DE3738160A1 - Verfahren und vorrichtung zur verminderung der ausschussrate von integrierten schaltkreisen - Google Patents
Verfahren und vorrichtung zur verminderung der ausschussrate von integrierten schaltkreisenInfo
- Publication number
- DE3738160A1 DE3738160A1 DE19873738160 DE3738160A DE3738160A1 DE 3738160 A1 DE3738160 A1 DE 3738160A1 DE 19873738160 DE19873738160 DE 19873738160 DE 3738160 A DE3738160 A DE 3738160A DE 3738160 A1 DE3738160 A1 DE 3738160A1
- Authority
- DE
- Germany
- Prior art keywords
- valve
- vacuum
- ssv
- chamber
- flow
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims description 22
- 238000009423 ventilation Methods 0.000 claims description 38
- 238000012545 processing Methods 0.000 claims description 15
- 238000004519 manufacturing process Methods 0.000 claims description 13
- 239000002245 particle Substances 0.000 claims description 10
- 230000008569 process Effects 0.000 claims description 9
- 239000000428 dust Substances 0.000 claims description 5
- 230000000903 blocking effect Effects 0.000 claims description 3
- 239000012530 fluid Substances 0.000 claims 1
- 239000007789 gas Substances 0.000 description 18
- 239000004065 semiconductor Substances 0.000 description 9
- 238000011109 contamination Methods 0.000 description 8
- 239000003990 capacitor Substances 0.000 description 7
- 239000000047 product Substances 0.000 description 6
- 235000012431 wafers Nutrition 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 238000001465 metallisation Methods 0.000 description 5
- 230000007547 defect Effects 0.000 description 4
- 230000003111 delayed effect Effects 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 238000002161 passivation Methods 0.000 description 4
- 238000005086 pumping Methods 0.000 description 4
- 238000011068 loading method Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012544 monitoring process Methods 0.000 description 3
- 229920001296 polysiloxane Polymers 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000005273 aeration Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000001914 filtration Methods 0.000 description 2
- 238000001595 flow curve Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 238000004886 process control Methods 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- 230000000630 rising effect Effects 0.000 description 2
- 230000035939 shock Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical class [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 101000713575 Homo sapiens Tubulin beta-3 chain Proteins 0.000 description 1
- 102100036790 Tubulin beta-3 chain Human genes 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000009499 grossing Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 230000004941 influx Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 230000026676 system process Effects 0.000 description 1
- 230000001960 triggered effect Effects 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
- G05D16/00—Control of fluid pressure
- G05D16/20—Control of fluid pressure characterised by the use of electric means
- G05D16/2006—Control of fluid pressure characterised by the use of electric means with direct action of electric energy on controlling means
- G05D16/2013—Control of fluid pressure characterised by the use of electric means with direct action of electric energy on controlling means using throttling means as controlling means
- G05D16/2026—Control of fluid pressure characterised by the use of electric means with direct action of electric energy on controlling means using throttling means as controlling means with a plurality of throttling means
- G05D16/2046—Control of fluid pressure characterised by the use of electric means with direct action of electric energy on controlling means using throttling means as controlling means with a plurality of throttling means the plurality of throttling means being arranged for the control of a single pressure from a plurality of converging pressures
- G05D16/2053—Control of fluid pressure characterised by the use of electric means with direct action of electric energy on controlling means using throttling means as controlling means with a plurality of throttling means the plurality of throttling means being arranged for the control of a single pressure from a plurality of converging pressures the plurality of throttling means comprising only a first throttling means acting on a higher pressure and a second throttling means acting on a lower pressure, e.g. the atmosphere
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T137/00—Fluid handling
- Y10T137/0318—Processes
- Y10T137/0396—Involving pressure control
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T137/00—Fluid handling
- Y10T137/7722—Line condition change responsive valves
- Y10T137/7758—Pilot or servo controlled
- Y10T137/7761—Electrically actuated valve
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T137/00—Fluid handling
- Y10T137/8593—Systems
- Y10T137/86389—Programmer or timer
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T137/00—Fluid handling
- Y10T137/8593—Systems
- Y10T137/86389—Programmer or timer
- Y10T137/86445—Plural, sequential, valve actuations
Landscapes
- Physics & Mathematics (AREA)
- Fluid Mechanics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Automation & Control Theory (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Electrodes Of Semiconductors (AREA)
- Flow Control (AREA)
- Control Of Fluid Pressure (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US06/928,509 US4739787A (en) | 1986-11-10 | 1986-11-10 | Method and apparatus for improving the yield of integrated circuit devices |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE3738160A1 true DE3738160A1 (de) | 1988-05-11 |
| DE3738160C2 DE3738160C2 (enExample) | 1993-01-14 |
Family
ID=25456334
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19873738160 Granted DE3738160A1 (de) | 1986-11-10 | 1987-11-10 | Verfahren und vorrichtung zur verminderung der ausschussrate von integrierten schaltkreisen |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US4739787A (enExample) |
| JP (1) | JPS63219130A (enExample) |
| DE (1) | DE3738160A1 (enExample) |
| FR (1) | FR2606426B1 (enExample) |
Families Citing this family (29)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4836233A (en) * | 1988-06-06 | 1989-06-06 | Eclipse Ion Technology, Inc. | Method and apparatus for venting vacuum processing equipment |
| US5031674A (en) * | 1989-03-03 | 1991-07-16 | Eaton Corporation | Fluid flow control method and apparatus for minimizing particle contamination |
| US4987933A (en) * | 1989-03-03 | 1991-01-29 | Eaton Corporation | Fluid flow control method and apparatus for minimizing particle contamination |
| US5240046A (en) * | 1989-03-03 | 1993-08-31 | Eaton Corporation | Fluid flow control method and apparatus for minimizing particle contamination |
| US5308989A (en) * | 1992-12-22 | 1994-05-03 | Eaton Corporation | Fluid flow control method and apparatus for an ion implanter |
| US5527390A (en) * | 1993-03-19 | 1996-06-18 | Tokyo Electron Kabushiki | Treatment system including a plurality of treatment apparatus |
| JP3332053B2 (ja) * | 1993-10-27 | 2002-10-07 | 清原 まさ子 | チャンバーへのガス供給方法 |
| KR100189981B1 (ko) * | 1995-11-21 | 1999-06-01 | 윤종용 | 진공 시스템을 구비한 반도체 소자 제조장치 |
| US5820641A (en) * | 1996-02-09 | 1998-10-13 | Mks Instruments, Inc. | Fluid cooled trap |
| US6312525B1 (en) | 1997-07-11 | 2001-11-06 | Applied Materials, Inc. | Modular architecture for semiconductor wafer fabrication equipment |
| US6197119B1 (en) | 1999-02-18 | 2001-03-06 | Mks Instruments, Inc. | Method and apparatus for controlling polymerized teos build-up in vacuum pump lines |
| US6238514B1 (en) | 1999-02-18 | 2001-05-29 | Mks Instruments, Inc. | Apparatus and method for removing condensable aluminum vapor from aluminum etch effluent |
| US6440261B1 (en) | 1999-05-25 | 2002-08-27 | Applied Materials, Inc. | Dual buffer chamber cluster tool for semiconductor wafer processing |
| US6558509B2 (en) * | 1999-11-30 | 2003-05-06 | Applied Materials, Inc. | Dual wafer load lock |
| USD441348S1 (en) | 1999-11-30 | 2001-05-01 | Applied Materials, Inc. | Process chamber lid |
| USD437333S1 (en) | 1999-11-30 | 2001-02-06 | Applied Materials, Inc. | Process chamber tray |
| USD446506S1 (en) | 1999-11-30 | 2001-08-14 | Applied Materials, Inc. | Monolith processing system platform |
| USD436609S1 (en) | 1999-11-30 | 2001-01-23 | Applied Materials, Inc. | Transfer chamber |
| US20050189074A1 (en) * | 2002-11-08 | 2005-09-01 | Tokyo Electron Limited | Gas processing apparatus and method and computer storage medium storing program for controlling same |
| US6488745B2 (en) | 2001-03-23 | 2002-12-03 | Mks Instruments, Inc. | Trap apparatus and method for condensable by-products of deposition reactions |
| US6655408B2 (en) * | 2001-06-13 | 2003-12-02 | Applied Materials, Inc. | Tunable ramp rate circuit for a mass flow controller |
| US20030013212A1 (en) * | 2001-07-10 | 2003-01-16 | Mitchell Bradley Dale | System and method for removing deposited material from within a semiconductor fabrication device |
| TWI256083B (en) * | 2004-06-02 | 2006-06-01 | Lam Res Co Ltd | Seasoning method for etch chamber |
| US20070196011A1 (en) * | 2004-11-22 | 2007-08-23 | Cox Damon K | Integrated vacuum metrology for cluster tool |
| US20070134821A1 (en) * | 2004-11-22 | 2007-06-14 | Randhir Thakur | Cluster tool for advanced front-end processing |
| US8172923B2 (en) * | 2008-01-17 | 2012-05-08 | Entegris, Inc. | Apparatus and method for reducing particle contamination in a vacuum chamber |
| WO2018073192A1 (en) * | 2016-10-17 | 2018-04-26 | Asml Netherlands B.V. | A vent valve system |
| DE102018112853A1 (de) * | 2018-05-29 | 2019-12-05 | Meyer Burger (Germany) Gmbh | Belüftungsvorrichtung und Vakuumproduktionsanlage |
| EP4170169A1 (en) * | 2021-10-25 | 2023-04-26 | Fluigent | Apparatus for controlling positive and negative pressure or flow in a fluidic system |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3429336A (en) * | 1966-12-07 | 1969-02-25 | Ishikawajima Harima Heavy Ind | Apparatus automatically controlling the correlation between time and air pressure |
| DE2122760B2 (de) * | 1970-05-08 | 1973-07-12 | Western Electric Co. Inc., New York, N.Y. (V.StA.) | Verfahren zur herstellung einer duennen halbleitenden schicht durch vakuumaufdampfen |
| US4054151A (en) * | 1974-05-20 | 1977-10-18 | Buchler Instruments, Division Of Searle Diagnostics Inc. | Concentrating vortex shaker |
| US4394871A (en) * | 1980-12-31 | 1983-07-26 | The Boeing Company | Programmable pressure regulator for titanium superplastic forming apparatus |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3225163A1 (de) * | 1981-07-08 | 1983-02-10 | Edsyn, Inc., 91406 Van Nuys, Calif. | Elektronisches steuer- und regelsystem fuer eine druck-und vakuumquelle |
| JPS5966339A (ja) * | 1982-10-06 | 1984-04-14 | Hitachi Ltd | 真空装置 |
| JPS59232269A (ja) * | 1983-06-14 | 1984-12-27 | Matsushita Electric Ind Co Ltd | 真空装置 |
| JPS59133365A (ja) * | 1983-11-28 | 1984-07-31 | Hitachi Ltd | 真空装置 |
| JPS60117629A (ja) * | 1983-11-30 | 1985-06-25 | Hitachi Ltd | 真空処理装置 |
-
1986
- 1986-11-10 US US06/928,509 patent/US4739787A/en not_active Expired - Lifetime
-
1987
- 1987-11-09 FR FR8715482A patent/FR2606426B1/fr not_active Expired - Fee Related
- 1987-11-10 DE DE19873738160 patent/DE3738160A1/de active Granted
- 1987-11-10 JP JP62284089A patent/JPS63219130A/ja active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3429336A (en) * | 1966-12-07 | 1969-02-25 | Ishikawajima Harima Heavy Ind | Apparatus automatically controlling the correlation between time and air pressure |
| DE2122760B2 (de) * | 1970-05-08 | 1973-07-12 | Western Electric Co. Inc., New York, N.Y. (V.StA.) | Verfahren zur herstellung einer duennen halbleitenden schicht durch vakuumaufdampfen |
| US4054151A (en) * | 1974-05-20 | 1977-10-18 | Buchler Instruments, Division Of Searle Diagnostics Inc. | Concentrating vortex shaker |
| US4394871A (en) * | 1980-12-31 | 1983-07-26 | The Boeing Company | Programmable pressure regulator for titanium superplastic forming apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| FR2606426B1 (fr) | 1994-03-25 |
| JPS63219130A (ja) | 1988-09-12 |
| US4739787A (en) | 1988-04-26 |
| DE3738160C2 (enExample) | 1993-01-14 |
| FR2606426A1 (fr) | 1988-05-13 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8110 | Request for examination paragraph 44 | ||
| D2 | Grant after examination | ||
| 8364 | No opposition during term of opposition | ||
| 8327 | Change in the person/name/address of the patent owner |
Owner name: TECHNIMEDICS CORP., CLITHERALL, MINN., US |
|
| 8381 | Inventor (new situation) |
Free format text: STOLTENBERG, KEVIN J., HASTINGS,, MINN. (VERSTORBEN), US |
|
| 8339 | Ceased/non-payment of the annual fee |