DE3785638D1 - Verfahren zur zuechtung von kristallen aus halbleiterverbindungen. - Google Patents

Verfahren zur zuechtung von kristallen aus halbleiterverbindungen.

Info

Publication number
DE3785638D1
DE3785638D1 DE8787309668T DE3785638T DE3785638D1 DE 3785638 D1 DE3785638 D1 DE 3785638D1 DE 8787309668 T DE8787309668 T DE 8787309668T DE 3785638 T DE3785638 T DE 3785638T DE 3785638 D1 DE3785638 D1 DE 3785638D1
Authority
DE
Germany
Prior art keywords
growing crystals
semiconductor connections
connections
semiconductor
crystals
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8787309668T
Other languages
English (en)
Other versions
DE3785638T2 (de
Inventor
Seikoh Yoshida
Toshio Kikuta
Yuzo Kashiwayanagi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Furukawa Electric Co Ltd
Original Assignee
Furukawa Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP25830986A external-priority patent/JPH0729870B2/ja
Priority claimed from JP18896487A external-priority patent/JPH0768075B2/ja
Application filed by Furukawa Electric Co Ltd filed Critical Furukawa Electric Co Ltd
Application granted granted Critical
Publication of DE3785638D1 publication Critical patent/DE3785638D1/de
Publication of DE3785638T2 publication Critical patent/DE3785638T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/003—Heating or cooling of the melt or the crystallised material
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/901—Levitation, reduced gravity, microgravity, space
    • Y10S117/902—Specified orientation, shape, crystallography, or size of seed or substrate

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE87309668T 1986-10-31 1987-11-02 Verfahren zur Züchtung von Kristallen aus Halbleiterverbindungen. Expired - Fee Related DE3785638T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP25830986A JPH0729870B2 (ja) 1986-10-31 1986-10-31 化合物半導体の結晶成長方法および装置
JP18896487A JPH0768075B2 (ja) 1987-07-30 1987-07-30 化合物半導体単結晶成長方法

Publications (2)

Publication Number Publication Date
DE3785638D1 true DE3785638D1 (de) 1993-06-03
DE3785638T2 DE3785638T2 (de) 1993-11-18

Family

ID=26505238

Family Applications (1)

Application Number Title Priority Date Filing Date
DE87309668T Expired - Fee Related DE3785638T2 (de) 1986-10-31 1987-11-02 Verfahren zur Züchtung von Kristallen aus Halbleiterverbindungen.

Country Status (3)

Country Link
US (1) US4853066A (de)
EP (1) EP0266227B1 (de)
DE (1) DE3785638T2 (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5342475A (en) * 1991-06-07 1994-08-30 The Furukawa Electric Co., Ltd. Method of growing single crystal of compound semiconductor
US5611856A (en) * 1994-05-19 1997-03-18 Lockheed Sanders, Inc. Method for growing crystals
WO1995033873A1 (fr) * 1994-06-02 1995-12-14 Kabushiki Kaisha Kobe Seiko Sho Procede et dispositif de production d'un monocristal macle
JP3648703B2 (ja) * 2000-01-07 2005-05-18 株式会社日鉱マテリアルズ 化合物半導体単結晶の製造方法
JP2002249399A (ja) * 2001-02-21 2002-09-06 Murata Mfg Co Ltd 単結晶の製造方法および単結晶
US20150023866A1 (en) * 2013-07-22 2015-01-22 Rubicon Technology, Inc. Method and system of producing large oxide crystals from a melt

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1217926B (de) * 1963-08-17 1966-06-02 Siemens Ag Verfahren zum Vermeiden von Streifen in Metall- oder Halbleiterkristallen
FR2320773A1 (fr) * 1973-12-14 1977-03-11 Radiotechnique Compelec Procede de fabrication de lingots monocristallins
FR2255949B1 (de) * 1973-12-28 1976-10-08 Radiotechnique Compelec
US4096025A (en) * 1974-02-21 1978-06-20 The United States Of America As Represented By The Secretary Of The Army Method of orienting seed crystals in a melt, and product obtained thereby
US4050905A (en) * 1975-05-27 1977-09-27 The Harshaw Chemical Company Growth of doped crystals
US4412577A (en) * 1982-01-27 1983-11-01 United Technologies Corporation Control of seed melt-back during directional solidification of metals

Also Published As

Publication number Publication date
EP0266227A3 (en) 1990-02-07
EP0266227B1 (de) 1993-04-28
EP0266227A2 (de) 1988-05-04
US4853066A (en) 1989-08-01
DE3785638T2 (de) 1993-11-18

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee