DE3787562D1 - Geraet zum nachweisen von fehlern im muster von masken. - Google Patents

Geraet zum nachweisen von fehlern im muster von masken.

Info

Publication number
DE3787562D1
DE3787562D1 DE87106479T DE3787562T DE3787562D1 DE 3787562 D1 DE3787562 D1 DE 3787562D1 DE 87106479 T DE87106479 T DE 87106479T DE 3787562 T DE3787562 T DE 3787562T DE 3787562 D1 DE3787562 D1 DE 3787562D1
Authority
DE
Germany
Prior art keywords
mask pattern
detecting faults
faults
detecting
mask
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE87106479T
Other languages
English (en)
Other versions
DE3787562T2 (de
Inventor
Satoru Fushimi
Yasuo Nakagawa
Asahiro Kuni
Hitoshi Kubota
Hiroya Koshishiba
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Application granted granted Critical
Publication of DE3787562D1 publication Critical patent/DE3787562D1/de
Publication of DE3787562T2 publication Critical patent/DE3787562T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B21/00—Microscopes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
    • G03F1/84—Inspecting
    • G03F1/86—Inspecting by charged particle beam [CPB]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/26—Electron or ion microscopes
    • H01J2237/28—Scanning microscopes
    • H01J2237/2802—Transmission microscopes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • H01J2237/31793—Problems associated with lithography
    • H01J2237/31798—Problems associated with lithography detecting pattern defects
DE87106479T 1986-05-06 1987-05-05 Gerät zum Nachweisen von Fehlern im Muster von Masken. Expired - Fee Related DE3787562T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61102050A JPS62260335A (ja) 1986-05-06 1986-05-06 パタ−ン検査方法および装置

Publications (2)

Publication Number Publication Date
DE3787562D1 true DE3787562D1 (de) 1993-11-04
DE3787562T2 DE3787562T2 (de) 1994-04-28

Family

ID=14316936

Family Applications (1)

Application Number Title Priority Date Filing Date
DE87106479T Expired - Fee Related DE3787562T2 (de) 1986-05-06 1987-05-05 Gerät zum Nachweisen von Fehlern im Muster von Masken.

Country Status (5)

Country Link
US (1) US4814615A (de)
EP (1) EP0244816B1 (de)
JP (1) JPS62260335A (de)
KR (1) KR900008385B1 (de)
DE (1) DE3787562T2 (de)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AT392857B (de) * 1987-07-13 1991-06-25 Ims Ionen Mikrofab Syst Vorrichtung und verfahren zur inspektion einer maske
JP2602287B2 (ja) * 1988-07-01 1997-04-23 株式会社日立製作所 Ｘ線マスクの欠陥検査方法及びその装置
JPH0760661B2 (ja) * 1988-07-22 1995-06-28 株式会社日立製作所 電子顕微鏡
EP0361516B1 (de) * 1988-09-30 1996-05-01 Canon Kabushiki Kaisha Verfahren zur Herstellung einer Röntgenstrahlmasken-Struktur
JP3148353B2 (ja) * 1991-05-30 2001-03-19 ケーエルエー・インストルメンツ・コーポレーション 電子ビーム検査方法とそのシステム
JP3730263B2 (ja) * 1992-05-27 2005-12-21 ケーエルエー・インストルメンツ・コーポレーション 荷電粒子ビームを用いた自動基板検査の装置及び方法
JPH07335165A (ja) * 1994-06-10 1995-12-22 Hitachi Ltd 格子欠陥観察用電子顕微鏡
JP3490597B2 (ja) * 1997-01-07 2004-01-26 株式会社東芝 マスク検査装置
JPH11250850A (ja) * 1998-03-02 1999-09-17 Hitachi Ltd 走査電子顕微鏡及び顕微方法並びに対話型入力装置
US6633174B1 (en) * 1999-12-14 2003-10-14 Kla-Tencor Stepper type test structures and methods for inspection of semiconductor integrated circuits
AU2001238148A1 (en) * 2000-02-09 2001-08-20 Fei Company Through-the-lens collection of secondary particles for a focused ion beam system
US7655482B2 (en) * 2000-04-18 2010-02-02 Kla-Tencor Chemical mechanical polishing test structures and methods for inspecting the same
DE10039337A1 (de) 2000-08-04 2002-02-28 Infineon Technologies Ag Kombination von abtastenden und abbildenden Methoden bei der Überprüfung von Photomasken
US20030132382A1 (en) * 2001-12-18 2003-07-17 Sogard Michael R. System and method for inspecting a mask
US6765203B1 (en) * 2003-01-31 2004-07-20 Shimadzu Corporation Pallet assembly for substrate inspection device and substrate inspection device
US7297965B2 (en) 2004-07-14 2007-11-20 Applied Materials, Israel, Ltd. Method and apparatus for sample formation and microanalysis in a vacuum chamber
JP4528589B2 (ja) * 2004-09-27 2010-08-18 株式会社アドバンテスト マスク検査装置、マスク検査方法及び電子ビーム露光装置
JP4675697B2 (ja) * 2005-07-06 2011-04-27 株式会社東芝 マスクパターン検査方法、露光条件検証方法、および半導体装置の製造方法
JP2011033423A (ja) * 2009-07-31 2011-02-17 Hitachi High-Technologies Corp パターン形状選択方法、及びパターン測定装置
NL1037820C2 (en) * 2010-03-22 2011-09-23 Mapper Lithography Ip Bv Lithography system, sensor, sensor surface element and method of manufacture.
TWI545611B (zh) * 2010-11-13 2016-08-11 瑪波微影Ｉｐ公司 多射束曝光裝置以及用於決定其內的兩射束之間的距離之方法與感測器
JPWO2012081234A1 (ja) * 2010-12-14 2014-05-22 株式会社ニコン 露光方法及び露光装置、並びにデバイス製造方法
WO2012084363A1 (en) * 2010-12-20 2012-06-28 Asml Netherlands B.V. Method and system for monitoring the integrity of an article, and euv optical apparatus incorporating the same
CN106098520B (zh) * 2016-07-30 2017-10-13 北京工业大学 一种扫描/透射电子显微镜关联分析用真空移动装置
CN110595313A (zh) * 2019-08-20 2019-12-20 扬州辰亚光学科技有限公司 一种光学零部件研发用误差检测装置
EP4055444A1 (de) * 2019-11-04 2022-09-14 Synopsys, Inc. Verwendung von maskenherstellungsmodellen zur korrektur von lithografischen masken

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL7604553A (nl) * 1975-08-28 1977-03-02 Siemens Ag Met corpusculaire stralen werkende doorstraal- rastermicroscoop met energie-analysator.
JPS5248964A (en) * 1975-10-17 1977-04-19 Hitachi Ltd Transmission-type scanning electronic microscope
JPS5916705B2 (ja) * 1979-05-17 1984-04-17 日本電子株式会社 走査型透過電子顕微鏡
JPS5856332A (ja) * 1981-09-30 1983-04-04 Hitachi Ltd マスクの欠陥修正方法
DE3410885A1 (de) * 1984-03-24 1985-10-03 Ibm Deutschland Gmbh, 7000 Stuttgart Fehlerkorrigierte korpuskularstrahllithographie
JPH0658526B2 (ja) * 1986-01-08 1994-08-03 日本電信電話株式会社 マスク欠陥検査装置

Also Published As

Publication number Publication date
US4814615A (en) 1989-03-21
EP0244816A2 (de) 1987-11-11
KR900008385B1 (ko) 1990-11-17
EP0244816A3 (en) 1989-11-23
DE3787562T2 (de) 1994-04-28
EP0244816B1 (de) 1993-09-29
KR870011491A (ko) 1987-12-23
JPS62260335A (ja) 1987-11-12

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee