DE3779765T2 - Metal-halbleiter-metal photodiode. - Google Patents

Metal-halbleiter-metal photodiode.

Info

Publication number
DE3779765T2
DE3779765T2 DE8787400025T DE3779765T DE3779765T2 DE 3779765 T2 DE3779765 T2 DE 3779765T2 DE 8787400025 T DE8787400025 T DE 8787400025T DE 3779765 T DE3779765 T DE 3779765T DE 3779765 T2 DE3779765 T2 DE 3779765T2
Authority
DE
Germany
Prior art keywords
metal
photodiod
semiconductor
metal semiconductor
semiconductor metal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8787400025T
Other languages
English (en)
Other versions
DE3779765D1 (de
Inventor
Masanori Ito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Publication of DE3779765D1 publication Critical patent/DE3779765D1/de
Application granted granted Critical
Publication of DE3779765T2 publication Critical patent/DE3779765T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/1443—Devices controlled by radiation with at least one potential jump or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/07—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the Schottky type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
    • H01L31/108—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the Schottky type
    • H01L31/1085—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the Schottky type the devices being of the Metal-Semiconductor-Metal [MSM] Schottky barrier type
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
DE8787400025T 1986-01-08 1987-01-08 Metal-halbleiter-metal photodiode. Expired - Fee Related DE3779765T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61000776A JPH0624251B2 (ja) 1986-01-08 1986-01-08 光半導体装置

Publications (2)

Publication Number Publication Date
DE3779765D1 DE3779765D1 (de) 1992-07-23
DE3779765T2 true DE3779765T2 (de) 1993-01-28

Family

ID=11483102

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8787400025T Expired - Fee Related DE3779765T2 (de) 1986-01-08 1987-01-08 Metal-halbleiter-metal photodiode.

Country Status (5)

Country Link
US (1) US4763176A (de)
EP (1) EP0229040B1 (de)
JP (1) JPH0624251B2 (de)
KR (1) KR900000076B1 (de)
DE (1) DE3779765T2 (de)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH022179A (ja) * 1988-06-13 1990-01-08 Fujitsu Ltd メタル・セミコンダクタ・ｆｅｔ
JP2637476B2 (ja) * 1988-06-17 1997-08-06 浜松ホトニクス株式会社 半導体受光素子
JP2527791B2 (ja) * 1988-08-05 1996-08-28 三菱電機株式会社 Ｍｓｍ型半導体受光素子
US5115294A (en) * 1989-06-29 1992-05-19 At&T Bell Laboratories Optoelectronic integrated circuit
US5019530A (en) * 1990-04-20 1991-05-28 International Business Machines Corporation Method of making metal-insulator-metal junction structures with adjustable barrier heights
US6833556B2 (en) 2002-08-12 2004-12-21 Acorn Technologies, Inc. Insulated gate field effect transistor having passivated schottky barriers to the channel
US7084423B2 (en) 2002-08-12 2006-08-01 Acorn Technologies, Inc. Method for depinning the Fermi level of a semiconductor at an electrical junction and devices incorporating such junctions
WO2007033610A1 (en) * 2005-09-26 2007-03-29 Hongkong Applied Science And Technology Research Institute Co., Ltd. Photo-detectors and optical devices incorporating same
JP4247263B2 (ja) * 2006-09-29 2009-04-02 株式会社日立製作所 半導体放射線検出器および放射線検出装置
US7750426B2 (en) * 2007-05-30 2010-07-06 Intersil Americas, Inc. Junction barrier Schottky diode with dual silicides
KR101898027B1 (ko) 2011-11-23 2018-09-12 아콘 테크놀로지스 인코포레이티드 계면 원자 단일층의 삽입에 의한 ⅳ족 반도체에 대한 금속 접점의 개선
US9620611B1 (en) 2016-06-17 2017-04-11 Acorn Technology, Inc. MIS contact structure with metal oxide conductor
DE112017005855T5 (de) 2016-11-18 2019-08-01 Acorn Technologies, Inc. Nanodrahttransistor mit Source und Drain induziert durch elektrische Kontakte mit negativer Schottky-Barrierenhöhe
KR101946205B1 (ko) * 2018-07-16 2019-04-17 아주대학교산학협력단 태양광-블라인드 uv-c 광센서 및 이의 제조 방법

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1082358A (en) * 1965-05-20 1967-09-06 Standard Telephones Cables Ltd Double injecting semiconductor
US3700980A (en) * 1971-04-08 1972-10-24 Texas Instruments Inc Schottky barrier phototransistor
GB1535367A (en) * 1975-04-02 1978-12-13 Exxon Research Engineering Co Photovoltaic device
JPS5450288A (en) * 1977-09-28 1979-04-20 Hokusan Kk Solar battery
US4345107A (en) * 1979-06-18 1982-08-17 Ametek, Inc. Cadmium telluride photovoltaic cells
US4289920A (en) * 1980-06-23 1981-09-15 International Business Machines Corporation Multiple bandgap solar cell on transparent substrate
DE3276287D1 (en) * 1981-04-20 1987-06-11 Hughes Aircraft Co High speed photoconductive detector
JPS59175166A (ja) * 1983-03-23 1984-10-03 Agency Of Ind Science & Technol アモルファス光電変換素子
US4514579A (en) * 1984-01-30 1985-04-30 Energy Conversion Devices, Inc. Large area photovoltaic cell and method for producing same

Also Published As

Publication number Publication date
JPS62159478A (ja) 1987-07-15
EP0229040A3 (en) 1989-09-06
EP0229040B1 (de) 1992-06-17
KR870007574A (ko) 1987-08-20
KR900000076B1 (ko) 1990-01-19
JPH0624251B2 (ja) 1994-03-30
DE3779765D1 (de) 1992-07-23
EP0229040A2 (de) 1987-07-15
US4763176A (en) 1988-08-09

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee