DE3752224T2 - Photoelektrischer Wandler - Google Patents

Photoelektrischer Wandler

Info

Publication number
DE3752224T2
DE3752224T2 DE3752224T DE3752224T DE3752224T2 DE 3752224 T2 DE3752224 T2 DE 3752224T2 DE 3752224 T DE3752224 T DE 3752224T DE 3752224 T DE3752224 T DE 3752224T DE 3752224 T2 DE3752224 T2 DE 3752224T2
Authority
DE
Germany
Prior art keywords
potential
region
transistor
control
main electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE3752224T
Other languages
German (de)
English (en)
Other versions
DE3752224D1 (de
Inventor
Yoshio Atsugi-Shi Kanagawa-Ken Nakamura
Shigetoshi Atsugi-Shi Kanagawa-Ken Sugawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP61291589A external-priority patent/JP2501207B2/ja
Priority claimed from JP61291590A external-priority patent/JPH0815320B2/ja
Priority claimed from JP62006253A external-priority patent/JP2501208B2/ja
Application filed by Canon Inc filed Critical Canon Inc
Application granted granted Critical
Publication of DE3752224D1 publication Critical patent/DE3752224D1/de
Publication of DE3752224T2 publication Critical patent/DE3752224T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/197—Bipolar transistor image sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/62—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels
    • H04N25/621—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels for the control of blooming
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/701—Line sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
DE3752224T 1986-12-09 1987-12-09 Photoelektrischer Wandler Expired - Fee Related DE3752224T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP61291589A JP2501207B2 (ja) 1986-12-09 1986-12-09 光電変換装置
JP61291590A JPH0815320B2 (ja) 1986-12-09 1986-12-09 光電変換装置
JP62006253A JP2501208B2 (ja) 1987-01-16 1987-01-16 光電変換装置

Publications (2)

Publication Number Publication Date
DE3752224D1 DE3752224D1 (de) 1998-11-12
DE3752224T2 true DE3752224T2 (de) 1999-04-22

Family

ID=27277081

Family Applications (2)

Application Number Title Priority Date Filing Date
DE3752224T Expired - Fee Related DE3752224T2 (de) 1986-12-09 1987-12-09 Photoelektrischer Wandler
DE3752235T Expired - Fee Related DE3752235T2 (de) 1986-12-09 1987-12-09 Photoelektrischer Wandler

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE3752235T Expired - Fee Related DE3752235T2 (de) 1986-12-09 1987-12-09 Photoelektrischer Wandler

Country Status (3)

Country Link
US (1) US4866293A (https=)
EP (2) EP0274236B1 (https=)
DE (2) DE3752224T2 (https=)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5262850A (en) * 1988-09-20 1993-11-16 Canon Kabushiki Kaisha Photoelectric converting device having reduced line sensor space
US5272345A (en) * 1989-09-22 1993-12-21 Ada Technologies, Inc. Calibration method and apparatus for measuring the concentration of components in a fluid
US5241169A (en) * 1989-11-21 1993-08-31 Canon Kabushiki Kaisha Photoelectric conversion device having an improved control electrode structure and apparatus equipped with same
JP2810526B2 (ja) * 1989-11-21 1998-10-15 キヤノン株式会社 光電変換装置及び該装置を搭載した装置
EP0433007B1 (en) * 1989-12-14 1997-03-12 Canon Kabushiki Kaisha Photoelectric converting device with improved resetting transistor and information processing apparatus utilizing the same
US5260560A (en) * 1990-03-02 1993-11-09 Canon Kabushiki Kaisha Photoelectric transfer device
US5283428A (en) * 1990-11-27 1994-02-01 Canon Kabushiki Kaisha Photoelectric converting device and information processing apparatus employing the same
US5401952A (en) * 1991-10-25 1995-03-28 Canon Kabushiki Kaisha Signal processor having avalanche photodiodes
US5406332A (en) * 1992-03-06 1995-04-11 Canon Kabushiki Kaisha Photoelectric converting device
JPH05335615A (ja) * 1992-05-27 1993-12-17 Canon Inc 光電変換装置
US5453611A (en) * 1993-01-01 1995-09-26 Canon Kabushiki Kaisha Solid-state image pickup device with a plurality of photoelectric conversion elements on a common semiconductor chip
US5838176A (en) * 1996-07-11 1998-11-17 Foveonics, Inc. Correlated double sampling circuit
TW421962B (en) * 1997-09-29 2001-02-11 Canon Kk Image sensing device using mos type image sensing elements
US6856351B1 (en) * 1999-09-16 2005-02-15 Xerox Corporation Device and method for reducing lag and blooming in amorphous silicon sensor arrays
JP3467013B2 (ja) 1999-12-06 2003-11-17 キヤノン株式会社 固体撮像装置
US6940551B2 (en) 2000-09-25 2005-09-06 Foveon, Inc. Active pixel sensor with noise cancellation
JP5907500B2 (ja) 2011-10-06 2016-04-26 国立研究開発法人産業技術総合研究所 光電変換装置、光電変換アレイおよび撮像装置

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4500924A (en) * 1979-11-16 1985-02-19 Matsushita Electric Industrial Co., Ltd. Solid state imaging apparatus
JPS5977776A (ja) * 1982-10-25 1984-05-04 Mitsubishi Electric Corp 固体撮像素子
JPS59108468A (ja) * 1982-12-14 1984-06-22 Olympus Optical Co Ltd 固体撮像装置
US4686554A (en) * 1983-07-02 1987-08-11 Canon Kabushiki Kaisha Photoelectric converter
JPS6147662A (ja) * 1984-08-15 1986-03-08 Olympus Optical Co Ltd 固体撮像装置
EP0186162B1 (en) * 1984-12-24 1989-05-31 Kabushiki Kaisha Toshiba Solid state image sensor
JPS61157184A (ja) * 1984-12-28 1986-07-16 Canon Inc 光電変換装置
GB8517081D0 (en) * 1985-07-05 1985-08-14 Gen Electric Co Plc Image sensors
JPH0654957B2 (ja) * 1985-11-13 1994-07-20 キヤノン株式会社 光電変換装置
CA1289242C (en) * 1985-11-13 1991-09-17 Shigetoshi Sugawa Device and method of photoelectrically converting light into electrical signal
JPH0644619B2 (ja) * 1986-07-17 1994-06-08 キヤノン株式会社 光電変換装置

Also Published As

Publication number Publication date
DE3752235D1 (de) 1998-12-24
EP0274236A2 (en) 1988-07-13
EP0274236A3 (en) 1988-07-20
EP0274236B1 (en) 1998-10-07
DE3752235T2 (de) 1999-04-29
DE3752224D1 (de) 1998-11-12
EP0667707B1 (en) 1998-11-18
US4866293A (en) 1989-09-12
EP0667707A3 (https=) 1995-09-06
EP0667707A2 (en) 1995-08-16

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee