DE3763277D1 - Schaltungsanordnung zum ansteuern eines mit sourceseitiger last verbundenen mosfet. - Google Patents

Schaltungsanordnung zum ansteuern eines mit sourceseitiger last verbundenen mosfet.

Info

Publication number
DE3763277D1
DE3763277D1 DE8787103182T DE3763277T DE3763277D1 DE 3763277 D1 DE3763277 D1 DE 3763277D1 DE 8787103182 T DE8787103182 T DE 8787103182T DE 3763277 T DE3763277 T DE 3763277T DE 3763277 D1 DE3763277 D1 DE 3763277D1
Authority
DE
Germany
Prior art keywords
driving
source
circuit arrangement
mosfet connected
sided load
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8787103182T
Other languages
German (de)
English (en)
Inventor
Jenoe Dr Ing Tihanyi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Priority to DE8787103182T priority Critical patent/DE3763277D1/de
Application granted granted Critical
Publication of DE3763277D1 publication Critical patent/DE3763277D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/04—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
    • H03F3/16—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only with field-effect devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
    • H01L27/0711—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with bipolar transistors and diodes, or capacitors, or resistors
    • H01L27/0716—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with bipolar transistors and diodes, or capacitors, or resistors in combination with vertical bipolar transistors and diodes, or capacitors, or resistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/06—Modifications for ensuring a fully conducting state
    • H03K17/063—Modifications for ensuring a fully conducting state in field-effect transistor switches
DE8787103182T 1986-03-11 1987-03-06 Schaltungsanordnung zum ansteuern eines mit sourceseitiger last verbundenen mosfet. Expired - Lifetime DE3763277D1 (de)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DE8787103182T DE3763277D1 (de) 1986-03-11 1987-03-06 Schaltungsanordnung zum ansteuern eines mit sourceseitiger last verbundenen mosfet.

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE3608023 1986-03-11
DE8787103182T DE3763277D1 (de) 1986-03-11 1987-03-06 Schaltungsanordnung zum ansteuern eines mit sourceseitiger last verbundenen mosfet.

Publications (1)

Publication Number Publication Date
DE3763277D1 true DE3763277D1 (de) 1990-07-19

Family

ID=6296037

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8787103182T Expired - Lifetime DE3763277D1 (de) 1986-03-11 1987-03-06 Schaltungsanordnung zum ansteuern eines mit sourceseitiger last verbundenen mosfet.

Country Status (5)

Country Link
US (1) US4737667A (ja)
EP (1) EP0236967B1 (ja)
JP (1) JPS62219712A (ja)
KR (1) KR930007794B1 (ja)
DE (1) DE3763277D1 (ja)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT1224644B (it) * 1987-12-22 1990-10-18 Sgs Thomson Microelectronics Circuito per il mantenimento in conduzione di un transistore mos in mancanza di tensione di alimentazione elettrica.
US4888505A (en) * 1988-05-02 1989-12-19 National Semiconductor Corporation Voltage multiplier compatible with a self-isolated C/DMOS process
US4803612A (en) * 1988-06-08 1989-02-07 National Semiconductor Corporation Clock ripple reduction in a linear low dropout C/DMOS regulator
DE3878242D1 (de) * 1988-10-27 1993-03-18 Siemens Ag Leistungsendstufe mit einer last.
USRE35745E (en) * 1988-10-28 1998-03-17 Sgs-Thomson Microelectronics S.R.L. Device for generating a reference voltage for a switching circuit including a capacitive bootstrap circuit
US5008568A (en) * 1989-01-24 1991-04-16 Integrated Device Technology, Inc. CMOS output driver
EP0572706B1 (de) * 1992-06-05 1996-12-11 Siemens Aktiengesellschaft Ansteuerschaltung für einen Leistungs-FET mit sourceseitiger Last
EP0582125B1 (de) * 1992-08-04 1998-01-28 Siemens Aktiengesellschaft Ansteuerschaltung für einen Leistungs-MOSFET mit sourceseitiger Last
DE4423733C2 (de) * 1994-07-06 1999-04-01 Siemens Ag Integriertes Leistungs-Halbleiterbauelement mit Schutzstruktur
DE4446327A1 (de) * 1994-12-23 1996-07-04 Siemens Ag Schaltungsanordnung zum Ansteuern eines Leistungs-MOSFET
US5672992A (en) * 1995-04-11 1997-09-30 International Rectifier Corporation Charge pump circuit for high side switch
DE19535541A1 (de) * 1995-09-25 1997-03-27 Siemens Ag Schaltungsanordnung zum Ansteuern eines Depletion-MOSFET
DE19535985B4 (de) * 1995-09-27 2005-02-17 Infineon Technologies Ag Schaltungsanordnung zum Ansteuern eines FET
EP0766394B1 (de) * 1995-09-27 2002-03-20 Infineon Technologies AG Schaltungsanordnung zum Ansteuern eines Leistungs-Enhancement-MOSFET
US5726594A (en) * 1995-10-02 1998-03-10 Siliconix Incorporated Switching device including power MOSFET with internal power supply circuit
DE19631751C1 (de) * 1996-08-06 1997-11-27 Siemens Ag Ansteuerschaltung für einen Leistungs-FET mit sourceseitiger Last
DE19737586C2 (de) * 1997-08-28 2002-03-21 Infineon Technologies Ag Smart-Power-Schalter
FR2786629B1 (fr) 1998-11-27 2001-02-09 St Microelectronics Sa Circuit de commande d'un interrupteur a composants semiconducteurs fonctionnant en alternatif
DE19950022A1 (de) * 1999-10-09 2001-04-12 Bosch Gmbh Robert Ansteuervorrichtung für einen Schalter zum elektronischen Schalten eines Verbrauchers
US6772250B2 (en) * 2001-03-15 2004-08-03 International Business Machines Corporation Boundary scannable one bit precompensated CMOS driver with compensating pulse width control
DE10208585B4 (de) * 2002-02-22 2004-03-25 Trumpf Laser Gmbh + Co. Kg Pumplichtquelle für laseraktive Medien und Verfahren zu ihrem Betreiben
KR20220109110A (ko) * 2021-01-28 2022-08-04 엘지이노텍 주식회사 배터리 스위치 구동회로

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3271640A (en) * 1962-10-11 1966-09-06 Fairchild Camera Instr Co Semiconductor tetrode
US3667115A (en) * 1965-06-30 1972-06-06 Ibm Fabrication of semiconductor devices with cup-shaped regions
DE2547220A1 (de) * 1975-10-22 1977-05-05 Licentia Gmbh Verfahren zum herstellen einer integrierten schaltungsanordnung
JPS57208295A (en) * 1981-06-19 1982-12-21 Ricoh Co Ltd Diazo base heat-sensitive recording material
JPS583264A (ja) * 1981-06-30 1983-01-10 Fujitsu Ltd 高耐圧半導体集積回路およびその製造方法
JPH0612828B2 (ja) * 1983-06-30 1994-02-16 株式会社東芝 半導体装置
JPS6052112A (ja) * 1983-08-31 1985-03-25 Toshiba Corp 論理回路
US4698526A (en) * 1985-10-17 1987-10-06 Inmos Corporation Source follower CMOS input buffer

Also Published As

Publication number Publication date
JPS62219712A (ja) 1987-09-28
EP0236967A1 (de) 1987-09-16
KR930007794B1 (ko) 1993-08-19
KR870009542A (ko) 1987-10-27
EP0236967B1 (de) 1990-06-13
JPH0481892B2 (ja) 1992-12-25
US4737667A (en) 1988-04-12

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Legal Events

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8364 No opposition during term of opposition