1981-04-22 | 1982-10-29 | Toshiba Corp | Preparation of photomask |
JPS5821739A (ja) * | 1981-07-31 | 1983-02-08 | Toshiba Corp | フオトマスクの製造方法 |
CA1207099A (en) * | 1981-12-19 | 1986-07-02 | Tsuneo Fujii | Resist material and process for forming fine resist pattern |
JPS58139430A (ja) * | 1982-02-15 | 1983-08-18 | Toray Ind Inc | レジストの剥離法 |
JPS608842A (ja) * | 1983-06-29 | 1985-01-17 | Toshiba Corp | パタ−ン形成法 |
JPS6067941A (ja) * | 1983-09-26 | 1985-04-18 | Toshiba Corp | 微細パタ−ン形成法 |
JPS6070443A (ja) * | 1983-09-28 | 1985-04-22 | Toshiba Corp | 微細パタ−ンの形成方法 |
JPS60260036A (ja) * | 1984-06-06 | 1985-12-23 | Nec Corp | X線レジスト材料 |
JPS60260037A (ja) * | 1984-06-06 | 1985-12-23 | Nec Corp | X線レジスト材料 |
JPS60260040A (ja) * | 1984-06-06 | 1985-12-23 | Nec Corp | X線レジスト材料 |
JPS61170736A (ja) * | 1985-01-25 | 1986-08-01 | Toray Ind Inc | 感放射線レジスト組成物 |
JPS61170735A (ja) * | 1985-01-25 | 1986-08-01 | Toray Ind Inc | ポリ(フルオロアルキルα−クロロアクリラ−ト)ないしそのコポリマの製造法 |
-
1986
- 1986-03-26 JP JP61065898A patent/JPS62223750A/ja active Pending
-
1987
- 1987-03-20 US US07/028,428 patent/US4800151A/en not_active Expired - Lifetime
- 1987-03-25 DE DE8787302576T patent/DE3785957T2/de not_active Expired - Fee Related
- 1987-03-25 EP EP87302576A patent/EP0239385B1/en not_active Expired - Lifetime
-
1998
- 1998-02-26 HK HK98101476A patent/HK1002523A1/xx not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
DE3785957T2 (de) | 1993-09-02 |
EP0239385A3 (en) | 1989-05-24 |
DE3785957D1 (de) | 1993-07-01 |
EP0239385B1 (en) | 1993-05-26 |
JPS62223750A (ja) | 1987-10-01 |
EP0239385A2 (en) | 1987-09-30 |
US4800151A (en) | 1989-01-24 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PC | Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee) |