DE3703207A1 - Hochfrequenzionenquelle - Google Patents
HochfrequenzionenquelleInfo
- Publication number
- DE3703207A1 DE3703207A1 DE19873703207 DE3703207A DE3703207A1 DE 3703207 A1 DE3703207 A1 DE 3703207A1 DE 19873703207 DE19873703207 DE 19873703207 DE 3703207 A DE3703207 A DE 3703207A DE 3703207 A1 DE3703207 A1 DE 3703207A1
- Authority
- DE
- Germany
- Prior art keywords
- ion source
- frequency
- pot
- discharge
- plasma
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000605 extraction Methods 0.000 claims abstract description 11
- 230000006698 induction Effects 0.000 claims abstract description 9
- 239000002826 coolant Substances 0.000 claims abstract description 5
- 239000000919 ceramic Substances 0.000 claims description 4
- 239000012212 insulator Substances 0.000 claims description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- 239000012811 non-conductive material Substances 0.000 claims description 3
- 238000010793 Steam injection (oil industry) Methods 0.000 claims description 2
- 238000005421 electrostatic potential Methods 0.000 claims 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims 1
- 150000002500 ions Chemical class 0.000 abstract description 18
- 238000010884 ion-beam technique Methods 0.000 abstract description 6
- 239000012535 impurity Substances 0.000 abstract description 4
- 230000000694 effects Effects 0.000 abstract description 3
- 238000004544 sputter deposition Methods 0.000 abstract description 3
- 238000000889 atomisation Methods 0.000 description 5
- 238000011109 contamination Methods 0.000 description 3
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000005405 multipole Effects 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J27/00—Ion beam tubes
- H01J27/02—Ion sources; Ion guns
- H01J27/16—Ion sources; Ion guns using high-frequency excitation, e.g. microwave excitation
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Combustion & Propulsion (AREA)
- Electron Sources, Ion Sources (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19873703207 DE3703207A1 (de) | 1987-02-04 | 1987-02-04 | Hochfrequenzionenquelle |
| DE19883826432 DE3826432A1 (de) | 1987-02-04 | 1988-08-03 | Hochfrequenzplasma- und ionenquelle fuer einen kontinuierlichen betrieb |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19873703207 DE3703207A1 (de) | 1987-02-04 | 1987-02-04 | Hochfrequenzionenquelle |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE3703207A1 true DE3703207A1 (de) | 1988-08-18 |
| DE3703207C2 DE3703207C2 (enrdf_load_stackoverflow) | 1989-01-12 |
Family
ID=6320123
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19873703207 Granted DE3703207A1 (de) | 1987-02-04 | 1987-02-04 | Hochfrequenzionenquelle |
Country Status (1)
| Country | Link |
|---|---|
| DE (1) | DE3703207A1 (enrdf_load_stackoverflow) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3826432A1 (de) * | 1987-02-04 | 1989-01-05 | Lsg Loet Und Schweissgeraete G | Hochfrequenzplasma- und ionenquelle fuer einen kontinuierlichen betrieb |
| US5086255A (en) * | 1989-02-15 | 1992-02-04 | Hitachi, Ltd. | Microwave induced plasma source |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2237252A1 (de) * | 1971-07-29 | 1973-02-01 | Commissariat Energie Atomique | Ionenquelle mit hochfrequenz-hohlraumresonator |
| US4507588A (en) * | 1983-02-28 | 1985-03-26 | Board Of Trustees Operating Michigan State University | Ion generating apparatus and method for the use thereof |
-
1987
- 1987-02-04 DE DE19873703207 patent/DE3703207A1/de active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2237252A1 (de) * | 1971-07-29 | 1973-02-01 | Commissariat Energie Atomique | Ionenquelle mit hochfrequenz-hohlraumresonator |
| US4507588A (en) * | 1983-02-28 | 1985-03-26 | Board Of Trustees Operating Michigan State University | Ion generating apparatus and method for the use thereof |
Non-Patent Citations (5)
| Title |
|---|
| DE-Z: Atomkernenergie, Kerntechnik, Vol.44, Nr. 1, 1984, S. 81-86 * |
| J. Vac. Sci. Technology Bd. 21(3), Sept./Okt. 1982S. 725-736 * |
| JP-Abstract zu JP 61-124029 A2 * |
| Rev. Sci. Instrum Bd. 55, H. 11 Nov. 1984, S. 1760-1762 * |
| US-Z: Rev.Sci.Instr., Vol. 57, Nr. 7, Juli 1986, S. 1254-1260 * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3826432A1 (de) * | 1987-02-04 | 1989-01-05 | Lsg Loet Und Schweissgeraete G | Hochfrequenzplasma- und ionenquelle fuer einen kontinuierlichen betrieb |
| US5086255A (en) * | 1989-02-15 | 1992-02-04 | Hitachi, Ltd. | Microwave induced plasma source |
Also Published As
| Publication number | Publication date |
|---|---|
| DE3703207C2 (enrdf_load_stackoverflow) | 1989-01-12 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP0349555B1 (de) | Hochfrequenz-ionenquelle | |
| EP0003020B1 (de) | Hochfrequenz-Zerstäubungsvorrichtung | |
| EP0315986B1 (de) | Filamentlose Magnetron-Ionenquelle und Verwendungsverfahren | |
| DE69207212T2 (de) | Hochfrequenz-ionenquelle | |
| EP2050120B1 (de) | Ecr-plasmaquelle | |
| DE4319717A1 (de) | Vorrichtung zum Erzeugen planaren Niedrigdruckplasmas unter Verwendung einer Spule mit deren Achse parallel zu der Oberfläche eines Koppelfensters | |
| DE3920835A1 (de) | Einrichtung zum beschichten von substraten | |
| DE2148933A1 (de) | HF-Zerstaeubungsvorrichtung | |
| DE2026321A1 (de) | Kathodenaufstäubungsverfahren und Vorrichtung zur Durchführung des Verfahrens | |
| DE1521321C2 (de) | Apparat zum Zerstäuben von dielektrischen Material | |
| DE68909262T2 (de) | Vorrichtung für RF-Plasma-Verarbeitung. | |
| DE2426880A1 (de) | Vorrichtung zur kathodenzerstaeubung | |
| DE3703207A1 (de) | Hochfrequenzionenquelle | |
| DE2314284A1 (de) | Ionenzerstaeuber-vakuumpumpe | |
| DE4136655A1 (de) | Verfahren und vorrichtung zum reaktiven beschichten eines substrats | |
| DE4301188C2 (de) | Vorrichtung zum Beschichten oder Ätzen von Substraten | |
| DE1934328A1 (de) | Vorrichtung zur wahlweisen Zerstaeubung fester Substanzen durch Ionenbeschuss nach der Plasma- oder Ionenstrahlmethode | |
| DE3826432A1 (de) | Hochfrequenzplasma- und ionenquelle fuer einen kontinuierlichen betrieb | |
| DE2624005A1 (de) | Verfahren zum aufbringen von duennen schichten nach dem ion-plating- verfahren und vorrichtung dazu | |
| US4398896A (en) | Method of de-burring and cleaning electrode systems | |
| DE2838676C2 (enrdf_load_stackoverflow) | ||
| DE1690684A1 (de) | Verfahren und Vorrichtung zum Spruehen mit Hochfrequenz | |
| DD146625A1 (de) | Vorrichtung zum ionengestuetzten beschichten und ionenaetzen von substraten | |
| DE1440665C (de) | Kathodenzerstaubungsvorrichtung zur Herstellung metallischer Schichten | |
| DE1765609C (de) | Hochfrequenz-Sprühvorrichtung |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OP8 | Request for examination as to paragraph 44 patent law | ||
| AG | Has addition no. |
Ref country code: DE Ref document number: 3826432 Format of ref document f/p: P |
|
| AG | Has addition no. |
Ref country code: DE Ref document number: 3826432 Format of ref document f/p: P |
|
| D2 | Grant after examination | ||
| 8364 | No opposition during term of opposition | ||
| AG | Has addition no. |
Ref country code: DE Ref document number: 3826432 Format of ref document f/p: P |
|
| 8339 | Ceased/non-payment of the annual fee | ||
| 8370 | Indication of lapse of patent is to be deleted | ||
| 8339 | Ceased/non-payment of the annual fee |