DE3780671D1 - Verfahren zum markieren/sortieren von halbleiterwafern in abhaengigkeit des vorausgesagten verhaltens der sauerstofffaellung. - Google Patents

Verfahren zum markieren/sortieren von halbleiterwafern in abhaengigkeit des vorausgesagten verhaltens der sauerstofffaellung.

Info

Publication number
DE3780671D1
DE3780671D1 DE8787101864T DE3780671T DE3780671D1 DE 3780671 D1 DE3780671 D1 DE 3780671D1 DE 8787101864 T DE8787101864 T DE 8787101864T DE 3780671 T DE3780671 T DE 3780671T DE 3780671 D1 DE3780671 D1 DE 3780671D1
Authority
DE
Germany
Prior art keywords
marking
semiconductor wafers
oxygen detection
predicted behavior
sorting semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8787101864T
Other languages
English (en)
Other versions
DE3780671T2 (de
Inventor
Donald A Miller
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of DE3780671D1 publication Critical patent/DE3780671D1/de
Publication of DE3780671T2 publication Critical patent/DE3780671T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/265—Contactless testing
    • G01R31/2656—Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T436/00—Chemistry: analytical and immunological testing
    • Y10T436/20—Oxygen containing
    • Y10T436/207497—Molecular oxygen

Landscapes

  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Electromagnetism (AREA)
  • Toxicology (AREA)
  • General Physics & Mathematics (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
DE8787101864T 1986-04-10 1987-02-11 Verfahren zum markieren/sortieren von halbleiterwafern in abhaengigkeit des vorausgesagten verhaltens der sauerstofffaellung. Expired - Lifetime DE3780671T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/849,996 US4809196A (en) 1986-04-10 1986-04-10 Method for designating/sorting semiconductor wafers according to predicted oxygen precipitation behavior

Publications (2)

Publication Number Publication Date
DE3780671D1 true DE3780671D1 (de) 1992-09-03
DE3780671T2 DE3780671T2 (de) 1993-03-11

Family

ID=25307018

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8787101864T Expired - Lifetime DE3780671T2 (de) 1986-04-10 1987-02-11 Verfahren zum markieren/sortieren von halbleiterwafern in abhaengigkeit des vorausgesagten verhaltens der sauerstofffaellung.

Country Status (4)

Country Link
US (1) US4809196A (de)
EP (1) EP0240668B1 (de)
JP (1) JPS62243338A (de)
DE (1) DE3780671T2 (de)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02275636A (ja) * 1989-04-17 1990-11-09 Nec Corp 半導体装置の製造方法
US4907802A (en) * 1989-05-16 1990-03-13 Gatin Walter L Ball throwing apparatus
US5096839A (en) * 1989-09-20 1992-03-17 Kabushiki Kaisha Toshiba Silicon wafer with defined interstitial oxygen concentration
US5436164A (en) * 1990-11-15 1995-07-25 Hemlock Semi-Conductor Corporation Analytical method for particulate silicon
US5286658A (en) * 1991-03-05 1994-02-15 Fujitsu Limited Process for producing semiconductor device
JPH07123118B2 (ja) * 1992-12-11 1995-12-25 日本電気株式会社 化学処理装置
FR2705155A1 (fr) * 1993-05-12 1994-11-18 Philips Laboratoire Electroniq Dispositif et méthode pour générer une fonction d'approximation.
US5479340A (en) * 1993-09-20 1995-12-26 Sematech, Inc. Real time control of plasma etch utilizing multivariate statistical analysis
SE502694C2 (sv) * 1994-04-22 1995-12-11 Foersvarets Forskningsanstalt Sätt att bestämma omfattningen av syreprecipitat i kisel
JPH08147357A (ja) * 1994-11-22 1996-06-07 Nec Yamagata Ltd 製造装置の簡易モデリング方法
US5611855A (en) * 1995-01-31 1997-03-18 Seh America, Inc. Method for manufacturing a calibration wafer having a microdefect-free layer of a precisely predetermined depth
US5593494A (en) * 1995-03-14 1997-01-14 Memc Electronic Materials, Inc. Precision controlled precipitation of oxygen in silicon
KR100240023B1 (ko) * 1996-11-29 2000-01-15 윤종용 반도체 웨이퍼 열처리방법 및 이에 따라 형성된 반도체 웨이퍼
JP3446572B2 (ja) * 1997-11-11 2003-09-16 信越半導体株式会社 シリコン単結晶中の酸素析出挙動を割り出す方法、およびシリコン単結晶ウエーハ製造工程の決定方法、並びにプログラムを記録した記録媒体
JP3739201B2 (ja) * 1998-03-06 2006-01-25 富士通株式会社 半導体チップの相関解析方法及び装置、半導体チップ歩留まり調整方法並びに記憶媒体
JP4467096B2 (ja) * 1998-09-14 2010-05-26 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 シリコン単結晶製造方法および半導体形成用ウェハ
JP2001351848A (ja) * 2000-06-07 2001-12-21 Tokyo Electron Ltd 基板処理システム及び基板処理方法
AU2001276896A1 (en) * 2000-07-14 2002-01-30 Midwest Research Institute Radio frequency coupling apparatus and method for measuring minority carrier lifetimes in semiconductor materials
US6597185B1 (en) * 2000-09-20 2003-07-22 Neocera, Inc. Apparatus for localized measurements of complex permittivity of a material
US6859765B2 (en) * 2002-12-13 2005-02-22 Lam Research Corporation Method and apparatus for slope to threshold conversion for process state monitoring and endpoint detection
US7598494B2 (en) * 2007-01-30 2009-10-06 Airgas, Inc. Automated FTIR gas analyzer
EP2037288B1 (de) * 2007-09-11 2011-06-22 S.O.I. TEC Silicon on Insulator Technologies Volumenlebensdauermessung
WO2011099191A1 (ja) * 2010-02-15 2011-08-18 国立大学法人東京農工大学 光誘起キャリアライフタイム測定方法、光入射効率測定方法、光誘起キャリアライフタイム測定装置、および光入射効率測定装置
US9452495B1 (en) * 2011-07-08 2016-09-27 Sixpoint Materials, Inc. Laser slicer of crystal ingots and a method of slicing gallium nitride ingots using a laser slicer
TW201342246A (zh) * 2012-04-02 2013-10-16 Nuvoton Technology Corp 電子裝置
US9577314B2 (en) * 2012-09-12 2017-02-21 International Business Machines Corporation Hybrid on-chip and package antenna
US9425063B2 (en) * 2014-06-19 2016-08-23 Infineon Technologies Ag Method of reducing an impurity concentration in a semiconductor body, method of manufacturing a semiconductor device and semiconductor device

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4273421A (en) * 1977-01-17 1981-06-16 Motorola, Inc. Semiconductor lifetime measurement method
JPS5491049A (en) * 1977-12-12 1979-07-19 Ibm Method of nonndestructively measuring immersion oxygen content into silicon wafer having no junction
US4342616A (en) * 1981-02-17 1982-08-03 International Business Machines Corporation Technique for predicting oxygen precipitation in semiconductor wafers
JPS5833701A (ja) * 1981-08-21 1983-02-28 Hitachi Ltd 分散形階層システムのｎ：１バツクアツプ方式
US4429047A (en) * 1981-08-28 1984-01-31 Rca Corporation Method for determining oxygen content in semiconductor material
US4578641A (en) * 1982-09-24 1986-03-25 Exxon Research And Engineering Co. System for measuring carrier lifetime of semiconductor wafers
DE3473971D1 (en) * 1984-06-20 1988-10-13 Ibm Method of standardization and stabilization of semiconductor wafers

Also Published As

Publication number Publication date
EP0240668A2 (de) 1987-10-14
EP0240668A3 (en) 1989-08-23
EP0240668B1 (de) 1992-07-29
DE3780671T2 (de) 1993-03-11
JPH0587140B2 (de) 1993-12-15
US4809196A (en) 1989-02-28
JPS62243338A (ja) 1987-10-23

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Legal Events

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8364 No opposition during term of opposition
8330 Complete disclaimer