DE69203378T2 - Verfahren zum Messen der Dicke einer Grenzfläche zwischen Silizium und Siliziumoxid. - Google Patents
Verfahren zum Messen der Dicke einer Grenzfläche zwischen Silizium und Siliziumoxid.Info
- Publication number
- DE69203378T2 DE69203378T2 DE69203378T DE69203378T DE69203378T2 DE 69203378 T2 DE69203378 T2 DE 69203378T2 DE 69203378 T DE69203378 T DE 69203378T DE 69203378 T DE69203378 T DE 69203378T DE 69203378 T2 DE69203378 T2 DE 69203378T2
- Authority
- DE
- Germany
- Prior art keywords
- silicon
- measuring
- interface
- thickness
- silicon oxide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B7/00—Measuring arrangements characterised by the use of electric or magnetic techniques
- G01B7/02—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring length, width or thickness
- G01B7/06—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring length, width or thickness for measuring thickness
- G01B7/08—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring length, width or thickness for measuring thickness using capacitive means
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B15/00—Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons
- G01B15/02—Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons for measuring thickness
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B7/00—Measuring arrangements characterised by the use of electric or magnetic techniques
- G01B7/02—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring length, width or thickness
- G01B7/06—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring length, width or thickness for measuring thickness
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/302—Contactless testing
- G01R31/305—Contactless testing using electron beams
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- General Engineering & Computer Science (AREA)
- Electromagnetism (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US07/690,405 US5138256A (en) | 1991-04-23 | 1991-04-23 | Method and apparatus for determining the thickness of an interfacial polysilicon/silicon oxide film |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69203378D1 DE69203378D1 (de) | 1995-08-17 |
DE69203378T2 true DE69203378T2 (de) | 1996-03-07 |
Family
ID=24772313
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69203378T Expired - Fee Related DE69203378T2 (de) | 1991-04-23 | 1992-04-07 | Verfahren zum Messen der Dicke einer Grenzfläche zwischen Silizium und Siliziumoxid. |
Country Status (4)
Country | Link |
---|---|
US (1) | US5138256A (de) |
EP (1) | EP0511145B1 (de) |
JP (1) | JPH0744210B2 (de) |
DE (1) | DE69203378T2 (de) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5325054A (en) * | 1992-07-07 | 1994-06-28 | Texas Instruments Incorporated | Method and system for screening reliability of semiconductor circuits |
JPH07153808A (ja) * | 1993-09-24 | 1995-06-16 | Shin Etsu Handotai Co Ltd | 結合型基板の結合界面のボロン評価方法 |
US5519334A (en) * | 1994-09-29 | 1996-05-21 | Advanced Micro Devices, Inc. | System and method for measuring charge traps within a dielectric layer formed on a semiconductor wafer |
US5714875A (en) * | 1995-02-23 | 1998-02-03 | Atomic Energy Of Canada Limited | Electron beam stop analyzer |
TW341664B (en) * | 1995-05-12 | 1998-10-01 | Ibm | Photovoltaic oxide charge measurement probe technique |
US5963781A (en) * | 1997-09-30 | 1999-10-05 | Intel Corporation | Technique for determining semiconductor substrate thickness |
US6897440B1 (en) | 1998-11-30 | 2005-05-24 | Fab Solutions, Inc. | Contact hole standard test device |
JP3913555B2 (ja) | 2002-01-17 | 2007-05-09 | ファブソリューション株式会社 | 膜厚測定方法および膜厚測定装置 |
US6859748B1 (en) * | 2002-07-03 | 2005-02-22 | Advanced Micro Devices, Inc. | Test structure for measuring effect of trench isolation on oxide in a memory device |
CN117091489B (zh) * | 2023-10-16 | 2023-12-22 | 青禾晶元(天津)半导体材料有限公司 | 一种复合结构的顶膜厚度检测装置及检测方法 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2259131A1 (de) * | 1972-12-02 | 1974-06-20 | Licentia Gmbh | Verfahren zur bestimmung der traegerlebensdauer von halbleiterkristallen |
JPS5711003B2 (de) * | 1974-03-25 | 1982-03-02 | ||
DE2824308A1 (de) * | 1978-06-02 | 1979-12-13 | Siemens Ag | Verfahren zum einpraegen einer spannung mit einem elektronenstrahl |
DE3116611C2 (de) * | 1980-05-01 | 1985-05-15 | Hitachi, Ltd., Tokio/Tokyo | Vorrichtung zur Messung von Halbleitereigenschaften |
US4483726A (en) * | 1981-06-30 | 1984-11-20 | International Business Machines Corporation | Double self-aligned fabrication process for making a bipolar transistor structure having a small polysilicon-to-extrinsic base contact area |
US4431460A (en) * | 1982-03-08 | 1984-02-14 | International Business Machines Corporation | Method of producing shallow, narrow base bipolar transistor structures via dual implantations of selected polycrystalline layer |
US4467519A (en) * | 1982-04-01 | 1984-08-28 | International Business Machines Corporation | Process for fabricating polycrystalline silicon film resistors |
DE3235100A1 (de) * | 1982-09-22 | 1984-03-22 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zur messung elektrischer potentiale an vergrabener festkoerpersubstanz |
US4598249A (en) * | 1984-02-29 | 1986-07-01 | Rca Corporation | Method using surface photovoltage (SPV) measurements for revealing heavy metal contamination of semiconductor material |
US4695794A (en) * | 1985-05-31 | 1987-09-22 | Santa Barbara Research Center | Voltage calibration in E-beam probe using optical flooding |
US4709141A (en) * | 1986-01-09 | 1987-11-24 | Rockwell International Corporation | Non-destructive testing of cooled detector arrays |
JPS62221125A (ja) * | 1986-03-24 | 1987-09-29 | Hitachi Micro Comput Eng Ltd | 深さ測定装置 |
US4859939A (en) * | 1987-12-21 | 1989-08-22 | The United States Of America As Represented By The Secretary Of The Army | Non-destructive testing of SOS wafers using surface photovoltage measurements |
IT1216540B (it) * | 1988-03-29 | 1990-03-08 | Sgs Thomson Microelectronics | Metodo e apparecchiatura per la misura del tempo di vita su giunzioni p_n a semiconduttore tramite effetto fotovoltaiico. |
-
1991
- 1991-04-23 US US07/690,405 patent/US5138256A/en not_active Expired - Fee Related
-
1992
- 1992-03-09 JP JP4050115A patent/JPH0744210B2/ja not_active Expired - Lifetime
- 1992-04-07 DE DE69203378T patent/DE69203378T2/de not_active Expired - Fee Related
- 1992-04-07 EP EP92480056A patent/EP0511145B1/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0511145B1 (de) | 1995-07-12 |
EP0511145A2 (de) | 1992-10-28 |
US5138256A (en) | 1992-08-11 |
EP0511145A3 (de) | 1992-11-25 |
DE69203378D1 (de) | 1995-08-17 |
JPH0697252A (ja) | 1994-04-08 |
JPH0744210B2 (ja) | 1995-05-15 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |