JPS62243338A - 酸素沈積の予測によつて半導体ウエハを分類する方法 - Google Patents

酸素沈積の予測によつて半導体ウエハを分類する方法

Info

Publication number
JPS62243338A
JPS62243338A JP62053224A JP5322487A JPS62243338A JP S62243338 A JPS62243338 A JP S62243338A JP 62053224 A JP62053224 A JP 62053224A JP 5322487 A JP5322487 A JP 5322487A JP S62243338 A JPS62243338 A JP S62243338A
Authority
JP
Japan
Prior art keywords
oxygen
wafer
value
wafers
initial
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP62053224A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0587140B2 (enExample
Inventor
ドナルド・アブラム・ミラー
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of JPS62243338A publication Critical patent/JPS62243338A/ja
Publication of JPH0587140B2 publication Critical patent/JPH0587140B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/265—Contactless testing
    • G01R31/2656—Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T436/00—Chemistry: analytical and immunological testing
    • Y10T436/20—Oxygen containing
    • Y10T436/207497—Molecular oxygen

Landscapes

  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Electromagnetism (AREA)
  • Toxicology (AREA)
  • General Physics & Mathematics (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
JP62053224A 1986-04-10 1987-03-10 酸素沈積の予測によつて半導体ウエハを分類する方法 Granted JPS62243338A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US849996 1986-04-10
US06/849,996 US4809196A (en) 1986-04-10 1986-04-10 Method for designating/sorting semiconductor wafers according to predicted oxygen precipitation behavior

Publications (2)

Publication Number Publication Date
JPS62243338A true JPS62243338A (ja) 1987-10-23
JPH0587140B2 JPH0587140B2 (enExample) 1993-12-15

Family

ID=25307018

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62053224A Granted JPS62243338A (ja) 1986-04-10 1987-03-10 酸素沈積の予測によつて半導体ウエハを分類する方法

Country Status (4)

Country Link
US (1) US4809196A (enExample)
EP (1) EP0240668B1 (enExample)
JP (1) JPS62243338A (enExample)
DE (1) DE3780671T2 (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02275636A (ja) * 1989-04-17 1990-11-09 Nec Corp 半導体装置の製造方法
JPH06181194A (ja) * 1992-12-11 1994-06-28 Nec Corp 化学処理装置
JP2010539678A (ja) * 2007-09-11 2010-12-16 エス． オー． アイ． テック シリコン オン インシュレーター テクノロジーズ 電荷キャリアの寿命を測定するための方法及び装置
JP2021135940A (ja) * 2020-02-28 2021-09-13 日立造船株式会社 情報処理装置、制御システム、制御変数決定方法、および制御変数決定プログラム

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4907802A (en) * 1989-05-16 1990-03-13 Gatin Walter L Ball throwing apparatus
US5096839A (en) * 1989-09-20 1992-03-17 Kabushiki Kaisha Toshiba Silicon wafer with defined interstitial oxygen concentration
US5436164A (en) * 1990-11-15 1995-07-25 Hemlock Semi-Conductor Corporation Analytical method for particulate silicon
KR960000952B1 (ko) * 1991-03-05 1996-01-15 후지쓰 가부시끼가이샤 반도체 장치의 생산공정
FR2705155A1 (fr) * 1993-05-12 1994-11-18 Philips Laboratoire Electroniq Dispositif et méthode pour générer une fonction d'approximation.
US5479340A (en) * 1993-09-20 1995-12-26 Sematech, Inc. Real time control of plasma etch utilizing multivariate statistical analysis
SE502694C2 (sv) * 1994-04-22 1995-12-11 Foersvarets Forskningsanstalt Sätt att bestämma omfattningen av syreprecipitat i kisel
JPH08147357A (ja) * 1994-11-22 1996-06-07 Nec Yamagata Ltd 製造装置の簡易モデリング方法
US5611855A (en) * 1995-01-31 1997-03-18 Seh America, Inc. Method for manufacturing a calibration wafer having a microdefect-free layer of a precisely predetermined depth
US5593494A (en) * 1995-03-14 1997-01-14 Memc Electronic Materials, Inc. Precision controlled precipitation of oxygen in silicon
KR100240023B1 (ko) * 1996-11-29 2000-01-15 윤종용 반도체 웨이퍼 열처리방법 및 이에 따라 형성된 반도체 웨이퍼
JP3446572B2 (ja) * 1997-11-11 2003-09-16 信越半導体株式会社 シリコン単結晶中の酸素析出挙動を割り出す方法、およびシリコン単結晶ウエーハ製造工程の決定方法、並びにプログラムを記録した記録媒体
JP3739201B2 (ja) * 1998-03-06 2006-01-25 富士通株式会社 半導体チップの相関解析方法及び装置、半導体チップ歩留まり調整方法並びに記憶媒体
JP4467096B2 (ja) * 1998-09-14 2010-05-26 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 シリコン単結晶製造方法および半導体形成用ウェハ
JP2001351848A (ja) * 2000-06-07 2001-12-21 Tokyo Electron Ltd 基板処理システム及び基板処理方法
CA2416165A1 (en) * 2000-07-14 2002-01-24 Midwest Research Institute Radio frequency coupling apparatus and method for measuring minority carrier lifetimes in semiconductor materials
US6597185B1 (en) * 2000-09-20 2003-07-22 Neocera, Inc. Apparatus for localized measurements of complex permittivity of a material
US6859765B2 (en) * 2002-12-13 2005-02-22 Lam Research Corporation Method and apparatus for slope to threshold conversion for process state monitoring and endpoint detection
US7598494B2 (en) * 2007-01-30 2009-10-06 Airgas, Inc. Automated FTIR gas analyzer
KR101704624B1 (ko) * 2010-02-15 2017-02-08 고꾸리쯔 다이가꾸호우징 도쿄노우코우다이가쿠 광 유기 캐리어 수명 측정 방법, 광 입사 효율 측정 방법, 광 유기 캐리어 수명 측정 장치, 및 광 입사 효율 측정 장치
US9452495B1 (en) * 2011-07-08 2016-09-27 Sixpoint Materials, Inc. Laser slicer of crystal ingots and a method of slicing gallium nitride ingots using a laser slicer
TW201342246A (zh) * 2012-04-02 2013-10-16 Nuvoton Technology Corp 電子裝置
US9577314B2 (en) * 2012-09-12 2017-02-21 International Business Machines Corporation Hybrid on-chip and package antenna
US9425063B2 (en) 2014-06-19 2016-08-23 Infineon Technologies Ag Method of reducing an impurity concentration in a semiconductor body, method of manufacturing a semiconductor device and semiconductor device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5833701A (ja) * 1981-08-21 1983-02-28 Hitachi Ltd 分散形階層システムのｎ：１バツクアツプ方式

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4273421A (en) * 1977-01-17 1981-06-16 Motorola, Inc. Semiconductor lifetime measurement method
JPS5491049A (en) * 1977-12-12 1979-07-19 Ibm Method of nonndestructively measuring immersion oxygen content into silicon wafer having no junction
US4342616A (en) * 1981-02-17 1982-08-03 International Business Machines Corporation Technique for predicting oxygen precipitation in semiconductor wafers
US4429047A (en) * 1981-08-28 1984-01-31 Rca Corporation Method for determining oxygen content in semiconductor material
US4578641A (en) * 1982-09-24 1986-03-25 Exxon Research And Engineering Co. System for measuring carrier lifetime of semiconductor wafers
EP0165364B1 (fr) * 1984-06-20 1988-09-07 International Business Machines Corporation Procédé de standardisation et de stabilisation de tranches semiconductrices

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5833701A (ja) * 1981-08-21 1983-02-28 Hitachi Ltd 分散形階層システムのｎ：１バツクアツプ方式

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02275636A (ja) * 1989-04-17 1990-11-09 Nec Corp 半導体装置の製造方法
JPH06181194A (ja) * 1992-12-11 1994-06-28 Nec Corp 化学処理装置
JP2010539678A (ja) * 2007-09-11 2010-12-16 エス． オー． アイ． テック シリコン オン インシュレーター テクノロジーズ 電荷キャリアの寿命を測定するための方法及び装置
JP2021135940A (ja) * 2020-02-28 2021-09-13 日立造船株式会社 情報処理装置、制御システム、制御変数決定方法、および制御変数決定プログラム

Also Published As

Publication number Publication date
EP0240668A2 (en) 1987-10-14
US4809196A (en) 1989-02-28
DE3780671D1 (de) 1992-09-03
EP0240668B1 (en) 1992-07-29
DE3780671T2 (de) 1993-03-11
JPH0587140B2 (enExample) 1993-12-15
EP0240668A3 (en) 1989-08-23

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