DE3750659D1 - Beobachtungsvorrichtung, die geladene teilchenstrahlen verwendet und eine solhe vorrichtung verwendendes oberflächenbeobachtungsverfahren. - Google Patents

Beobachtungsvorrichtung, die geladene teilchenstrahlen verwendet und eine solhe vorrichtung verwendendes oberflächenbeobachtungsverfahren.

Info

Publication number
DE3750659D1
DE3750659D1 DE3750659T DE3750659T DE3750659D1 DE 3750659 D1 DE3750659 D1 DE 3750659D1 DE 3750659 T DE3750659 T DE 3750659T DE 3750659 T DE3750659 T DE 3750659T DE 3750659 D1 DE3750659 D1 DE 3750659D1
Authority
DE
Germany
Prior art keywords
charged particle
monitoring
particle rays
monitoring method
surface monitoring
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE3750659T
Other languages
English (en)
Other versions
DE3750659T2 (de
Inventor
Ken Ichi Saito
Kou Wada
Masahiro Yoshizawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP61283868A external-priority patent/JPH0616400B2/ja
Priority claimed from JP62263968A external-priority patent/JPH01107443A/ja
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Application granted granted Critical
Publication of DE3750659D1 publication Critical patent/DE3750659D1/de
Publication of DE3750659T2 publication Critical patent/DE3750659T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/26—Electron or ion microscopes
    • H01J2237/28—Scanning microscopes
    • H01J2237/2809—Scanning microscopes characterised by the imaging problems involved
    • H01J2237/281—Bottom of trenches or holes

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
DE3750659T 1986-11-28 1987-11-13 Beobachtungsvorrichtung, die geladene teilchenstrahlen verwendet und eine solhe vorrichtung verwendendes oberflächenbeobachtungsverfahren. Expired - Fee Related DE3750659T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP61283868A JPH0616400B2 (ja) 1986-11-28 1986-11-28 荷電ビ−ム観察装置
JP62263968A JPH01107443A (ja) 1987-10-21 1987-10-21 荷電ビーム観察装置およびその焦点合わせ方法
PCT/JP1987/000880 WO1988004104A1 (en) 1986-11-28 1987-11-13 Apparatus for observation using charged particle beams and method of surface observation using charged particle beams

Publications (2)

Publication Number Publication Date
DE3750659D1 true DE3750659D1 (de) 1994-11-17
DE3750659T2 DE3750659T2 (de) 1995-02-16

Family

ID=26546287

Family Applications (1)

Application Number Title Priority Date Filing Date
DE3750659T Expired - Fee Related DE3750659T2 (de) 1986-11-28 1987-11-13 Beobachtungsvorrichtung, die geladene teilchenstrahlen verwendet und eine solhe vorrichtung verwendendes oberflächenbeobachtungsverfahren.

Country Status (4)

Country Link
US (1) US4928010A (de)
EP (1) EP0290620B1 (de)
DE (1) DE3750659T2 (de)
WO (1) WO1988004104A1 (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5057689A (en) * 1989-09-20 1991-10-15 Matsushita Electric Industrial Co., Ltd. Scanning electron microscope and a method of displaying cross sectional profiles using the same
US5866904A (en) * 1990-10-12 1999-02-02 Hitachi, Ltd. Scanning electron microscope and method for dimension measuring by using the same
EP0949653B1 (de) * 1991-11-27 2010-02-17 Hitachi, Ltd. Elektronenstrahlgerät
US6051839A (en) 1996-06-07 2000-04-18 Arch Development Corporation Magnetic lens apparatus for use in high-resolution scanning electron microscopes and lithographic processes
US6891167B2 (en) * 2000-06-15 2005-05-10 Kla-Tencor Technologies Apparatus and method for applying feedback control to a magnetic lens
WO2001097245A2 (en) 2000-06-15 2001-12-20 Kla-Tencor, Inc. Sectored magnetic lens and method of use
US7236847B2 (en) * 2002-01-16 2007-06-26 Kla-Tencor Technologies Corp. Systems and methods for closed loop defect reduction
US8760563B2 (en) 2010-10-19 2014-06-24 Hand Held Products, Inc. Autofocusing optical imaging device
US8692927B2 (en) 2011-01-19 2014-04-08 Hand Held Products, Inc. Imaging terminal having focus control
JP7194572B2 (ja) * 2018-12-04 2022-12-22 株式会社ニューフレアテクノロジー マルチ電子ビーム検査装置

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS574379Y2 (de) * 1975-09-11 1982-01-27
JPS5252562A (en) * 1975-10-27 1977-04-27 Shimadzu Corp Electron beam scanning type sample image pick-up device
DE2731458C3 (de) * 1977-07-12 1980-03-20 Siemens Ag, 1000 Berlin Und 8000 Muenchen Magnetische Objektivlinseneinrichtung für unter Vakuum arbeitende Korpuskularstrahlgeräte, insbesondere Objektivlinseneinrichtung für Höchstspannungs-Elektronenmikroskope und Verwendung
JPS574379A (en) * 1980-06-10 1982-01-09 Hitachi Seiko Ltd Power source device for welding
GB8327737D0 (en) * 1983-10-17 1983-11-16 Texas Instruments Ltd Electron detector
JPS60130044A (ja) * 1983-12-16 1985-07-11 Jeol Ltd 走査電子顕微鏡
JPS60212953A (ja) * 1984-04-06 1985-10-25 Hitachi Ltd 電子線装置
JPS6297246A (ja) * 1985-10-23 1987-05-06 Mitsubishi Electric Corp 走査型電子顕微鏡
JPS62223957A (ja) * 1986-03-26 1987-10-01 Hitachi Ltd ハイブリツド荷電粒子光学系
JP3144875B2 (ja) * 1992-03-04 2001-03-12 松下冷機株式会社 空気調和機の通信装置

Also Published As

Publication number Publication date
WO1988004104A1 (en) 1988-06-02
DE3750659T2 (de) 1995-02-16
US4928010A (en) 1990-05-22
EP0290620A4 (de) 1989-12-28
EP0290620A1 (de) 1988-11-17
EP0290620B1 (de) 1994-10-12

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee