DE3703207C2 - - Google Patents
Info
- Publication number
- DE3703207C2 DE3703207C2 DE19873703207 DE3703207A DE3703207C2 DE 3703207 C2 DE3703207 C2 DE 3703207C2 DE 19873703207 DE19873703207 DE 19873703207 DE 3703207 A DE3703207 A DE 3703207A DE 3703207 C2 DE3703207 C2 DE 3703207C2
- Authority
- DE
- Germany
- Prior art keywords
- plasma
- frequency
- discharge
- ion source
- discharge chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000006698 induction Effects 0.000 claims description 11
- 238000000605 extraction Methods 0.000 claims description 10
- 239000002826 coolant Substances 0.000 claims description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- 238000010793 Steam injection (oil industry) Methods 0.000 claims description 2
- 239000000919 ceramic Substances 0.000 claims description 2
- 230000035515 penetration Effects 0.000 claims description 2
- 150000002500 ions Chemical class 0.000 description 18
- 238000000889 atomisation Methods 0.000 description 7
- 239000002184 metal Substances 0.000 description 6
- 238000010884 ion-beam technique Methods 0.000 description 4
- 238000011109 contamination Methods 0.000 description 3
- 239000012212 insulator Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000005405 multipole Effects 0.000 description 2
- 239000012811 non-conductive material Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 229910000939 field's metal Inorganic materials 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 150000001455 metallic ions Chemical class 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 238000005025 nuclear technology Methods 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J27/00—Ion beam tubes
- H01J27/02—Ion sources; Ion guns
- H01J27/16—Ion sources; Ion guns using high-frequency excitation, e.g. microwave excitation
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Combustion & Propulsion (AREA)
- Electron Sources, Ion Sources (AREA)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19873703207 DE3703207A1 (de) | 1987-02-04 | 1987-02-04 | Hochfrequenzionenquelle |
DE19883826432 DE3826432A1 (de) | 1987-02-04 | 1988-08-03 | Hochfrequenzplasma- und ionenquelle fuer einen kontinuierlichen betrieb |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19873703207 DE3703207A1 (de) | 1987-02-04 | 1987-02-04 | Hochfrequenzionenquelle |
Publications (2)
Publication Number | Publication Date |
---|---|
DE3703207A1 DE3703207A1 (de) | 1988-08-18 |
DE3703207C2 true DE3703207C2 (enrdf_load_stackoverflow) | 1989-01-12 |
Family
ID=6320123
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE19873703207 Granted DE3703207A1 (de) | 1987-02-04 | 1987-02-04 | Hochfrequenzionenquelle |
Country Status (1)
Country | Link |
---|---|
DE (1) | DE3703207A1 (enrdf_load_stackoverflow) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3826432A1 (de) * | 1987-02-04 | 1989-01-05 | Lsg Loet Und Schweissgeraete G | Hochfrequenzplasma- und ionenquelle fuer einen kontinuierlichen betrieb |
JPH02215038A (ja) * | 1989-02-15 | 1990-08-28 | Hitachi Ltd | マイクロ波プラズマ極微量元素分析装置 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2147497A5 (enrdf_load_stackoverflow) * | 1971-07-29 | 1973-03-09 | Commissariat Energie Atomique | |
US4507588A (en) * | 1983-02-28 | 1985-03-26 | Board Of Trustees Operating Michigan State University | Ion generating apparatus and method for the use thereof |
-
1987
- 1987-02-04 DE DE19873703207 patent/DE3703207A1/de active Granted
Also Published As
Publication number | Publication date |
---|---|
DE3703207A1 (de) | 1988-08-18 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
OP8 | Request for examination as to paragraph 44 patent law | ||
AG | Has addition no. |
Ref country code: DE Ref document number: 3826432 Format of ref document f/p: P |
|
AG | Has addition no. |
Ref country code: DE Ref document number: 3826432 Format of ref document f/p: P |
|
D2 | Grant after examination | ||
8364 | No opposition during term of opposition | ||
AG | Has addition no. |
Ref country code: DE Ref document number: 3826432 Format of ref document f/p: P |
|
8339 | Ceased/non-payment of the annual fee | ||
8370 | Indication of lapse of patent is to be deleted | ||
8339 | Ceased/non-payment of the annual fee |