DE3780671T2 - Verfahren zum markieren/sortieren von halbleiterwafern in abhaengigkeit des vorausgesagten verhaltens der sauerstofffaellung. - Google Patents
Verfahren zum markieren/sortieren von halbleiterwafern in abhaengigkeit des vorausgesagten verhaltens der sauerstofffaellung.Info
- Publication number
- DE3780671T2 DE3780671T2 DE8787101864T DE3780671T DE3780671T2 DE 3780671 T2 DE3780671 T2 DE 3780671T2 DE 8787101864 T DE8787101864 T DE 8787101864T DE 3780671 T DE3780671 T DE 3780671T DE 3780671 T2 DE3780671 T2 DE 3780671T2
- Authority
- DE
- Germany
- Prior art keywords
- wafer
- oxygen
- wafers
- equation
- value
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 235000012431 wafers Nutrition 0.000 title claims description 204
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 title claims description 129
- 239000001301 oxygen Substances 0.000 title claims description 128
- 229910052760 oxygen Inorganic materials 0.000 title claims description 128
- 238000000034 method Methods 0.000 title claims description 55
- 239000004065 semiconductor Substances 0.000 title claims description 25
- 238000001514 detection method Methods 0.000 title description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 43
- 229910052799 carbon Inorganic materials 0.000 claims description 43
- 238000001556 precipitation Methods 0.000 claims description 37
- 238000005259 measurement Methods 0.000 claims description 36
- 238000004519 manufacturing process Methods 0.000 claims description 23
- 230000006798 recombination Effects 0.000 claims description 10
- 238000005215 recombination Methods 0.000 claims description 10
- 238000000611 regression analysis Methods 0.000 claims description 9
- 230000001066 destructive effect Effects 0.000 claims description 7
- 238000007669 thermal treatment Methods 0.000 claims description 7
- 238000012545 processing Methods 0.000 description 42
- 239000013078 crystal Substances 0.000 description 25
- 238000012360 testing method Methods 0.000 description 22
- 239000003792 electrolyte Substances 0.000 description 19
- 230000008859 change Effects 0.000 description 17
- 238000005033 Fourier transform infrared spectroscopy Methods 0.000 description 14
- 210000004027 cell Anatomy 0.000 description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 13
- 229910052710 silicon Inorganic materials 0.000 description 13
- 239000010703 silicon Substances 0.000 description 13
- 238000004140 cleaning Methods 0.000 description 12
- 239000000047 product Substances 0.000 description 12
- 239000000243 solution Substances 0.000 description 12
- 239000000758 substrate Substances 0.000 description 10
- 230000006870 function Effects 0.000 description 9
- 230000006911 nucleation Effects 0.000 description 9
- 238000010899 nucleation Methods 0.000 description 9
- 239000002244 precipitate Substances 0.000 description 9
- 230000008569 process Effects 0.000 description 8
- 230000005855 radiation Effects 0.000 description 8
- 238000004458 analytical method Methods 0.000 description 7
- 239000013598 vector Substances 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 238000002474 experimental method Methods 0.000 description 6
- 239000012535 impurity Substances 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 230000001419 dependent effect Effects 0.000 description 5
- 239000008151 electrolyte solution Substances 0.000 description 5
- 229940021013 electrolyte solution Drugs 0.000 description 5
- 239000010410 layer Substances 0.000 description 5
- 238000012417 linear regression Methods 0.000 description 5
- 239000002245 particle Substances 0.000 description 5
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 4
- 125000004429 atom Chemical group 0.000 description 4
- 239000000969 carrier Substances 0.000 description 4
- 210000002421 cell wall Anatomy 0.000 description 4
- 230000002596 correlated effect Effects 0.000 description 4
- 230000002349 favourable effect Effects 0.000 description 4
- 230000035515 penetration Effects 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- 238000000137 annealing Methods 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 239000000356 contaminant Substances 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 230000006872 improvement Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000012314 multivariate regression analysis Methods 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 125000004430 oxygen atom Chemical group O* 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- 238000007619 statistical method Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 2
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- 239000000908 ammonium hydroxide Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000005670 electromagnetic radiation Effects 0.000 description 2
- 238000005247 gettering Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 239000011780 sodium chloride Substances 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- 239000002344 surface layer Substances 0.000 description 2
- -1 tetrafluoroborate Chemical compound 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- 229910020781 SixOy Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 230000001464 adherent effect Effects 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- BFNBIHQBYMNNAN-UHFFFAOYSA-N ammonium sulfate Chemical compound N.N.OS(O)(=O)=O BFNBIHQBYMNNAN-UHFFFAOYSA-N 0.000 description 1
- 229910052921 ammonium sulfate Inorganic materials 0.000 description 1
- 235000011130 ammonium sulphate Nutrition 0.000 description 1
- 150000001450 anions Chemical class 0.000 description 1
- 230000003466 anti-cipated effect Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 230000001680 brushing effect Effects 0.000 description 1
- 150000001721 carbon Chemical class 0.000 description 1
- 150000001768 cations Chemical class 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000012459 cleaning agent Substances 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000009658 destructive testing Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007717 exclusion Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000012886 linear function Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 230000005499 meniscus Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000009659 non-destructive testing Methods 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 150000002926 oxygen Chemical class 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 239000004848 polyfunctional curative Substances 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 1
- 239000004810 polytetrafluoroethylene Substances 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- QEMXHQIAXOOASZ-UHFFFAOYSA-N tetramethylammonium Chemical compound C[N+](C)(C)C QEMXHQIAXOOASZ-UHFFFAOYSA-N 0.000 description 1
- 238000005382 thermal cycling Methods 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 238000011282 treatment Methods 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 238000009966 trimming Methods 0.000 description 1
- 239000012498 ultrapure water Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/265—Contactless testing
- G01R31/2656—Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T436/00—Chemistry: analytical and immunological testing
- Y10T436/20—Oxygen containing
- Y10T436/207497—Molecular oxygen
Landscapes
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Electromagnetism (AREA)
- Toxicology (AREA)
- General Physics & Mathematics (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US06/849,996 US4809196A (en) | 1986-04-10 | 1986-04-10 | Method for designating/sorting semiconductor wafers according to predicted oxygen precipitation behavior |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE3780671D1 DE3780671D1 (de) | 1992-09-03 |
| DE3780671T2 true DE3780671T2 (de) | 1993-03-11 |
Family
ID=25307018
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE8787101864T Expired - Lifetime DE3780671T2 (de) | 1986-04-10 | 1987-02-11 | Verfahren zum markieren/sortieren von halbleiterwafern in abhaengigkeit des vorausgesagten verhaltens der sauerstofffaellung. |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US4809196A (enExample) |
| EP (1) | EP0240668B1 (enExample) |
| JP (1) | JPS62243338A (enExample) |
| DE (1) | DE3780671T2 (enExample) |
Families Citing this family (28)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02275636A (ja) * | 1989-04-17 | 1990-11-09 | Nec Corp | 半導体装置の製造方法 |
| US4907802A (en) * | 1989-05-16 | 1990-03-13 | Gatin Walter L | Ball throwing apparatus |
| US5096839A (en) * | 1989-09-20 | 1992-03-17 | Kabushiki Kaisha Toshiba | Silicon wafer with defined interstitial oxygen concentration |
| US5436164A (en) * | 1990-11-15 | 1995-07-25 | Hemlock Semi-Conductor Corporation | Analytical method for particulate silicon |
| US5286658A (en) * | 1991-03-05 | 1994-02-15 | Fujitsu Limited | Process for producing semiconductor device |
| JPH07123118B2 (ja) * | 1992-12-11 | 1995-12-25 | 日本電気株式会社 | 化学処理装置 |
| FR2705155A1 (fr) * | 1993-05-12 | 1994-11-18 | Philips Laboratoire Electroniq | Dispositif et méthode pour générer une fonction d'approximation. |
| US5479340A (en) * | 1993-09-20 | 1995-12-26 | Sematech, Inc. | Real time control of plasma etch utilizing multivariate statistical analysis |
| SE502694C2 (sv) * | 1994-04-22 | 1995-12-11 | Foersvarets Forskningsanstalt | Sätt att bestämma omfattningen av syreprecipitat i kisel |
| JPH08147357A (ja) * | 1994-11-22 | 1996-06-07 | Nec Yamagata Ltd | 製造装置の簡易モデリング方法 |
| US5611855A (en) * | 1995-01-31 | 1997-03-18 | Seh America, Inc. | Method for manufacturing a calibration wafer having a microdefect-free layer of a precisely predetermined depth |
| US5593494A (en) * | 1995-03-14 | 1997-01-14 | Memc Electronic Materials, Inc. | Precision controlled precipitation of oxygen in silicon |
| KR100240023B1 (ko) * | 1996-11-29 | 2000-01-15 | 윤종용 | 반도체 웨이퍼 열처리방법 및 이에 따라 형성된 반도체 웨이퍼 |
| JP3446572B2 (ja) * | 1997-11-11 | 2003-09-16 | 信越半導体株式会社 | シリコン単結晶中の酸素析出挙動を割り出す方法、およびシリコン単結晶ウエーハ製造工程の決定方法、並びにプログラムを記録した記録媒体 |
| JP3739201B2 (ja) * | 1998-03-06 | 2006-01-25 | 富士通株式会社 | 半導体チップの相関解析方法及び装置、半導体チップ歩留まり調整方法並びに記憶媒体 |
| JP4467096B2 (ja) * | 1998-09-14 | 2010-05-26 | Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 | シリコン単結晶製造方法および半導体形成用ウェハ |
| JP2001351848A (ja) * | 2000-06-07 | 2001-12-21 | Tokyo Electron Ltd | 基板処理システム及び基板処理方法 |
| CA2416165A1 (en) * | 2000-07-14 | 2002-01-24 | Midwest Research Institute | Radio frequency coupling apparatus and method for measuring minority carrier lifetimes in semiconductor materials |
| US6597185B1 (en) * | 2000-09-20 | 2003-07-22 | Neocera, Inc. | Apparatus for localized measurements of complex permittivity of a material |
| US6859765B2 (en) * | 2002-12-13 | 2005-02-22 | Lam Research Corporation | Method and apparatus for slope to threshold conversion for process state monitoring and endpoint detection |
| US7598494B2 (en) * | 2007-01-30 | 2009-10-06 | Airgas, Inc. | Automated FTIR gas analyzer |
| ATE514095T1 (de) * | 2007-09-11 | 2011-07-15 | Soitec Silicon On Insulator | Volumenlebensdauermessung |
| US9239299B2 (en) * | 2010-02-15 | 2016-01-19 | National University Corporation Tokyo University Of Agriculture And Technology | Photoinduced carrier lifetime measuring method, light incidence efficiency measuring method, photoinduced carrier lifetime measuring device, and light incidence efficiency measuring device |
| US9452495B1 (en) * | 2011-07-08 | 2016-09-27 | Sixpoint Materials, Inc. | Laser slicer of crystal ingots and a method of slicing gallium nitride ingots using a laser slicer |
| TW201342246A (zh) * | 2012-04-02 | 2013-10-16 | Nuvoton Technology Corp | 電子裝置 |
| US9577314B2 (en) * | 2012-09-12 | 2017-02-21 | International Business Machines Corporation | Hybrid on-chip and package antenna |
| US9425063B2 (en) * | 2014-06-19 | 2016-08-23 | Infineon Technologies Ag | Method of reducing an impurity concentration in a semiconductor body, method of manufacturing a semiconductor device and semiconductor device |
| JP7450212B2 (ja) * | 2020-02-28 | 2024-03-15 | 日立造船株式会社 | 情報処理装置、制御システム、制御変数決定方法、および制御変数決定プログラム |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4273421A (en) * | 1977-01-17 | 1981-06-16 | Motorola, Inc. | Semiconductor lifetime measurement method |
| JPS5491049A (en) * | 1977-12-12 | 1979-07-19 | Ibm | Method of nonndestructively measuring immersion oxygen content into silicon wafer having no junction |
| US4342616A (en) * | 1981-02-17 | 1982-08-03 | International Business Machines Corporation | Technique for predicting oxygen precipitation in semiconductor wafers |
| JPS5833701A (ja) * | 1981-08-21 | 1983-02-28 | Hitachi Ltd | 分散形階層システムのｎ：１バツクアツプ方式 |
| US4429047A (en) * | 1981-08-28 | 1984-01-31 | Rca Corporation | Method for determining oxygen content in semiconductor material |
| US4578641A (en) * | 1982-09-24 | 1986-03-25 | Exxon Research And Engineering Co. | System for measuring carrier lifetime of semiconductor wafers |
| EP0165364B1 (fr) * | 1984-06-20 | 1988-09-07 | International Business Machines Corporation | Procédé de standardisation et de stabilisation de tranches semiconductrices |
-
1986
- 1986-04-10 US US06/849,996 patent/US4809196A/en not_active Expired - Lifetime
-
1987
- 1987-02-11 EP EP87101864A patent/EP0240668B1/en not_active Expired - Lifetime
- 1987-02-11 DE DE8787101864T patent/DE3780671T2/de not_active Expired - Lifetime
- 1987-03-10 JP JP62053224A patent/JPS62243338A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| EP0240668A3 (en) | 1989-08-23 |
| JPH0587140B2 (enExample) | 1993-12-15 |
| EP0240668A2 (en) | 1987-10-14 |
| JPS62243338A (ja) | 1987-10-23 |
| DE3780671D1 (de) | 1992-09-03 |
| US4809196A (en) | 1989-02-28 |
| EP0240668B1 (en) | 1992-07-29 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8364 | No opposition during term of opposition | ||
| 8330 | Complete renunciation |